Journal
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2025 |
Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT
김희태 IEEE Transactions on Electron Devices, v.72, no.5, pp.2399-2405 |
0 |
원문
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Journal
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2018 |
Investigation of the Evolution of Nitrogen Defects in Flash-Lamp-Annealed InGaZnO Films and Their Effects on Transistor Characteristics
엄태일 Applied Physics Express, v.11, no.6, pp.1-4 |
12 |
원문
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Journal
|
2012 |
Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors
박준용 ACS Applied Materials & Interfaces, v.4, no.10, pp.5369-5374 |
27 |
원문
|
Journal
|
2012 |
Fabrication of Amorphous InGaZnO Thin-Film Transistor-Driven Flexible Thermal and Pressure Sensors
박익준 Semiconductor Science and Technology, v.27, no.10, pp.1-6 |
25 |
원문
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Journal
|
2012 |
Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors
박준용 Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5 |
20 |
원문
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Conference
|
2011 |
Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors
Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116 |
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Journal
|
2011 |
Effects of the Composition of Sputtering Target on the Stability of InGaZnO Thin Film Transistor
허준영 Thin Solid Films, v.519, no.20, pp.6868-6871 |
38 |
원문
|
Journal
|
2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4 |
7 |
원문
|
Journal
|
2011 |
Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array
Kim Byeonghoon IEEE Electron Device Letters, v.32, no.3, pp.324-326 |
29 |
원문
|
Journal
|
2011 |
n-Ga-Zn-oxide Thin-film Transistors with Sb2TeOx Gate Insulators Fabricated by Reactive Sputtering Using a Metallic Sb2Te Target
Cheong Woo-Seok Journal of the Korean Physical Society, v.58, no.3, pp.608-611 |
3 |
원문
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Conference
|
2009 |
The Effects of Metal Electrodes on the Electrical Properties of Flexible IGZO Thin Film Transistors
Cheong Woo-Seok International Workshop on Flexible and Printable Electronics (IWFPE) 2009, pp.1-1 |
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Journal
|
2009 |
Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors
이정민 IEEE Electron Device Letters, v.30, no.5, pp.505-507 |
61 |
원문
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Conference
|
2009 |
Stability of Nano-Crystalline ZnO and Amorphous IGZO TFTs under Bias Stress
Yang Shinhyuk Society for Information Display (SID) International Symposium 2009, pp.1121-1123 |
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Journal
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534 |
43 |
원문
|
Conference
|
2009 |
P‐8: Effects of Active Thickness in Oxide Semiconductor TFTs
Hwang Chi-Sun Society for Information Display (SID) International Symposium 2009, pp.1107-1109 |
10 |
원문
|
Conference
|
2008 |
P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors
Cho Doo-Hee Society for Information Display (SID) International Symposium 2008, pp.1243-1246 |
6 |
원문
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