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Journal
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2025 |
Compact Dual-Band, Dual-Circular Polarized Microstrip Antenna Array for K/Ka-Band Application
하노겸 IEEE Open Journal of Antennas and Propagation, v.6, no.2, pp.372-382 |
1 |
원문
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Conference
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2023 |
Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application
Jung Hyunwook The Electrochemical Society (ECS) Meeting 2023, pp.1-1 |
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Journal
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2023 |
Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process
Min Byoung-Gue ETRI Journal, v.45, no.1, pp.171-179 |
4 |
원문
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Journal
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2019 |
DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess
Hyung Sup Yoon 한국전자파학회논문지, v.30, no.4, pp.282-285 |
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원문
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Journal
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2018 |
Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure
곽현탁 Applied Sciences, v.8, no.6, pp.1-14 |
25 |
원문
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Journal
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2017 |
A Dual-Polarized Small base Station Antenna having a High Tx/Rx Isolation Characteristics for 900 MHz Small-Cell MIMO Systems
Lee Jung Nam Journal of Electromagnetic Waves and Applications, v.32, no.8, pp.1018-1028 |
1 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
28 |
원문
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Journal
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2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET
Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684 |
5 |
원문
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Conference
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2015 |
X-Band 0.2 μm AlGaN/GaN MISFET with SiN-Assisted Double-Deck T-Shaped Gate Structure
Hokyun Ahn International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1 |
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Journal
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2015 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho Journal of the Korean Physical Society, v.67, no.4, pp.682-686 |
3 |
원문
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Conference
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2015 |
Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs
Hyung Sup Yoon International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2015, pp.363-366 |
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Conference
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2015 |
Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2015, pp.191-191 |
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Conference
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2014 |
Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs
Kyu Jun Cho International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131 |
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Conference
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2014 |
Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts
Hyung Sup Yoon 한국 반도체 학술 대회 (KCS) 2014, pp.1-1 |
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Journal
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2007 |
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892 |
4 |
원문
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Conference
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process
Jong-Won Lim International Conference on Solid State Devices and Materials (SSDM) 2006, pp.956-957 |
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원문
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Conference
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2006 |
80nm T-Shaped Gate Metamorphic HEMTs Fabricated Using Two-Step Gate Recess Process
Hyung Sup Yoon International Conference on Solid State Devices and Materials (SSDM) 2006, pp.954-955 |
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원문
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Conference
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2006 |
Gate Recess Process for 80 nm T-shaped Gate Metamorphic HEMTs on GaAs Substrate
Hyung Sup Yoon International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1 |
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Journal
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2006 |
Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors
Shim Jae Yeob Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 |
2 |
원문
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Conference
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2006 |
Fabrication of Low Noise Amplifier using 0.15 um Power Metamorphic HEMT and It’s Noise Characteristics
Shim Jae Yeob 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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