ETRI-Knowledge Sharing Plaform

High Electron Mobility Transistor(HEMT) Algan/Gan Hemts Gan-Based Sic Substrate Device Performance Field Plate Components Technology Electrical Properties(I-V curve) Proton Radiation Via-Hole Radiation Hardness Mechanical Stress Breakdown Voltage(BDV) Carrier Mobility Surface Treatments Compound Semiconductor 30 Ghz Sapphire Substrates Next-Generation Inductively-Coupled Plasma(ICP) Fabrication Process Threshold Voltage(Vth) Cut-Off Frequency Bi-Layer Gate Length Maximum Oscillation Frequency Gate Recess 3 V Dielectric Layer Minimum Noise Figure Dry Etching Oxygen Plasma Treatment High Performance Algan/Gan Mis-Hemt Boron Nitride(BN) Diode Ideality Factor Etch Depth Two-Step Metal Contact Noise Level Recessed Gate Release Layer Transfer Characteristics Gan Hemt Devices 5 Nm Dc Characteristics 10 Ghz Passivation Layer T-Shaped Gate And Gate Compressive Stress Etching Conditions Multi-Purpose Transconductance (Gm) Channel Layer Device Properties Mim Capacitor Transfer Technique Performance Degradation Rf Performance Schottky Diode Atomic Force Microscope(AFM) Sheet Resistance Gate Resistance Hetero-Interface Access Region Sic Device Tensile Stress Gas Mixture Wet Chemical Etching Enhancement-Mode Low Noise Contact Region Gan Films Coulomb Scattering Contact Resistance(73.40.Cg) Critical Defects Etch Selectivity Molecular Beam Epitaxy(MBE) Mobility Extraction Method Mobility Behavior O 3 Stress Measurement Trend Of Increasing Transmission Electron Microscopy(TEM) I-V Characteristic(Transport property) Transport Characteristics Gaas Mhemt Gate Bias Stress Gan Epilayer X-Ray Photoelectron Spectroscopy (Xps) Atomic Layer Deposition Accurate Model Channel Thickness Channel Mobility Carrier Transport Capping Layer Creative Technology Etch Profile Dislocation Density Depletion Mode Electrical Characterization Plasma-Enhanced Chemical Vapor Deposition(PECVD) Metal-Oxide-Semiconductor Field-Effect Transistor(MOSFET) On-Resistance Property Improvement Power Switching Rf Characteristics Saturation Current Gan Nanowire Gate Leakage Current Atomic Force Microscopy (Afm) Cleaning Process Edge-Type Fe-Doped Measurement Data Metal Deposition Process Technique Power Semiconductor Quality Improvement Rf Properties Recent Progress Subthreshold Slope(SS) Trapped Charge Tetramethylammonium Hydroxide Gan Power Amplifier High-Voltage And High-Power Interface Quality Active Region Carrier Transfer Carrier Concentration Metal-Insulator-Semiconductor(MIS) Pulsed Mode Surface Treatment Method Semi-Insulating Single-Layer Saturation Drain Current Sensor Device Gas Sensors Gan Capping Key Device Ka-Band Device Characteristics F Max Si-Doped Material Properties Native Oxide Layer Normally-Off Oxide-Semiconductor Field-Effect Transistors Systematic Study Sin Passivation Gan-On-Sic Hemt Iii-Nitrides X-Ray Diffraction Wideband Operation Capacitance-Voltage Comparative Study Degradation Factor Digital Etch Diamond Heat Spreader Epitaxial Layer Off-State Breakdown Plasma Damage Power Amplifiers(PAs) Gate Insulator Cu Film Insulating Layer Algan/Gan Heterostructure Electrical Characteristics Laser Lift-Off Linear Trend Nitride Layer Off Current Power Amplifier Mmic Silicon Nitride Switching Device Stress Effects Stress Conditions Stress Engineering Temperature Dependence Thermal Conductivity Via Etch High Power Density Aln Substrate Current-Voltage Characteristics CF 4 Defect-Free Front-Side Substrate Effects Self-Heating Effect(SHE) Various Substrates