Subject

Subjects : Epitaxial layer

  • Articles (11)
  • Patents (5)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2021 In situ implementation of silicon epitaxial layer on amorphous SiO2 using reduced-pressure chemical vapor deposition   Kim Sang Hoon  Applied Materials Today, v.24, pp.1-7 8 원문
Journal 2021 Monolithic Growth of GaAs Laser Diodes on Si(001) by Optimal AlAs Nucleation with Thermal Cycle Annealing   Young-Ho Ko  Optical Materials Express, v.11, no.3, pp.943-951 7 원문
Journal 2020 A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices   Min Byoung-Gue  Journal of the Korean Physical Society, v.77, no.2, pp.122-126 4 원문
Conference 2018 25Gbps Electroabsorption Modulated DFB Laser Diodes for Digital Fronthaul Network   Namje Kim  Opto-Electronics and Communications Conference (OECC) 2018, pp.1-2 1 원문
Conference 2016 A Study of Stress and its Effect on Electrical Properties of AlGaN/GaN HEMT   Jung Hyunwook  한국 반도체 학술 대회 (KCS) 2016, pp.1-1
Conference 2016 Low Polarization Dependent Loss of InP-based Waveguide Photodetector Integrated with Spot-Size Converter for 100Gb/s Coherent Receiver   Young-Ho Ko  Optical Components and Materials XIII (SPIE 9744), v.9744, pp.1-6 1 원문
Journal 2015 Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole   Min Byoung-Gue  Journal of the Korean Physical Society, v.67, no.4, pp.718-722 2 원문
Conference 2014 Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts   Hyung Sup Yoon  한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal 2005 Monolithic SiGe Up-/Down-Conversion Mixers with Active Baluns   Lee Sang-Heung  ETRI Journal, v.27, no.5, pp.569-578 3 원문
Conference 2005 Characteristics of SiGe device fabricated by SiGe BiCMOS technology and its application to a 5.8 GHz MMIC down-conversion mixer   Lee Sang-Heung  Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) 2005, pp.232-235 원문
Journal 2004 1.55 [micro sign]m bottom-emitting InAlGaAs VCSELs with Al2O3∕a-Si thin-film pairs as top mirror   Song Hyun Woo  Electronics Letters, v.40, no.14, pp.868-869 4 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2009 GERMANIUM PHOTODETECTOR AND METHOD OF FABRICATING THE SAME UNITED STATES
Registered 2007 HIGH-QUALITY CMOS IMAGE SENSOR AND PHOTO DIODE UNITED STATES
Registered 2013 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES
Registered 2005 HIGH VOLTAGE MOSFET HAVING Si/SiGe HETEROJUNCTION STRUCTURE AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2015 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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