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Journal
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2025 |
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4 |
0 |
원문
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Journal
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2023 |
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Min Byoung-Gue ETRI Journal, v.45, no.1, pp.171-179 |
5 |
원문
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Journal
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2020 |
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126 |
4 |
원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2019 |
DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess
Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285 |
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원문
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Journal
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Journal
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2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
3 |
원문
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Conference
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2018 |
Comparative Study of Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Gate Recess and F-treatment
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
9 |
원문
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Journal
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2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
11 |
원문
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Conference
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2015 |
Variations of DC Properties of AlGaN/GaN HEMT by Process Enhancement of Gate Recess
Min Byoung-Gue 대한전자공학회 종합 학술 대회 (하계) 2015, pp.192-195 |
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Journal
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 |
1 |
원문
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Journal
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2007 |
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892 |
4 |
원문
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Conference
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2006 |
80nm T-Shaped Gate Metamorphic HEMTs Fabricated Using Two-Step Gate Recess Process
Hyung Sup Yoon International Conference on Solid State Devices and Materials (SSDM) 2006, pp.954-955 |
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원문
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Conference
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2006 |
Gate Recess Process for 80 nm T-shaped Gate Metamorphic HEMTs on GaAs Substrate
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1 |
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Journal
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2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311 |
8 |
원문
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