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Conference
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2023 |
Threshold Voltage Shift Mechanisms Induced by γ-ray and Proton Irradiation in GaN-based MIS-HEMTS for Satellite Communication System
Sungjae Chang 한국통신학회 종합 학술 발표회 (하계) 2023, pp.1-3 |
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Journal
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13 |
1 |
원문
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Conference
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2021 |
Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs
Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96 |
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Journal
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2020 |
Few-layer PdSe2-based Field-effect Transistor for Photodetector Applications
A.Venkatesan Materials Science in Semiconductor Processing, v.115, pp.1-7 |
9 |
원문
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Journal
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2017 |
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
강민식 Nanoscale, v.9, no.4, pp.1645-1652 |
44 |
원문
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Journal
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2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET
Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684 |
5 |
원문
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Journal
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2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 |
5 |
원문
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Conference
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2016 |
Threshold Voltage Shift of 0.2 μm AlGaN/GaN MISHFET with Fluorinated Gate Dielectric
Hokyun Ahn International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2013 |
Analysis of Forward Characteristics in AlGan/GaN SBD with Schottky Contact Lying on Mesa Edge
Park Young Rak International Conference on Solid State Devices and Materials (SSDM) 2013, pp.144-145 |
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원문
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Journal
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2012 |
Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation
Oh Himchan ETRI Journal, v.34, no.2, pp.280-283 |
16 |
원문
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Journal
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2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4 |
7 |
원문
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Journal
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2011 |
Transition of Dominant Instability Mechanism Depending on Negative Gate Bias under Illumination in Amorphous In-Ga-Zn-O Thin Film Transistor
Oh Himchan Applied Physics Letters, v.98, no.3, pp.1-3 |
98 |
원문
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Journal
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2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143 |
17 |
원문
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Journal
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2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94, no.22, pp.1-4 |
109 |
원문
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Journal
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2007 |
Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics
Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25 |
0 |
원문
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Journal
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2007 |
Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric
Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3 |
58 |
원문
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