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Journal
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2022 |
Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
Kang Soo Cheol Current Applied Physics, v.39, pp.128-132 |
0 |
원문
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
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2017 |
Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186 |
1 |
원문
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Conference
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2016 |
High Performance Solution-processed Indium-free Metal Oxide Thin-film Transistors
Sooji Nam International Meeting on Information Display (IMID) 2016, pp.188-188 |
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Conference
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2015 |
The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering
Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18 |
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Conference
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2014 |
33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors
Cho Sung Haeng Society for Information Display (SID) International Symposium 2014, v.45, no.1, pp.473-475 |
5 |
원문
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Journal
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2014 |
Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors
Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133 |
21 |
원문
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Journal
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2012 |
Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors
박준용 Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5 |
20 |
원문
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Journal
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2011 |
Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance
Yang Shinhyuk IEEE Electron Device Letters, v.32, no.12, pp.1692-1694 |
60 |
원문
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Conference
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2011 |
Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors
Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116 |
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Journal
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2011 |
Light Response of Top Gate InGaZnO Thin Film Transistor
Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4 |
7 |
원문
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Journal
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2009 |
Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors
Jaeheon Shin ETRI Journal, v.31, no.1, pp.62-64 |
189 |
원문
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Journal
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2008 |
Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor
전재홍 Journal of the Korean Physical Society, v.53, no.1, pp.412-415 |
8 |
원문
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Conference
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2008 |
P‐22: Electrical Stability of ZnO TFT during Gate‐Bias Stress
김태현 Society for Information Display (SID) International Symposium 2008, pp.1250-1253 |
1 |
원문
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Journal
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2007 |
Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric
Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3 |
58 |
원문
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Conference
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2006 |
The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress
Hwang Chi-Sun The Electrochemical Society (ECS) Meeting 2006, pp.301-305 |
2 |
원문
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