|
Journal
|
2025 |
Swing-Tunable Oxide Thin-Film Transistors via Electrohydrodynamic Jet-Printed Parasitic Conduction Path
Na Jae Won ACS Applied Materials and Interfaces, v.17, no.49, pp.66876-66888 |
0 |
원문
|
|
Journal
|
2025 |
Swing-Tunable Oxide Thin-Film Transistors via Electrohydrodynamic Jet-Printed Parasitic Conduction Path
황용선 ACS Applied Materials and Interfaces, v.17, no.49, pp.66876-66888 |
0 |
원문
|
|
Journal
|
2025 |
Mitigating hydrogen-related instabilities in oxide thin-film transistor via nitrogen-engineered passivation layer for thermal stability
Na Jae Won Applied Surface Science Advances, v.29, pp.1-11 |
1 |
원문
|
|
Journal
|
2025 |
Mitigating hydrogen-related instabilities in oxide thin-film transistor via nitrogen-engineered passivation layer for thermal stability
이이삭 Applied Surface Science Advances, v.29, pp.1-11 |
1 |
원문
|
|
Journal
|
2025 |
Investigation of Chlorine-Induced Damage in Oxide Semiconductor Transistors
Na Jae Won ACS Applied Electronic Materials, v.7, no.13, pp.6128-6136 |
0 |
원문
|
|
Journal
|
2025 |
Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT
김희태 IEEE Transactions on Electron Devices, v.72, no.5, pp.2399-2405 |
2 |
원문
|
|
Journal
|
2024 |
Rapid activation of a solution-processed aluminum oxide gate dielectric through intense pulsed light irradiation
오연화 RSC Advances, v.14, no.50, pp.37438-37444 |
2 |
원문
|
|
Journal
|
2021 |
Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications
권혁진 Advanced Functional Materials, v.31, no.10, pp.1-15 |
38 |
원문
|
|
Journal
|
2021 |
Printable Ultra‐Flexible Fluorinated Organic–Inorganic Nanohybrid Sol–Gel Derived Gate Dielectrics for Highly Stable Organic Thin‐Film Transistors and Other Practical Applications
Heqing Ye Advanced Functional Materials, v.31, no.10, pp.1-15 |
38 |
원문
|
|
Journal
|
2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 |
18 |
원문
|
|
Conference
|
2015 |
Fabrication of Indium Gallium Zinc Oxide-based Stretchable Organic Ferroelectric Memory Transistors with Polyimide Stiff Regions on Elastomer Substrate
Soon-Won Jung International Nanotech Symposium and Nano-Convergence Expo (NANO KOREA) 2015, pp.1-1 |
|
|
|
Journal
|
2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133 |
21 |
원문
|
|
Journal
|
2012 |
Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors
Cheong Woo-Seok ETRI Journal, v.34, no.6, pp.966-969 |
8 |
원문
|
|
Journal
|
2012 |
Fabrication of Amorphous InGaZnO Thin-Film Transistor-Driven Flexible Thermal and Pressure Sensors
박익준 Semiconductor Science and Technology, v.27, no.10, pp.1-6 |
26 |
원문
|
|
Journal
|
2011 |
Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
허준영 Thin Solid Films, v.519, no.20, pp.6868-6871 |
38 |
원문
|
|
Journal
|
2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4 |
7 |
원문
|
|
Journal
|
2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94, no.22, pp.1-4 |
111 |
원문
|
|
Journal
|
2009 |
Comparative Study of the Low-Frequency-Noise Behaviors in a-IGZO Thin-Film Transistors With Al2O3 and Al2O3/SiNx Gate Dielectrics
조인탁 IEEE Electron Device Letters, v.30, no.8, pp.828-830 |
46 |
원문
|
|
Journal
|
2009 |
Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors
이정민 IEEE Electron Device Letters, v.30, no.5, pp.505-507 |
64 |
원문
|
|
Journal
|
2009 |
Process development of ITO source/drain electrode for the top-gate indium–gallium–zinc oxide transparent thin-film transistor
Cheong Woo-Seok Thin Solid Films, v.517, no.14, pp.4094-4099 |
23 |
원문
|