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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2017 |
Control of PN-Junction Turn-on Voltage in 4H-SiC merged PiN Schottky Diode
Junbo Park Applied Physics Letters, v.110, no.14, pp.1-5 |
7 |
원문
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Conference
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2017 |
Surge Current Capacity of 4H-SiC Merged PiN Schottky Diode
Junbo Park 한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
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Conference
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2016 |
0.84-THz Imaging Pixel with a Lock-in Amplifier in CMOS
Rui Xu Radio Frequency Integrated Circuits (RFIC) Symposium 2016, pp.166-169 |
7 |
원문
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Conference
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2015 |
Photoelectric Characteristics of Schottky Diode Based on a Ge/Si Core/Shell Nanowire
Suh Dongwoo International Conference on Sensing Technology (ICST) 2015, pp.199-202 |
0 |
원문
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Conference
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2014 |
Group IV Nanowires for Ultra-high Performance Photonic Devices
Suh Dongwoo International Nanotechnology Symposium (Nanofair) 2014, pp.1-2 |
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Conference
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2013 |
Characterization of Ge/Si Core/Shell Nanowire Schottky Diodes
Suh Dongwoo International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2013, pp.1-2 |
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Journal
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2012 |
Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator
Kim Yong Hae Japanese Journal of Applied Physics, v.51, no.9 PART3, pp.1-4 |
0 |
원문
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Conference
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2012 |
Four Layered PCB Antenna for Magnetically Coupled Wireless Power Transmission to OLED Lighting Panel
Kim Yong Hae International Symposium on Antenna Technology and Applied Electromagnetics (ANTEM) 2012, pp.1-3 |
0 |
원문
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Conference
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2011 |
Wireless Charging Technology using Magnetically Coupled Resonators
Kim Yong Hae International Telecommunications Energy Conference (INTELEC) 2011, pp.1-3 |
4 |
원문
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Journal
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2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
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Journal
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2010 |
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150 |
87 |
원문
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Conference
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2010 |
Organic Schottky Diode Rectifier on Flexible Substrates
Soon-Won Jung IUMRS International Conference on Electronic Materials (IUMRS-ICEM) 2010, pp.1-1 |
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Journal
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2010 |
Variations in the Electric Characteristics of an Organic Schottky Diode with the P3HT Thickness
Kim Kang Dae Journal of the Korean Physical Society, v.57, no.1, pp.124-127 |
10 |
원문
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Conference
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2010 |
Wireless PtP System in E-band for Gigabit Ethernet
Kang Min Soo International Conference on Advanced Communication Technology (ICACT) 2010, pp.733-736 |
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Conference
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2009 |
Organic Schottky Diode for Flexible Organic RFID
Kim Kang Dae International Conference on Flexible and Printed Electronics (ICFPE) 2009, pp.11-13 |
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Journal
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2008 |
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 |
5 |
원문
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Journal
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2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
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Conference
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2007 |
Schottky Barrier Heights of ErSi1.7 Schottky Diodes
Jun Myung Sim International Conference on Micro and Nano Engineering (MNE) 2007, pp.1-2 |
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Journal
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2007 |
Analysis of Interface Trap States at Schottky Diode by using Equivalent Circuit Modeling
Jun Myung Sim Journal of Vacuum Science and Technology B, v.25, no.1, pp.82-85 |
5 |
원문
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Journal
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2006 |
N2-Annealing Effects on Characteristics of Schottky-Barrier MOSFETS
Jang Moon Gyu IEEE Transactions on Electron Devices, v.53, no.8, pp.1821-1825 |
28 |
원문
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Conference
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2006 |
New Analysis on the Interface Trap States at Schottky Contact
Jun Myung Sim International Conference on the Physics of Semiconductors (ICPS) 2006, pp.1-2 |
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Journal
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2003 |
Electrical Characteristics of Metal-Insulator-Semiconductor Schottky Diodes using a Photowashing Treatment in AlxGa1-xAs/InGaAs (X=0.75) Pseudomorphic High Electron Mobility Transistors
Sang Youn Han Journal of Vacuum Science and Technology B, v.21, no.5, pp.2133-2137 |
8 |
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Journal
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2002 |
Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model
Jang Moon Gyu ETRI Journal, v.24, no.6, pp.455-461 |
39 |
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Journal
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2002 |
Design of double‐balanced MMIC mixer for Ka‐band satellite communications
Ryu Keun Kwan Microwave and Optical Technology Letters, v.34, no.6, pp.401-403 |
4 |
원문
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