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Journal
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2023 |
Ferroelectric Hafnia-Based M3D FeTFTs Annealed at Extremely Low Temperatures and TCAM Cells for Computing-in-Memory Applications
조홍래 ACS Applied Materials & Interfaces, v.15, no.44, pp.51339-51349 |
7 |
원문
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Journal
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2023 |
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator
Sungjae Chang Nanomaterials, v.13, no.5, pp.1-13 |
1 |
원문
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Conference
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2021 |
Study of Threshold Voltage Shift Mechanism Corresponding to the Proton Radiation Energy in GaN-based MIS-HEMTs
Sungjae Chang 대한전자공학회 학술 대회 (하계) 2021, pp.93-96 |
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Journal
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2020 |
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer
Sungjae Chang Nanomaterials, v.10, no.11, pp.1-11 |
11 |
원문
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
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2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9, no.17, pp.1-13 |
6 |
원문
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Journal
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2019 |
Characterization of Metal-ferroelectric-metal-insulator-semiconductor Structures using Ferroelectric Al-doped HfO2 Thin Films Prepared by Atomic-layer Deposition with Different O3 Doses
나소영 Japanese Journal of Applied Physics, v.58, no.7, pp.1-5 |
11 |
원문
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Journal
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Journal
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2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 |
19 |
원문
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Journal
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2018 |
Enhanced Carrier Transport Properties in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with SiN/Al2O3 Bi-Layer Passivation
Sungjae Chang ECS Journal of Solid State Science and Technology, v.7, no.6, pp.86-90 |
8 |
원문
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Journal
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2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET
Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684 |
5 |
원문
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Journal
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
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Journal
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2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29, no.7, pp.1-6 |
29 |
원문
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Journal
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2012 |
Important Role of Polymorphs of Organic Semiconductors on the Reduction of Current Leakage in an Organic Capacitor
배진혁 Molecular Crystals and Liquid Crystals, v.567, no.1, pp.57-6286 |
1 |
원문
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Journal
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2012 |
Subthreshold Characteristics of Pentacene Field-Effect Transistors Influenced by Grain Boundaries
Park Jae Hoon Journal of Applied Physics, v.111, no.10, pp.1-6 |
12 |
원문
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Journal
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2009 |
Properties of Al₂O₃ Insulating Film Using the ALD Method for Nonvolatile Memory Application
Soon-Won Jung 전기학회논문지, v.58, no.12, pp.2420-2424 |
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Journal
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2006 |
High Negative Differential Resistance in Silicon Quantum Dot Metal-Insulator-Semiconductor Structure
Rae-Man Park Applied Physics Letters, v.89, no.15, pp.1-3 |
14 |
원문
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Journal
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2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137 |
8 |
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