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Journal
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2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
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Journal
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2020 |
W‐Band MMIC chipset in 0.1‐μm mHEMT technology
Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561 |
6 |
원문
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Journal
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2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
2 |
원문
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Journal
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2015 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130 |
2 |
원문
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Conference
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2014 |
Detecting Cloned Devices in Wireless Network using RSSI and RF Features
Kwon Hyeok Chan International Conference on Internet (ICONI) 2014, pp.1-4 |
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Conference
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2014 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Recessed Gate by ICP Etching of BCl3/SF6
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.81-81 |
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
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Conference
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2007 |
Development of Ka band Multi-beam Antenna
Jang-Sup Choi Ka and Broadband Communications Conference 2007, pp.1-7 |
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Conference
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2006 |
Analysis of Crosstalk and Impedance Matching for 60 GHz Band Electro-Absorption Duplexer (EAD) Module
Choi Kwang-Seong International Topical Meeting on Microwave Photonics (MWP) 2006, pp.1-4 |
1 |
원문
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Journal
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2006 |
Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206 |
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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Journal
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2006 |
Development and RF Characteristics of Analog 60-GHz Electroabsorption Modulator Module for RF/Optic Conversion
Kim Je Ha IEEE Transactions on Microwave Theory and Techniques, v.54, no.2, pp.780-786 |
37 |
원문
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Conference
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2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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Conference
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2005 |
Dependence of DC, and RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won International Conference on Advanced Materials and Devices (ICAMD) 2006, pp.1-7 |
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Conference
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2005 |
A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness
Kim Yong Won Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
0 |
원문
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Journal
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2003 |
Analysis and characterization of traveling-wave electrode in electroabsorption modulator for radio-on-fiber application
Ji Youn Lim IEEE/OSA Journal of Lightwave Technology, v.21, no.12, pp.3004-3010 |
33 |
원문
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