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Conference
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2024 |
0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band
Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 |
0 |
원문
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Journal
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2024 |
β-Ga2O3 Schottky Barrier Diodes with Near-Zero Turn-on Voltage and Breakdown Voltage over 3.6 kV
Kyu Jun Cho Transactions on Electrical and Electronic Materials, v.25, no.3, pp.1-5 |
4 |
원문
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Journal
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2019 |
2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 |
124 |
원문
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Journal
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2019 |
DC Characteristics of AlGaN/GaN High-Electron Mobility Transistor with a Bottom Plate Connected to Source-Bridged Field Plate Structure
곽현탁 Journal of Nanoscience and Nanotechnology, v.19, no.4, pp.2319-2322 |
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원문
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Journal
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2018 |
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
곽현탁 Applied Sciences, v.8, no.6, pp.1-14 |
30 |
원문
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Journal
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2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686 |
3 |
원문
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Conference
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2015 |
Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs
Woojin Chang International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
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Conference
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2015 |
Effects on Breakdown Voltages of GaN FETs for Field Plate Structures
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.326-329 |
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Conference
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2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
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Conference
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2013 |
Effects of Various Field Plates for Normally-Off GaN MISFETs
Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333 |
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Conference
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2013 |
Device Characteristics of Normally-Off GaN MISFET Including Field Plates
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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Journal
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2012 |
Simulation and Fabrication Studies of Semi-SuperJunction Trench Power MOSFETs by RSO Process with Silicon Nitride Layer
Na Kyoung Il ETRI Journal, v.34, no.6, pp.962-965 |
17 |
원문
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Conference
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2011 |
A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
임지용 International Symposium on Power Semiconductor Devices (ISPSD) 2011, pp.247-250 |
7 |
원문
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