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Conference
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2024 |
Evaluation of Wavelength Switching in Distributed Bragg Reflector-Laser Diode
Taehyun Park International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1470-1472 |
0 |
원문
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Journal
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2023 |
Novel approach for implementing ternary value logic devices showing negative differential transconductance characteristics by Fowler–Nordheim tunneling
Kim Jieun Materials Science in Semiconductor Processing, v.164, pp.1-6 |
1 |
원문
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Conference
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2021 |
Analysis of Parasitic Effects by Bonding Structure
Hyun-Gyu Jang International Conference on Electronics, Information and Communication (ICEIC) 2021, pp.434-435 |
0 |
원문
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Conference
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2020 |
1700 V Full-SiC Half-bridge Power Module with Low Switching Loss
Jung Dong Yun Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4 |
1 |
원문
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Journal
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2020 |
Flexible NiO Nanocrystal-based Resistive Memory Device Fabricated by Low-temperature Solution-process
Yun Hye Won Current Applied Physics, v.20, no.2, pp.288-292 |
19 |
원문
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Journal
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2018 |
원자층 증착법을 이용한 고이동도 초박막 결정질 인듐 옥사이드 박막 트랜지스터
Lee Jongchan Applied Physics Letters, v.113, no.11, pp.1-5 |
58 |
원문
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Conference
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2018 |
Transparent Triple-layer Oxide TFT for Enhanced Photo Switching Characteristics
Lee Jongchan International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 2018, pp.1-3 |
2 |
원문
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Journal
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2012 |
Nitrogen doping effect in Ag-SbTe solid electrolyte for programmable metallisation cell memory
Park Young Sam Electronics Letters, v.48, no.8, pp.458-460 |
3 |
원문
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Journal
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2012 |
Photo-Assisted Bistable Switching Using Mott Transition in Two-Terminal VO2 Device
Seo Giwan Applied Physics Letters, v.100, no.1, pp.1-3 |
57 |
원문
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Journal
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2011 |
Critical Role of Top Interface Layer on the Bipolar Resistive Switching of Al/PEDOT:PSS/Al Memory Device
김종윤 Current Applied Physics, v.11, no.2 SUPPL., pp.e35-e39 |
7 |
원문
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Journal
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2010 |
Flexible Resistive Switching Memory Device Based on Graphene Oxide
홍설기 IEEE Electron Device Letters, v.31, no.9, pp.1005-1007 |
168 |
원문
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Journal
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2010 |
A Low-Temperature-Grown TiO2-Based Device for the Flexible Stacked RRAM Application
Hu Young Jeong Nanotechnology, v.21, no.11, pp.1-6 |
132 |
원문
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Journal
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2010 |
Bipolar Resistive Switching Characteristics of Poly(3,4-Ethylene-Dioxythiophene): Poly(Styrenesulfonate) Thin Film
Hu Young Jeong Current Applied Physics, v.10, no.1, pp.46-49 |
33 |
원문
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Journal
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2009 |
Enhanced Photo-Assisted Electrical Gating in Vanadium Dioxide based on Saturation-Induced Gain Modulation of Erbium-Doped Fiber Amplifier
이용욱 Optics Express, v.17, no.22, pp.19605-19610 |
15 |
원문
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Journal
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2008 |
Structure Effects on Resistive Switching of Al/TiOx/Al Devices for RRAM Applications
유리은 IEEE Electron Device Letters, v.29, no.4, pp.331-333 |
100 |
원문
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Journal
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2007 |
Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films
Yoon Sung Min Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 |
17 |
원문
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Journal
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2006 |
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations
Yoon Sung Min IEEE Electron Device Letters, v.27, no.6, pp.445-447 |
112 |
원문
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Journal
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2005 |
Effect of Ferroelectric Switching Time on Fatigue Behaviors of (117)- and (00l)-oriented (Bi,La)4Ti3O12 Thin Films
Yoon Sung Min Thin Solid Films, v.484, no.1-2, pp.374-378 |
11 |
원문
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Conference
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2004 |
Effective Digital IO Pin Modeling Methodology Based on IBIS Model
Kwon Won Ok Asian Simulation Conference (AsiaSim) 2004 (LNAI 3398), v.3398, pp.721-730 |
1 |
원문
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