|
Conference
|
2023 |
Fabrication of AlGaN/GaN Heterostructure FET using Multi-Step Ohmic Annealing Process
Kim Zin-Sig 한국반도체 학술대회 (KCS) 2023, pp.746-746 |
|
|
|
Journal
|
2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
|
원문
|
|
Journal
|
2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
|
원문
|
|
Journal
|
2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
도재원 Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
|
|
Journal
|
2020 |
Recess-Etched and Tetramethylammonium Hydroxide-Treated Nanoscale Pattern on AlGaN/GaN High-Electron-Mobility-Transistors for Improved Ohmic Contact
Jung Hyunwook Journal of the Korean Physical Society, v.76, no.9, pp.837-842 |
0 |
원문
|
|
Conference
|
2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
|
|
|
Journal
|
2019 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.19, no.10, pp.6119-6122 |
|
원문
|
|
Conference
|
2019 |
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2019, pp.618-619 |
|
|
|
Journal
|
2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
김정길 Solid-State Electronics, v.152, pp.24-28 |
9 |
원문
|
|
Conference
|
2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Kim Zin-Sig 대한전자공학회 학술 대회 (하계) 2018, pp.195-198 |
|
|
|
Journal
|
2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
|
|
Conference
|
2018 |
Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on CVD Diamond
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
|
|
|
Conference
|
2017 |
Fabrication of Schottky Barrier Diodes on AlGaN/GaN Heterostructures on CVD Diamond Substrate
Kim Zin-Sig Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2017, pp.1-1 |
|
|
|
Journal
|
2017 |
Growth of 10 nm‐thick AlIn(Ga)N/GaN heterostructure with high electron mobility and low sheet resistance
김정길 Physica Status Solidi (B), v.254, no.8, pp.1-5 |
2 |
원문
|
|
Journal
|
2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
10 |
원문
|
|
Conference
|
2016 |
Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure
Kim Zin-Sig International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
|
|
|
Conference
|
2016 |
Characteristic of Schottky Barrier Diode on AlGaN/GaN using Mo-based Ohmic Contact
Kim Zin-Sig 대한전자공학회 종합 학술 대회 (하계) 2016, pp.400-403 |
|
|
|
Journal
|
2015 |
Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates
Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784 |
3 |
원문
|
|
Conference
|
2014 |
Formation of Ohmic Contact to AlGaN/GaN Heterostructure on Sapphire
Kim Zin Sig 한국진공학회 정기 학술 대회 (동계) 2014, pp.292-292 |
|
|
|
Journal
|
2007 |
Influence of a Strained AlGaN Overlayer on the GaN Matrix near AlGaN/GaN Heterointerfaces
이상준 Journal of the Korean Physical Society, v.51, no.3, pp.1050-1054 |
6 |
원문
|
|
Journal
|
2006 |
Experimental Evidence for Drude-Boltzmann-Like Transport in a Two-Dimensional Electron Gas in an AlGaN/GaN Heterostructure
Jing Han Chen Journal of the Korean Physical Society, v.48, no.6, pp.1539-1543 |
|
|