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Journal
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2019 |
Frequency Response Estimation of 1.3 μm Waveguide Integrated Vertical PIN Type Ge-on-Si Photodetector Based on the Analysis of Fringing Field in Intrinsic Region
서동준 Current Optics and Photonics, v.3, no.6, pp.510-515 |
4 |
원문
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Journal
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2019 |
High-performance Fab-compatible Processed Near-infrared Organic Thin-film Photodiode with 3.3×1012 Jones Detectivity and 80% External Quantum Efficiency
김주희 Organic Electronics, v.70, pp.101-106 |
18 |
원문
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Journal
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2019 |
High-performance Fab-compatible Processed Near-infrared Organic Thin-film Photodiode with 3.3×1012 Jones Detectivity and 80% External Quantum Efficiency
Joo Chul Woong Organic Electronics, v.70, pp.101-106 |
18 |
원문
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Journal
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2012 |
Radiation damage of multipixel Geiger-mode avalanche photodiodes irradiated with low-energy γ’s and electrons
권영일 Journal of the Korean Physical Society, v.60, no.10, pp.1803-1808 |
0 |
원문
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Journal
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2011 |
Low-Voltage High-Performance Silicon Photonic Devices and Photonic Integrated Circuits Operating up to 30 Gb/s
Kim Gyungock Optics Express, v.19, no.27, pp.26936-26947 |
78 |
원문
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Conference
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2009 |
Research about 8K Ultra High-Definition Sequence Acquisition
김기섭 한국방송공학회 학술 대회 (추계) 2009, pp.57-58 |
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Conference
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2009 |
High-Speed RPCVD Ge Waveguide Photodetector
Suh Dongwoo International Conference on Group IV Photonics (GFP) 2009, pp.16-18 |
3 |
원문
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Journal
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2009 |
36-GHz High-Responsivity Ge Photodetectors Grown by RPCVD
Suh Dongwoo IEEE Photonics Technology Letters, v.21, no.10, pp.672-674 |
38 |
원문
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Journal
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2008 |
Fabrication of an Efficient Dye-Sensitized Solar Cell with Stainless Steel Substrate
박종혁 Journal of the Electrochemical Society, v.155, no.7, pp.F145-F149 |
137 |
원문
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Conference
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2008 |
35 GHz Ge p-i-n Photodetectors Implemented Using RPCVD
Suh Dongwoo International Conference on Group IV Photonics (GFP) 2008, pp.191-193 |
5 |
원문
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Journal
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2008 |
Negative Offset Operation of Four-Transistor CMOS Image Pixels for Increased Well Capacity and Suppressed Dark Current
Bongki Mheen IEEE Electron Device Letters, v.29, no.4, pp.347-349 |
42 |
원문
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Conference
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2006 |
Effects of the Resistivity and Crystal Orientation of the Silicon PIN Detector on the Dark Current and Radiation Response Characteristics
Park Kun Sik IEEE Nuclear Science Symposium Conference Record 2006, pp.1068-1072 |
3 |
원문
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Journal
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2006 |
Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
Park Sahnggi ETRI Journal, v.28, no.5, pp.555-560 |
3 |
원문
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Conference
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2006 |
Two Dimensional 32×32 InGaAs/InP Photodiode Arrays and Dark Current Characteristics Limited by the Diffusion and Generation-Recombination
Eun Soo Nam International Conference on Optical Internet and Next Generation Network (COIN-NGNCON) 2006, pp.78-80 |
1 |
원문
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Conference
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2005 |
2-Dimnensional InGaAs/InP Photodiode Arrays on semi-insulating InP for LASER RADAR and Dark Current Characteristics
Eun Soo Nam International Conference on Advanced Materials and Devices (ICAMD) 2005, pp.78-78 |
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Conference
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2005 |
2-Dimnensional InGaAs/InP Photodiode Arrays on semi-insulating InP for LASER RADAR and Dark Current Characteristics
Eun Soo Nam Asia-Pacific Microwave Conference (APMC) 2005, pp.1-3 |
0 |
원문
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Journal
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2005 |
Reliability of InGaAs waveguide photodiodes for 40-Gb/s optical receivers
한성주 IEEE Transactions on Device and Materials Reliability, v.5, no.2, pp.262-267 |
6 |
원문
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Journal
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2002 |
Reliability of planar InP-InGaAs avalanche photodiodes with recess etching
Jihoun Jung IEEE Photonics Technology Letters, v.14, no.8, pp.1160-1162 |
16 |
원문
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