|
Journal
|
2025 |
Gate Recess Depth-Dependent Performance Variations in AlGaN/GaN HEMTs Induced by Packaging
Junhyung Kim Electronics Letters, v.61, no.1, pp.1-4 |
0 |
원문
|
|
Conference
|
2025 |
Enhancement of RF Performance of 128-Gbaud Lumped EML Submodule Utilizing LC Resonance with Capacitive Wire-Bonding Pad
Yun Seok Jun Optical Fiber Communication Conference (OFC) 2025, pp.1-3 |
|
|
|
Journal
|
2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 |
2 |
원문
|
|
Conference
|
2024 |
Employment of 3 nm-thick h-BN passivation layer for RF performance improvement in GaN-based HEMTs
Sungjae Chang International Workshop on Nitride Semiconductors (IWN) 2024, pp.1-2 |
|
|
|
Journal
|
2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
|
|
Conference
|
2024 |
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 |
0 |
원문
|
|
Conference
|
2023 |
Impact of Parasitic Gate Capacitance on RF Performance in GaN-based HEMTs for X-band Applications
Sungjae Chang The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
|
|
|
Journal
|
2018 |
Cost-effective 400-Gbps Micro-intradyne Coherent Receiver using Optical Butt-coupling and FPCB Wirings
Lee Seo Young Optics Express, v.26, no.22, pp.28453-28460 |
2 |
원문
|
|
Conference
|
2018 |
Low-Cost Hybrid-Integrated Micro-Intradyne Coherent Receiver Using FPCB wirings
Lee Seo Young Optical Fiber Communication Conference (OFC) 2018, pp.1-3 |
2 |
|
|
Journal
|
2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
|
|
Journal
|
2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
|
|
Journal
|
2012 |
Influence of Device Dimension and Gate Recess on the Characteristics of AlGaN/GaN High Electron Mobility Transistors
Jongmin Lee Microwave and Optical Technology Letters, v.54, no.9, pp.2103-2106 |
1 |
원문
|
|
Conference
|
2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
|
|
Conference
|
2007 |
The Communication Satellite Transponder Testing by EGSE System
Jo Jin Ho Joint Conference on Satellite Communications (JC-SAT) 2007, pp.1-5 |
|
|
|
Conference
|
2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
|
|
|
Journal
|
2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311 |
8 |
원문
|
|
Conference
|
2004 |
RF performance and effect of calibration in smart antenna system
Lee Donghan Vehicular Technology Conference (VTC) 2004 (Spring), pp.30-33 |
|
원문
|
|
Journal
|
2003 |
Trenched-Sinker LDMOSFET (TS-LDMOS) Structure for 2 GHz Power Amplifiers
Kim Cheon Soo ETRI Journal, v.25, no.3, pp.195-202 |
4 |
원문
|
|
Conference
|
2002 |
RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition
Bongki Mheen International Microwave Symposium (IMS) 2002, pp.413-416 |
3 |
원문
|
|
Conference
|
2001 |
Trenched sinker LDMOSFET (TS-LDMOS) structure for high power amplifier application above 2 GHz
Kim Cheon Soo International Electron Devices Meeting (IEDM) 2001, pp.887-890 |
|
원문
|
|
Journal
|
1999 |
Thick Metal CMOS Technology on High Resistivity Substrate and Its Application to Monolithic L-Band CMOS LNAs
Kim Cheon Soo ETRI Journal, v.21, no.4, pp.1-8 |
5 |
원문
|
|
Journal
|
1998 |
The Detailed Analysis of High Q CMOS-Compatible Microwave Spiral Inductors in Silicon Technology
Min Park IEEE Transactions on Electron Devices, v.45, no.9, pp.1953-1959 |
64 |
원문
|
|
Conference
|
1997 |
Optimization of High Q CMOS-Compatible Microwave Inductors Using Silicon CMOS Technology
Min Park International Microwave Symposium (MTT-S) 1997, pp.129-132 |
5 |
|