|
Journal
|
2024 |
Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 |
2 |
원문
|
|
Journal
|
2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
|
|
Journal
|
2018 |
NDR-effect Vertical-illumination-type Ge-on-Si Avalanche Photodetector
Kim Gyungock Optics Letters, v.43, no.22, pp.5583-5586 |
21 |
원문
|
|
Journal
|
2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
22 |
원문
|
|
Conference
|
2017 |
Security Enhanced Search and Rescue System by Using LTE and COSPAS SARSAT
Lee Sang Uk Baska GNSS Conference 2017, pp.109-119 |
|
|
|
Journal
|
2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 |
5 |
원문
|
|
Journal
|
2016 |
Study of a Betavoltaic Battery Using Electroplated Nickel-63 on Nickel Foil as a Power Source
엄영랑 Nuclear Engineering and Technology, v.48, no.3, pp.773-777 |
17 |
원문
|
|
Journal
|
2015 |
Study of the Electroless Deposition of Ni for Betavoltaic Battery Using PN Junction without Seed Layer
김진주 Journal of Nanomaterials, v.2015, pp.1-6 |
4 |
원문
|
|
Journal
|
2014 |
Simple Technique for Evaluating Dimensional and Compositional Changes in Selective-Area-Grown MQW Laser Diode
Kwon Oh Kee Optics Express, v.22, no.19, pp.23694-23703 |
4 |
원문
|
|
Journal
|
2013 |
Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient
Choi Won Chul Journal of Nanoscience and Nanotechnology, v.13, no.12, pp.7801-7805 |
6 |
원문
|
|
Journal
|
2013 |
Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
Hyun-Tak Kim Applied Physics Letters, v.103, no.17, pp.1-3 |
2 |
원문
|
|
Conference
|
2013 |
Metal-Insulator Transition Mechanism and Sensors Using Mott Insulator VO2
Hyun-Tak Kim NATO Advanced Research Workshop on Nanotechnology in the Security Systems 2013, v.NATO SPC C, pp.205-214 |
0 |
원문
|
|
Journal
|
2012 |
Characteristics of NiO–AZO thin films deposited by magnetron co-sputtering in an O2 atmosphere
H.W. Park Materials Letters, v.74, pp.30-32 |
13 |
원문
|
|
Journal
|
2012 |
Nanogap-Based Electrical PNA Chips for the Detection of Genetic Polymorphism of Cytochrome P450 2C19
박대근 Journal of Nanoscience and Nanotechnology, v.12, no.7, pp.5155-5159 |
2 |
원문
|
|
Journal
|
2011 |
Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes
Tae-Youb Kim Japanese Journal of Applied Physics, v.50, no.4 PART 2, pp.1-3 |
4 |
원문
|
|
Journal
|
2011 |
Critical Role of Top Interface Layer on the Bipolar Resistive Switching of Al/PEDOT:PSS/Al Memory Device
김종윤 Current Applied Physics, v.11, no.2 SUPPL., pp.e35-e39 |
7 |
원문
|
|
Journal
|
2010 |
Electrical Quadruple Hysteresis in Pd-Doped Vanadium Pentoxide Nanowires Due to Water Adsorption
Kim Byunghoon Science and Technology of Advanced Materials, v.11, no.6, pp.1-6 |
4 |
원문
|
|
Journal
|
2010 |
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150 |
87 |
원문
|
|
Journal
|
2010 |
Bipolar Resistive Switching Characteristics of Poly(3,4-Ethylene-Dioxythiophene): Poly(Styrenesulfonate) Thin Film
Hu Young Jeong Current Applied Physics, v.10, no.1, pp.46-49 |
33 |
원문
|
|
Journal
|
2009 |
Flexible Organic Thin-Film Transistors for Photodetectors
권재홍 Journal of the Korean Physical Society, v.55, no.1, pp.72-75 |
9 |
원문
|
|
Journal
|
2009 |
Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail State
Jaeheon Shin Journal of the Korean Physical Society, v.54, no.1, pp.527-530 |
24 |
원문
|
|
Journal
|
2009 |
Passivation of Bottom-Gate IGZO Thin Film Transistors
Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534 |
43 |
원문
|
|
Journal
|
2007 |
Electrical and microstructural properties of low‐resistance Ti/Re/Au ohmic contacts to n‐type GaN
V. Rajagopal Reddy Physica Status Solidi (A), v.204, no.10, pp.3392-3397 |
0 |
원문
|
|
Journal
|
2006 |
Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations
Yoon Sung Min IEEE Electron Device Letters, v.27, no.6, pp.445-447 |
112 |
원문
|
|
Journal
|
2005 |
Surface-Treatment Effects on Organic Thin-Film Transistors
Lim Sang Chul Synthetic Metals, v.148, no.1, pp.75-79 |
208 |
원문
|
|
Journal
|
2001 |
Fabrication of RS flip-flops using Y-Ba-Cu-O ramp-edge junctions and their operation
J. H. Park IEEE Transactions on Applied Superconductivity, v.11, no.1, pp.932-935 |
4 |
원문
|