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Journal
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2025 |
High Performance 1.3 µm III–V Quantum Dot Lasers Grown on Silicon via all MOCVD Epitaxy
Park Honghwi Laser and Photonics Reviews, v.19, no.19, pp.1-9 |
1 |
원문
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Journal
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2024 |
High-temperature and continuous wave-operation of all-MOCVD grown InAs/GaAs quantum dot laser diodes with highly strained layer and low temperature p-AlGaAs cladding layer
Ho Sung Kim Journal of Alloys and Compounds, v.983, pp.1-10 |
3 |
원문
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Journal
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2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 |
22 |
원문
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Journal
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2021 |
GaAs on Si substrate with dislocation filter layers for wafer‐scale integration
Ho Sung Kim ETRI Journal, v.43, no.5, pp.909-915 |
3 |
원문
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Journal
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2021 |
Monolithic Growth of GaAs Laser Diodes on Si(001) by Optimal AlAs Nucleation with Thermal Cycle Annealing
Young-Ho Ko Optical Materials Express, v.11, no.3, pp.943-951 |
9 |
원문
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Journal
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2020 |
High quality GaAs epitaxially grown on Si(001) substrate through AlAs nucleation and thermal cycle annealing
Young-Ho Ko Solid-State Electronics, v.166, pp.1-5 |
5 |
원문
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Journal
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2018 |
Photo-Conductive Detection of Continuous THz Waves Via Manipulated Ultrafast Process in Nanostructures
Kiwon Moon Applied Physics Letters, v.112, no.3, pp.1-5 |
8 |
원문
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Journal
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2013 |
Low-Temperature-Grown InGaAs Terahertz Photomixer Embedded in InP Thermal Spreading Layer Regrown by Metalorganic Chemical Vapor Deposition
Moon Kiwon Optics Letters, v.38, no.24, pp.5466-5469 |
12 |
원문
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Journal
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2013 |
380-nm Ultraviolet Light-Emitting Diodes with InGaN/AlGaN MQW Structure
Bae Sung-Bum ETRI Journal, v.35, no.4, pp.566-570 |
6 |
원문
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Journal
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2006 |
All-epitaxial InAlGaAs-InP VCSELs in the 1.3-1.6-/spl mu/m wavelength range for CWDM band applications
Miran Park IEEE Photonics Technology Letters, v.18, no.16, pp.1717-1719 |
67 |
원문
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Journal
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2006 |
All-Monolithic 1.55 µm InAlGaAs/InP Vertical Cavity Surface Emitting Lasers Grown by Metal Organic Chemical Vapor Deposition
Miran Park Japanese Journal of Applied Physics, v.45, no.1, pp.L8-L10 |
31 |
원문
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Journal
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2005 |
Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers
한성주 IEEE Transactions on Device and Materials Reliability, v.5, no.2, pp.262-267 |
6 |
원문
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|
Journal
|
2004 |
The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs
Youn Doo Hyeb IEEE Transactions on Electron Devices, v.51, no.5, pp.785-789 |
15 |
원문
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Journal
|
2000 |
Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs
Kwon O-Kyun IEEE Photonics Technology Letters, v.12, no.9, pp.1132-1134 |
8 |
원문
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