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Journal
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2023 |
Balanced GaN HPA MMIC for 5G FR2 Band Base Station
Ji Hong Gu 한국전자파학회 논문지, v.34, no.6, pp.444-449 |
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원문
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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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원문
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Conference
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2020 |
Development and localization status of GaN-on-SiC epi material for RF Power Amplifier
Bae Sung-Bum 한국전자파학회 종합 학술 대회 (하계) 2020, pp.185-185 |
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Journal
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2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
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원문
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Conference
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2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Kim Zin-Sig 대한전자공학회 학술 대회 (하계) 2018, pp.195-198 |
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Journal
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2017 |
A Decade-Bandwidth Distributed Power Amplifier MMIC Using 0.25 μm GaN HEMT Technology
Shin Dong Hwan Journal of Electromagnetic Engineering and Science, v.17, no.4, pp.178-180 |
5 |
원문
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Conference
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2017 |
Backside Via Process with Defect Free Sidewalls for GaN MMIC Applications
Kyu Jun Cho International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2017, pp.1-3 |
0 |
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Journal
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2016 |
Fully-Integrated Two-Stage GaN MMIC Doherty Power Amplifier for LTE Small Cells
Kim Cheol Ho IEEE Microwave and Wireless Components Letters, v.26, no.11, pp.918-920 |
36 |
원문
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Conference
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2016 |
GaN-on-SiC Power Electronic Device using In-Situ SiN
Park Young Rak 대한전자공학회 종합 학술 대회 (하계) 2016, pp.371-372 |
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Conference
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2016 |
50W 출력 전력 특성을 갖는 0.25um GaN-on-SiC HEMT
Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2016, pp.325-328 |
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Conference
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2016 |
A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
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Journal
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2016 |
0.25 μm AlGaN/GaN HEMT Devices and 9 GHz Power Amplifier
Dong Min Kang 한국전자파학회논문지, v.27, no.1, pp.76-79 |
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원문
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Conference
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2015 |
X-Band Power Amplifier Using 40W GaN-on-SiC HEMT
Dong Min Kang 대한전자공학회 종합 학술 대회 (하계) 2015, pp.231-234 |
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Journal
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2015 |
X‐band 100 W solid‐state power amplifier using a 0.25 μM GaN HEMT technology
Dong Min Kang Microwave and Optical Technology Letters, v.57, no.1, pp.212-216 |
6 |
원문
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Conference
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2014 |
100W Pulsed SSPA Using 25W AlGaN/GaN HEMT Technology at 9.2 - 9.5 GHz
Dong Min Kang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.75-75 |
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Conference
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2014 |
Failure Analysis of Backside Via-Hole Process at GaN on SiC HEMT
Min Byoung-Gue 대한전자공학회 종합 학술 대회 (하계) 2014, pp.1973-1974 |
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Journal
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2014 |
A 2.14-GHz GaN MMIC Doherty Power Amplifier for Small-Cell Base Stations
Kim Cheol Ho IEEE Microwave and Wireless Components Letters, v.24, no.4, pp.263-265 |
45 |
원문
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Conference
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2012 |
Current Status of GaN Technologies in ETRI
Mun Jae Kyoung Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD) 2012, pp.1-2 |
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