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Journal
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2021 |
Organic/Inorganic Hybrid Thin-Film Encapsulation Using Inkjet Printing and PEALD for Industrial Large-Area Process Suitability and Flexible OLED Application
Kwon Byoung-Hwa ACS Applied Materials & Interfaces, v.13, no.46, pp.54621-55766 |
36 |
원문
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Conference
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2015 |
Characterization and Optimization of Plasma-Enhanced Chemical Vapor Deposited SiO2 Film as a Hydrogen Diffusion Barrier in Metal Oxide Thin-Film Transistors
Cho Sung Haeng International Meeting on Information Display (IMID) 2015, pp.332-332 |
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Journal
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2013 |
Phase Transition of Hydrogenated SiGe Thin Films in Plasma-Enhanced Chemical Vapor Deposition
Sun Jin Yun Thin Solid Films, v.546, pp.362-366 |
3 |
원문
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Journal
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2013 |
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
Jong-Won Lim Thin Solid Films, v.547, pp.106-110 |
10 |
원문
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Journal
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2013 |
Transparent Non-Volatile Memory Device Using Silicon Quantum Dots
Rae-Man Park Electronic Materials Letters, v.9, no.4, pp.467-469 |
6 |
원문
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Journal
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2013 |
Effect of Hydrogen Plasma Treatment on Nano-Structured TiO2 Films for the Enhanced Performance of Dye-Sensitized Solar Cell
김형진 Applied Surface Science, v.274, pp.171-175 |
43 |
원문
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Conference
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2012 |
Crystallization of Hydrogenated SiGe Thin Films Deposited by Plasma-Enhanced Chemical Vapor Deposition
IUMRS International Conference in Asia (IUMRS-ICA) 2012, pp.1-1 |
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Journal
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2011 |
Comparative Study of Silicon Quantum Dot Formation In-situ Grown with a Gas Mixture of SiH4+N2 and SiH4+NH3
Tae-Youb Kim Journal of the Korean Physical Society, v.59, no.2, pp.308-311 |
2 |
원문
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Journal
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2011 |
Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films
김준관 Journal of the Electrochemical Society, v.158, no.7, pp.D430-D434 |
7 |
원문
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Conference
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2010 |
The Thickness Effect of SiOx Layer in CIGS Thin-Film Solar Cells Fabricated on Stainless-Steel Substrate
Chung Yong-Duck Photovoltaic Specialists Conference (PVSC) 2010, pp.3401-3402 |
3 |
원문
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Journal
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2009 |
Evaluation of 1/f Noise Characteristics for Si-Based Infrared Detection Materials
Ryu Hojun ETRI Journal, v.31, no.6, pp.703-708 |
3 |
원문
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Conference
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2008 |
Sputtered Silicon Antimony Thin Film for The Infrared Detection Layer of Microbolometer
Ryu Hojun SENSORS 2008, pp.301-304 |
0 |
원문
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Conference
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2008 |
1/f Noise Characteristics of Sputtered Silicon Antimony Thin Film for Microbolometer
Ryu Hojun Eurosensors 2008, pp.877-880 |
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Journal
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 |
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Journal
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2006 |
High Negative Differential Resistance in Silicon Quantum Dot Metal-Insulator-Semiconductor Structure
Rae-Man Park Applied Physics Letters, v.89, no.15, pp.1-3 |
14 |
원문
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Journal
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Jong-Won Lim Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 |
0 |
원문
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Conference
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
원자층증착법에 의한 초박막 봉지기술
Park Sang-Hee Electrochemical and Solid-State Letters, v.8, no.2, pp.21-23 |
149 |
원문
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