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Journal
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2023 |
Optimized recess etching criteria for T-gate fabrication achieving ft = 290 GHz at Lg = 124 nm in metamorphic high electron mobility transistor with In0.7Ga0.3As channel
Jong Yul Park Electronics Letters, v.59, no.14, pp.1-3 |
2 |
원문
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Journal
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2017 |
Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single- Layer MoS2 Device
Mohammad Asif Khan ACS Applied Materials & Interfaces, v.9, no.32, pp.26983-26989 |
8 |
원문
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Journal
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2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 |
37 |
원문
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Journal
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2012 |
Low Temperature Characteristics of Schottky Barrier Single Electron and Single Hole Transistors
Jang Moon Gyu ETRI Journal, v.34, no.6, pp.950-953 |
1 |
원문
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Journal
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2010 |
Maskless Laser Direct Patterning of PEDOT/PSS Layer for Soluble Process Organic Thin Film Transistor
Shin Hongsik Journal of Nanoscience and Nanotechnology, v.10, no.5, pp.3185-3188 |
9 |
원문
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Journal
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2009 |
Chalcogen-based thin film transistor using CuInSe2 photo-active layer
김경암 Current Applied Physics, v.9, no.6, pp.1326-1329 |
5 |
원문
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Conference
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2009 |
Fabrication of ZnO TFTs by Micro-Contact Printing of Silver Ink Electrodes
Shin Hongsik International Meeting on Information Display (IMID) 2009, pp.1600-1603 |
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Journal
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2009 |
Process development of ITO source/drain electrode for the top-gate indium–gallium–zinc oxide transparent thin-film transistor
Cheong Woo-Seok Thin Solid Films, v.517, no.14, pp.4094-4099 |
23 |
원문
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Journal
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2009 |
Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method
Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.04C089-1-04C089-5 |
0 |
원문
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Journal
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2008 |
Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713 |
140 |
원문
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