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Conference
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2024 |
Enhancing Ohmic Contacts in GaN HEMT through Optimization of Ramp-up Rate in Annealing Process
Junhyung Kim International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1104-1105 |
0 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
도재원 Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Journal
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2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Jung Hyunwook Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
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Conference
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2020 |
Ohmic Contacts with Recess-etched and TMAH-treated Nanometer-scale Patterns for Improved Performance and Reliability in AlGaN/GaN HEMTs
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2020, pp.790-790 |
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Journal
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2017 |
High Temperature Storage Test and Its Effect on the Thermal Stability and Electrical Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Current Applied Physics, v.17, no.2, pp.157-161 |
15 |
원문
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Conference
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2016 |
Double-Channel Oxide Semiconductor Vertical TFTs with Mo Source/Drain Layer
Hwang Chi-Sun International Display Workshops in conjunction with Asia Display (IDW/AD) 2016, pp.274-276 |
0 |
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Conference
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2016 |
Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact
Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
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Journal
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2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
3 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Conference
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2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
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Conference
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2014 |
Formation of Ohmic Contact to AlGaN/GaN Heterostructure on Sapphire
Kim Zin Sig 한국진공학회 정기 학술 대회 (동계) 2014, pp.292-292 |
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Conference
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2011 |
A new vertical GaN SBD employing in-situ metallic gallium ohmic contact
임지용 International Symposium on Power Semiconductor Devices (ISPSD) 2011, pp.247-250 |
7 |
원문
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Journal
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2007 |
Electrical and microstructural properties of low‐resistance Ti/Re/Au ohmic contacts to n‐type GaN
V. Rajagopal Reddy Physica Status Solidi (A), v.204, no.10, pp.3392-3397 |
0 |
원문
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Journal
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2007 |
Undoped Homojunction Chalcogen Thin-film Transistors on Glass
Song Kibong Applied Physics Letters, v.90, no.26, pp.1-3 |
9 |
원문
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Journal
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2003 |
Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor
Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258 |
8 |
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Journal
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2002 |
Microstructure and Electrical Properties of Low Temperature Processed Ohmic Contacts to p-Type GaN
Miran Park ETRI Journal, v.24, no.5, pp.349-359 |
11 |
원문
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