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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
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2017 |
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68 |
16 |
원문
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Conference
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2016 |
A 16 Watt X-Band GaN High Power Amplifier MMIC for Phased Array Applications
Youn Sub Noh International Conference on Microwave and Millimeter Wave Technology (ICMMT) 2016, pp.1-3 |
7 |
원문
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Conference
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2015 |
X-Band Power Amplifier Using 40W GaN-on-SiC HEMT
Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234 |
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Journal
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2015 |
Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications
Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.25, no.6, pp.406-408 |
23 |
원문
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Journal
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2015 |
X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology
Dong Min Kang Microwave and Optical Technology Letters, v.57, no.1, pp.212-216 |
8 |
원문
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Conference
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2014 |
100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz
Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75 |
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Journal
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2014 |
Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
Hokyun Ahn Solid-State Electronics, v.95, pp.42-45 |
18 |
원문
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Journal
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2009 |
Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method
Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.04C089-1-04C089-5 |
0 |
원문
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Journal
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2008 |
Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713 |
140 |
원문
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
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Journal
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2007 |
Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric
Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3 |
58 |
원문
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Journal
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2005 |
New Method of Driving an OLED with an OTFT
Lim Sang Chul Synthetic Metals, v.151, no.3, pp.197-201 |
18 |
원문
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Journal
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2003 |
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209 |
16 |
원문
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