Conference
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2024 |
Design and Simulation of Normally-Off GaN FINFET
문수영 한국반도체 학술대회 (KCS) 2024, pp.1-1 |
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Jeonggil Kim Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
이준혁 Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Journal
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2020 |
Fabrication of Multi-Fin-Gate GaN HEMTs Using Honeycomb Shaped Nano-Channel
Kim Jeong Jin 전기전자재료학회논문지, v.33, no.1, pp.16-20 |
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Conference
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2019 |
Effects of Recess Depth on the Vth-shift for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2019, pp.618-619 |
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Journal
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2019 |
GaN MIS-HEMT PA MMICs for 5G Mobile Devices
Kim Seong-Il Journal of the Korean Physical Society, v.74, no.2, pp.196-200 |
5 |
원문
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Journal
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2018 |
Technical Trends of Semiconductors for Harsh Environments
Woojin Chang 전자통신동향분석, v.33, no.6, pp.12-23 |
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원문
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Journal
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2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
조영우 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
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Journal
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2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
손동혁 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Conference
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2018 |
Comparative Study of Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Gate Recess and F-treatment
Jung Hyunwook 한국 반도체 학술 대회 (KCS) 2018, pp.1-1 |
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Journal
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2017 |
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68 |
16 |
원문
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Conference
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2017 |
Normally-off AlGaN/GaN Field Effect Transistors with Recessed Gate using Ultra-low Rate Dry Etching Conditions
Kim Zin-Sig 한국 반도체 학술 대회 (KCS) 2017, pp.1-1 |
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Conference
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2016 |
Ultra-low Rate Dry Etching Conditions for Fabrication of Normally-off Field Effect Transistor on AlGaN/GaN Heterostructure
Kim Zin-Sig International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
Common-Source Inductance Reduction in GaN Cascode FET for High- Speed Switching and High-Efficiency Operation
Woojin Chang International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Conference
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2016 |
스위칭 전원 회로용 Normally-off GaN-FET를 위한 캐스 코드 회로 분석
Jung Dong Yun 한국 반도체 학술 대회 (KCS) 2016, pp.1-1 |
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Journal
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2015 |
Normally-off GaN MIS-HEMT Using a Combination of Recessed-Gate Structure and CF4 Plasma Treatment
Park Young Rak Physica Status Solidi (A), v.2112, no.5, pp.1170-1173 |
11 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2014 |
Normally-Off Dual Gate AlGaN/GaN MISFET with Selective Area-Recessed Floating Gate
Hokyun Ahn Solid-State Electronics, v.95, pp.42-45 |
18 |
원문
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Conference
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2013 |
Performance of Normally-off AlGaN/AlN/GaN MISFET including a Gate-connected Field Plate
Hokyun Ahn 대한전자공학회 종합 학술 대회 (하계) 2013, pp.1843-1844 |
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Conference
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2013 |
Effects of Various Field Plates for Normally-Off GaN MISFETs
Woojin Chang International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2013, pp.332-333 |
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Conference
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2013 |
Device Characteristics of Normally-Off GaN MISFET Including Field Plates
Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2013, pp.1-2 |
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