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Journal
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2025 |
Demonstration of GaN-Based HEMTs Using Extremely Thin h-BN Passivation Layer and Air Spacer for the RF Performance Improvement
Sungjae Chang Advanced Electronic Materials, v.11, no.20, pp.1-10 |
0 |
원문
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Journal
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2025 |
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Park Honghwi Laser and Photonics Reviews, v.19, no.19, pp.1-9 |
2 |
원문
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Journal
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2025 |
Growth Behaviors of InAs/GaAs Quantum Dots Using Metal−Organic Chemical Vapor Deposition with Dual-Channel AsH3 Supply and H2 Carrier Gas Flow Rate Variation
김호성 Crystal Growth and Design, v.25, no.16, pp.6628-6635 |
0 |
원문
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Journal
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2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 |
22 |
원문
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Journal
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2018 |
Photo-Conductive Detection of Continuous THz Waves Via Manipulated Ultrafast Process in Nanostructures
Kiwon Moon Applied Physics Letters, v.112, no.3, pp.1-5 |
8 |
원문
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Journal
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2013 |
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
Bae Sung-Bum ETRI Journal, v.35, no.4, pp.566-570 |
6 |
원문
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Journal
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2006 |
All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications
Miran Park IEEE Photonics Technology Letters, v.18, no.16, pp.1717-1719 |
67 |
원문
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Journal
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2006 |
All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
Miran Park Japanese Journal of Applied Physics, v.45, no.1, pp.L8-L10 |
31 |
원문
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Journal
|
2005 |
Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers
한성주 IEEE Transactions on Device and Materials Reliability, v.5, no.2, pp.262-267 |
6 |
원문
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Journal
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2004 |
1.55 [micro sign]m bottom-emitting InAlGaAs VCSELs with Al2O3∕a-Si thin-film pairs as top mirror
Song Hyun Woo Electronics Letters, v.40, no.14, pp.868-869 |
4 |
원문
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Journal
|
2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
원문
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Journal
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2003 |
High power 0.25 [micro sign]m gate GaN HEMTs on sapphire with power density 4.2 W∕mm at 10 GHz
Youn Doo Hyeb Electronics Letters, v.39, no.6, pp.566-567 |
15 |
원문
|
|
Journal
|
2002 |
CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
Jaeheon Shin IEEE Photonics Technology Letters, v.14, no.8, pp.1031-1033 |
51 |
원문
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|
Journal
|
2000 |
Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs
Kwon O-Kyun IEEE Photonics Technology Letters, v.12, no.9, pp.1132-1134 |
8 |
원문
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