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Journal
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2017 |
Coupling Two-Dimensional MoTe2 and InGaZnO Thin-Film Materials for Hybrid PN Junction and CMOS Inverters
이한솔 ACS Applied Materials & Interfaces, v.9, no.18, pp.15592-15598 |
31 |
원문
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Journal
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2017 |
Receiver Memory Management Method for HARQ in LTE-based Satellite Communication System
Hong Tae Chul International Journal of Satellite Communications and Networking, v.35, no.1, pp.3-15 |
3 |
원문
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Journal
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2014 |
Electrical Properties of Solution-Deposited ZnO Thin-Film Transistors by Low-Temperature Annealing
Lim Sang Chul Journal of Nanoscience and Nanotechnology, v.14, no.11, pp.8665-8670 |
8 |
원문
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Journal
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2014 |
Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process
Lim Sang Chul Japanese Journal of Applied Physics, v.53, no.5S3, pp.1-5 |
8 |
원문
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Conference
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2013 |
A Scheduling Algorithm for Selective Repeat HARQ type II in the Mobile Satellite System
Hong Tae Chul International Conference on Information and Communication Technology Convergence (ICTC) 2013, pp.902-906 |
2 |
원문
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Journal
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2012 |
Controlled Charge Transport by Polymer Blend Dielectrics in Top-Gate Organic Field-Effect Transistors for Low-Voltage-Operating Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.4, no.11, pp.6176-6184 |
82 |
원문
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Journal
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2012 |
Remarkable Enhancement of Hole Transport in Top‐Gated N‐Type Polymer Field‐Effect Transistors by a High‐k Dielectric for Ambipolar Electronic Circuits
Kang-Jun Baeg Advanced Materials, v.24, no.40, pp.5433-5439 |
182 |
원문
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Conference
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2012 |
A Single-Input Level Shifter for Oxide TFTs
김준동 International Meeting on Information Display (IMID) 2012, pp.1-2 |
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Journal
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2012 |
High Performance of Ultralow Temperature Polycrystalline Silicon Thin Film Transistor on Plastic Substrate
박동진 Solid-State Electronics, v.75, pp.97-101 |
2 |
원문
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Journal
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2011 |
Charge Injection Engineering of Ambipolar Field-Effect Transistors for High-Performance Organic Complementary Circuits
Kang-Jun Baeg ACS Applied Materials & Interfaces, v.3, no.8, pp.3205-3214 |
154 |
원문
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Journal
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2011 |
Improved Performance Uniformity of Inkjet Printed N-channel Organic Field-effect Transistors and Complementary Inverters
Kang-Jun Baeg Organic Electronics, v.12, no.4, pp.634-640 |
66 |
원문
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Journal
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2011 |
High speeds complementary integrated circuits fabricated with all‐printed polymeric semiconductors
Kang-Jun Baeg Journal of Polymer Science Part B : Polymer Physics, v.49, no.1, pp.62-67 |
103 |
원문
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Journal
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2010 |
High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique
Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805 |
3 |
원문
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Journal
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2010 |
High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain
Choi Sungjin IEEE Electron Device Letters, v.31, no.3, pp.228-230 |
15 |
원문
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Conference
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2009 |
A High Density Nano-Scale N-Channel Trench Gate Power MOSFET using Self-Aligned Technique
Kim Sang Gi International Conference on Microwave and Photonics (ICMAP) 2009, pp.1-1 |
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Journal
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2009 |
Fabrication of N- and P-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods
신진욱 Japanese Journal of Applied Physics, v.48, no.4, pp.1-4 |
0 |
원문
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Journal
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2008 |
A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-k and Metal Gate on Si
Oh Soon-Young Japanese Journal of Applied Physics, v.47, no.4, pp.3091-3094 |
7 |
원문
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Conference
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2007 |
Selective Repeat Hybrid ARQ Type II in the GEO Satellite Networks
Hong Tae Chul Vehicular Technology Conference (VTC) 2007 (Spring), pp.1370-1374 |
5 |
원문
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Journal
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2006 |
Significance of Gate Oxide Thinning below 1.5 nm on 1/ f Noise Behavior in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors under Electrical Stress
Bongki Mheen Japanese Journal of Applied Physics, v.45, no.6A, pp.4943-4947 |
0 |
원문
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Conference
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2005 |
Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil
Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4 |
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Journal
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2005 |
Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications
Bongki Mheen ETRI Journal, v.27, no.4, pp.439-445 |
8 |
원문
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