ETRI-Knowledge Sharing Plaform

High Electron Mobility Transistor(HEMT) Algan/Gan Hemts Gan-Based Sic Substrate Device Performance Field Plate Electrical Properties(I-V curve) Components Technology Proton Radiation Via-Hole Surface Treatments Mechanical Stress Breakdown Voltage(BDV) Carrier Mobility Radiation Hardness Compound Semiconductor 30 Ghz Sapphire Substrates Next-Generation Threshold Voltage(Vth) Fabrication Process Inductively-Coupled Plasma(ICP) Cut-Off Frequency Bi-Layer Gate Length Maximum Oscillation Frequency Gate Recess 3 V Dielectric Layer Minimum Noise Figure Oxygen Plasma Treatment Algan/Gan Mis-Hemt Transfer Characteristics Two-Step High Performance Boron Nitride(BN) Diode Ideality Factor Etch Depth Metal Contact Noise Level Recessed Gate Release Layer 10 Ghz 5 Nm T-Shaped Gate Dc Characteristics Gan Hemt Devices Passivation Layer And Gate Transconductance (Gm) Multi-Purpose Compressive Stress Etching Conditions Channel Layer Transfer Technique Device Properties Mim Capacitor Performance Degradation Rf Performance Schottky Diode Atomic Force Microscope(AFM) Sheet Resistance Access Region Tensile Stress Gate Resistance Hetero-Interface Sic Device Wet Chemical Etching Contact Region Enhancement-Mode Gas Mixture Low Noise Dry Etching Transmission Electron Microscopy(TEM) I-V Characteristic(Transport property) Transport Characteristics Trend Of Increasing Critical Defects Coulomb Scattering Contact Resistance(73.40.Cg) Etch Selectivity Gan Films Molecular Beam Epitaxy(MBE) Mobility Extraction Method Mobility Behavior O 3 Stress Measurement Atomic Layer Deposition Accurate Model X-Ray Photoelectron Spectroscopy (Xps) Channel Thickness Channel Mobility Carrier Transport Capping Layer Creative Technology Dislocation Density Depletion Mode Electrical Characterization Etch Profile Gaas Mhemt Gate Bias Stress Gan Epilayer Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) On-Resistance Power Switching Plasma-Enhanced Chemical Vapor Deposition(PECVD) Property Improvement Rf Characteristics Saturation Current Atomic Force Microscopy (Afm) Tetramethylammonium Hydroxide Trapped Charge Cleaning Process Edge-Type Fe-Doped Gate Leakage Current Gan Nanowire Metal Deposition Measurement Data Process Technique Power Semiconductor Quality Improvement Recent Progress Rf Properties Subthreshold Slope(SS) Active Region Carrier Transfer Carrier Concentration Gan Power Amplifier High-Voltage And High-Power Interface Quality Metal-Insulator-Semiconductor(MIS) Pulsed Mode Surface Treatment Method Semi-Insulating Single-Layer Saturation Drain Current Sensor Device Device Characteristics F Max Gan Capping Gas Sensors Key Device Ka-Band Material Properties Native Oxide Layer Normally-Off Oxide-Semiconductor Field-Effect Transistors Sin Passivation Si-Doped Systematic Study X-Ray Diffraction Wideband Operation Degradation Factor Capacitance-Voltage Comparative Study Digital Etch Diamond Heat Spreader Epitaxial Layer Gan-On-Sic Hemt Iii-Nitrides Off-State Breakdown Power Amplifiers(PAs) Plasma Damage Algan/Gan Heterostructure Via Etch Temperature Dependence Thermal Conductivity Cu Film Electrical Characteristics Gate Insulator Insulating Layer Laser Lift-Off Linear Trend Nitride Layer Off Current Power Amplifier Mmic Silicon Nitride Switching Device Stress Effects Stress Conditions Stress Engineering Aln Substrate Various Substrates Current-Voltage Characteristics CF 4 Defect-Free Front-Side High Power Density Substrate Effects Self-Heating Effect(SHE)