Subject

Subjects : T-shaped gate

  • Articles (19)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Conference 2023 Novel T-Shaped Gate Structure of AlGaN/GaN HEMTs on Si for RF Application   Jung Hyunwook  The Electrochemical Society (ECS) Meeting 2023, pp.1-1
Journal 2023 Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process   Min Byoung-Gue  ETRI Journal, v.45, no.1, pp.171-179 4 원문
Journal 2019 DC and RF Characteristics of 100-nm mHEMT Devices Fabricated with a Two-Step Gate Recess   Hyung Sup Yoon  한국전자파학회논문지, v.30, no.4, pp.282-285 원문
Journal 2018 Operational Improvement of AlGaN/GaN High Electron Mobility Transistor by an Inner Field-Plate Structure   곽현탁  Applied Sciences, v.8, no.6, pp.1-14 25 원문
Journal 2016 Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate   Hyung Sup Yoon  IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 28 원문
Journal 2016 Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET   Hokyun Ahn  ETRI Journal, v.38, no.4, pp.675-684 5 원문
Conference 2015 X-Band 0.2 μm AlGaN/GaN MISFET with SiN-Assisted Double-Deck T-Shaped Gate Structure   Hokyun Ahn  International Conference on Advanced Materials and Devices (ICAMD) 2015, pp.1-1
Journal 2015 Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs   Kyu Jun Cho  Journal of the Korean Physical Society, v.67, no.4, pp.682-686 3 원문
Conference 2015 Wide Head T-Shaped Gate Process for Low-Noise AlGaN/GaN HEMTs   Hyung Sup Yoon  International Conference on Compound Semiconductor Manufacturing Technology (CS MANTECH) 2015, pp.363-366
Conference 2015 Low-Noise Microwave Performance of AlGaN/GaN HEMTs on SiC with Wide Head T-Shaped Gate   Hyung Sup Yoon  한국 반도체 학술 대회 (KCS) 2015, pp.191-191
Conference 2014 Characteristics of a Field Plate Connected to T-shaped Gate in AlGaN/GaN HEMTs   Kyu Jun Cho  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2014, pp.131-131
Conference 2014 Characteristics of AlGaN/GaN HEMTs on SiC with Pt-based Schottky Contacts   Hyung Sup Yoon  한국 반도체 학술 대회 (KCS) 2014, pp.1-1
Journal 2007 Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates   Hyung Sup Yoon  Journal of the Korean Physical Society, v.50, no.3, pp.889-892 4 원문
Conference 2006 Comparative Study of DC and Microwave Characteristics of 0.12 μm T-Shaped Gate AlGaAs/InGaAs/GaAs PHEMTs Using a Hybrid and Conventional E-beam Lithography Process   Jong-Won Lim  International Conference on Solid State Devices and Materials (SSDM) 2006, pp.956-957 원문
Conference 2006 80nm T-Shaped Gate Metamorphic HEMTs Fabricated Using Two-Step Gate Recess Process   Hyung Sup Yoon  International Conference on Solid State Devices and Materials (SSDM) 2006, pp.954-955 원문
Conference 2006 Gate Recess Process for 80 nm T-shaped Gate Metamorphic HEMTs on GaAs Substrate   Hyung Sup Yoon  International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2006, pp.1-1
Journal 2006 Extremely Low Noise Characteristics of 0.15 µm Power Metamorphic High-Electron-Mobility Transistors   Shim Jae Yeob  Japanese Journal of Applied Physics, v.45, no.4B, pp.3380-3383 2 원문
Conference 2006 Fabrication of Low Noise Amplifier using 0.15 um Power Metamorphic HEMT and It’s Noise Characteristics   Shim Jae Yeob  한국반도체 학술 대회 (KCS) 2006, pp.1-2
Journal 2005 DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs   Shim Jae Yeob  ETRI Journal, v.27, no.6, pp.685-690 5 원문
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