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Conference
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2024 |
GaAs mHEMT Technology Achieving a High Cut-off Frequncy of 446 GHz with a Gate Length of 75 nm
Park Jongyul International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1468-1469 |
0 |
원문
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Conference
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2022 |
InAlGaN/GaN HEMTs with over cut-off frequency of 160 GHz
Sungjae Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2022, pp.1-1 |
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Journal
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2021 |
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Sungjae Chang Crystals, v.11, no.11, pp.1-10 |
6 |
원문
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Journal
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2021 |
Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors
Lim Jungwook Advanced Electronic Materials, v.7, no.4, pp.1-7 |
10 |
원문
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Conference
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2019 |
A Self-Equalized 8-poles Channel Filter for Ka-band Satellite Payloads
Lee Hongyeol Asia-Pacific Conference on Antennas and Propagation (APCAP) 2019, pp.418-419 |
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Conference
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2019 |
GaN Device Technology for High Voltage and RF Power Application
Hyung Seok Lee 한러 과학기술의 날 2019, pp.1-1 |
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
7 |
원문
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Conference
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2015 |
Enhanced Transmittance of Substrate UV Cut-Off Film with Imprinted Moth-Eye
Kim Ju Mi IUMRS International Conference on Advanced Materials (IUMRS-ICAM) 2015, pp.1-1 |
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Journal
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2015 |
Classification-Based Approach for Hybridizing Statistical and Rule-Based Machine Translation
Park Eun Jin ETRI Journal, v.37, no.3, pp.541-550 |
3 |
원문
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Conference
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2014 |
Group IV Nanowires for Ultra-high Performance Photonic Devices
Suh Dongwoo International Nanotechnology Symposium (Nanofair) 2014, pp.1-2 |
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Journal
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2011 |
More Efficient Home Energy Management System Based on ZigBee Communication and Infrared Remote Controls
Jinsoo Han IEEE Transactions on Consumer Electronics, v.57, no.1, pp.85-89 |
155 |
원문
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Conference
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2010 |
Device Characteristics of AlGaN/GaN HEMT for S/X-band Applications
Woojin Chang 대한전자공학회 종합 학술 대회 (하계) 2010, pp.1984-1987 |
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Conference
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2009 |
A 0.13μm CMOS UWB Receiver for Impulse Radio and MB-OFDM Based WPAN Applications
Lee. Young-Jae European Microwave Integrated Circuits Conference (EuMIC) 2009, pp.37-40 |
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Journal
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2009 |
Remote-Controllable and Energy-Saving Room Architecture Based on ZigBee Communication
Jinsoo Han IEEE Transactions on Consumer Electronics, v.55, no.1, pp.264-268 |
46 |
원문
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Conference
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2009 |
Remote-Controllable and Energy-Saving Room Architecture based on ZigBee Communication
Jinsoo Han Remote-Controllable and Energy-Saving Room Architecture based on ZigBee Communication, pp.1-2 |
70 |
원문
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Journal
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2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 |
4 |
원문
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Conference
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2007 |
Influence of Gate Head Dimensions on the Device Performance of 0.12um PHEMT
Hokyun Ahn Asia-Pacific Microwave Conference (APMC) 2007, pp.1-4 |
0 |
원문
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Journal
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2007 |
Gate Recess Process for 80-nm T-Shaped Gate Metamorphic HEMTs on GaAs Substrates
Hyung Sup Yoon Journal of the Korean Physical Society, v.50, no.3, pp.889-892 |
4 |
원문
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Journal
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2007 |
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Jongmin Lee Journal of the Korean Physical Society, v.50, no.3, pp.871-874 |
2 |
원문
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Journal
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2006 |
Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206 |
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Journal
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2006 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Lee Seung-Yun Solid-State Electronics, v.50, no.3, pp.333-339 |
4 |
원문
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Conference
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2006 |
Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Journal
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2005 |
DC and RF Characteristics of 0.15 um Power Metamorphic HEMTs
Shim Jae Yeob ETRI Journal, v.27, no.6, pp.685-690 |
5 |
원문
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Conference
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2005 |
A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness
Kim Yong Won Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
0 |
원문
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Journal
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2005 |
A Comparative Study of a Dielectric-Defined Process on AlGaAs/InGaAs/GaAs PHEMTs
Jong-Won Lim ETRI Journal, v.27, no.3, pp.304-311 |
8 |
원문
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