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Journal
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2024 |
Intense Pulsed Light Annealing for High-k Capacitor Integration in 1T-1C DRAM With a-IGZO Cell Transistors
김희태 IEEE Electron Device Letters, v.45, no.12, pp.2431-2434 |
1 |
원문
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Journal
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2019 |
An Eco-friendly Flexible Piezoelectric Energy Harvester That Delivers High Output Performance is Based on Lead-free MASnI3 Films and MASnI3-PVDF Composite Films
Swathi Ippili Nano Energy, v.57, pp.911-923 |
114 |
원문
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Journal
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2016 |
Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric
Lee Da Jung Materials Research Bulletin, v.83, pp.597-602 |
10 |
원문
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Journal
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2016 |
Photo-patternable High-k ZrOx Dielectrics Prepared using Zirconium Acrylate for Low-voltage-operating Organic Complementary Inverters
정용진 Organic Electronics, v.33, pp.40-47 |
24 |
원문
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Journal
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2016 |
A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor
Shin Hyun Woo Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2632-2636 |
3 |
원문
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Journal
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2015 |
Low Leakage Current AlGaN/GaN on Si-Based Schottky Barrier Diode with Bonding-Pad Electrode Mesa Etching
Hyun-Gyu Jang Japanese Journal of Applied Physics, v.54, no.7, pp.1-5 |
3 |
원문
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Journal
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2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
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Journal
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2012 |
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169 |
1 |
원문
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Journal
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2009 |
Properties of Al₂O₃ Insulating Film Using the ALD Method for Nonvolatile Memory Application
Soon-Won Jung 전기학회논문지, v.58, no.12, pp.2420-2424 |
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Journal
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2009 |
Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
0 |
원문
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Journal
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2009 |
Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
Yong-Young Noh Organic Electronics, v.10, no.1, pp.174-180 |
121 |
원문
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Journal
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2008 |
20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3 |
11 |
원문
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Journal
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2008 |
The improvement of mechanical and dielectric properties of ordered mesoporous silica film using TEOS–MTES mixed silica precursor
하태정 Ceramics International, v.34, no.4, pp.947-951 |
25 |
원문
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Journal
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2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 |
4 |
원문
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Journal
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2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
원문
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Journal
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2003 |
엑시머 레이저 에 의해 형성된 TFT 특성
Kim Yong Hae Thin Solid Films, v.440, no.1-2, pp.169-173 |
12 |
원문
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