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Journal
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2023 |
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
조홍래 ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349 |
7 |
원문
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Journal
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2022 |
Improvement in nonvolatile memory operations for metal-ferroelectric-insulator-semiconductor capacitors using HfZrO2 and ZrO2 thin films as ferroelectric and insulator layers
Yeriaron Kim Journal of Physics D : Applied Physics, v.55, no.33, pp.1-9 |
1 |
원문
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Journal
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2019 |
Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses
나소영 Japanese Journal of Applied Physics, v.58, no.7, pp.1-5 |
11 |
원문
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Journal
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2018 |
Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface
Kim Tae Yoon ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412 |
14 |
원문
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Journal
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2018 |
High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer
임재갑 Solid-State Electronics, v.140, pp.134-138 |
13 |
원문
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Journal
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2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 |
18 |
원문
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Journal
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2013 |
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737 |
18 |
원문
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Journal
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2013 |
Controlled Charge Trapping by Molybdenum Disulphide and Graphene in Ultrathin Heterostructured Memory Devices
최민섭 Nature Communications, v.4, pp.1-7 |
602 |
원문
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Journal
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519, no.18, pp.6174-6177 |
0 |
원문
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Journal
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2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 |
2 |
원문
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Journal
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2010 |
Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)
Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752 |
18 |
원문
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Journal
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2010 |
Nonvolatile Memory Organic Field Effect Transistor Induced by the Steric Hindrance Effects of Organic Molecules
Jung Mi Hee Journal of Materials Chemistry, v.20, no.37, pp.8016-8020 |
25 |
원문
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Journal
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2010 |
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778 |
3 |
원문
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Journal
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2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
108 |
원문
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Journal
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2010 |
Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 |
31 |
원문
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Journal
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2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 |
32 |
원문
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Journal
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2009 |
Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328 |
12 |
원문
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Journal
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2009 |
Charge Transfer and Trapping Properties in Polymer Gate Dielectrics for Non-Volatile Organic Field-Effect Transistor Memory Applications
백강준 Solid-State Electronics, v.53, no.11, pp.1165-1168 |
23 |
원문
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Journal
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2008 |
Polarity Effects of Polymer Gate Electrets on Non‐Volatile Organic Field‐Effect Transistor Memory
Back Gangjoon Advanced Functional Materials, v.18, no.22, pp.3678-3685 |
264 |
원문
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