Conference
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2024 |
Impact of Gate Length Scaling on DC and RF Performance in AlGaN/GaN HEMTs
Jung Hyunwook International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1443-1444 |
0 |
원문
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Journal
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2019 |
Origin of the Dry Etch Damage in the Short-channel Oxide Thin-film Transistors for High Resolution Display Application
Ji Hun Choi Thin Solid Films, v.674, pp.71-75 |
7 |
원문
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Conference
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2018 |
Ultimate Resolution Active Matrix Display with Oxide TFT Backplanes for Electronic Holographic Display
Hwang Chi-Sun Society for Information Display (SID) International Symposium 2018, pp.610-612 |
13 |
원문
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Journal
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2017 |
Technical Trend of Fusion Semiconductor Devices Composed of Silicon and Compound Materials
Lee Sang-Heung 전자통신동향분석, v.32, no.6, pp.8-16 |
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원문
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Journal
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2017 |
1- $\mu \text{m}$ Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
Ji Hun Choi IEEE Electron Device Letters, v.38, no.10, pp.1398-1400 |
13 |
원문
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Journal
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2015 |
Highly Stable, High Mobility Al:SnZnInO Back-Channel Etch Thin-Film Transistor Fabricated Using PAN-Based Wet Etchant for Source and Drain Patterning
Cho Sung Haeng IEEE Transactions on Electron Devices, v.62, no.11, pp.3653-3657 |
37 |
원문
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Journal
|
2014 |
Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method
Hwang Chi-Sun IEEE Electron Device Letters, v.35, no.3, pp.360-362 |
54 |
원문
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Conference
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2012 |
Organic Thin-Film Transistor with Short channel length using silver electrodes by the Reverse Offset Printing technology
Minseok Kim MRS Meeting 2012 (Spring), pp.1-1 |
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Journal
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2012 |
The characteristics of sub-10nm gate-length erbium-silicided n-type Schottky barrier metal-oxide-semiconductor field-effect-transistors
Jang Moon Gyu Thin Solid Films, v.520, no.6, pp.2166-2169 |
1 |
원문
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Conference
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2011 |
Improvement of Top-Gate Staggered OTFT with Short Channel length using Reverse Offset Printing Technology
Minseok Kim International Conference on Advanced Electromaterials (ICAE) 2011, pp.1-1 |
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Journal
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2011 |
Organic Thin-Film Transistors with Short Channel Length Fabricated by Reverse Offset Printing
Minseok Kim Electrochemical and Solid-State Letters, v.14, no.8, pp.H333-H336 |
38 |
원문
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
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Conference
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2010 |
Fabrication of Organic Thin Film Transistors with Short Channel Length by Reverse Offset Printing
Minseok Kim International Meeting on Information Display (IMID) 2010 / International Display Manufacturing Conference (IDMC) 2010 / Asia Display 2010, pp.1-2 |
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Journal
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2010 |
High-Performance Polycrystalline Silicon TFT on the Structure of a Dopant-Segregated Schottky-Barrier Source/Drain
Choi Sungjin IEEE Electron Device Letters, v.31, no.3, pp.228-230 |
15 |
원문
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Journal
|
2008 |
Downscaling of Organic Field‐Effect Transistors with a Polyelectrolyte Gate Insulator
Lars Herlogsson Advanced Materials, v.20, no.24, pp.4708-4713 |
140 |
원문
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Conference
|
2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
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Journal
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2007 |
Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
조원주 Journal of the Korean Physical Society, v.51, pp.S313-S317 |
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Journal
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2006 |
The Effect of Channel Length on Turn-on Voltage in Pentacene-Based Thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.7-8, pp.533-536 |
25 |
원문
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Journal
|
2004 |
Fabrication of 50-nm gate SOI n-MOSFETs using novel plasma-doping technique
Cho Wonju IEEE Electron Device Letters, v.25, no.6, pp.366-368 |
35 |
원문
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Journal
|
2001 |
A new technique to extract channel mobility in submicron MOSFETs using inversion charge slope obtained from measured S-parameters
Seonghearn Lee IEEE Transactions on Electron Devices, v.48, no.4, pp.784-788 |
12 |
원문
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Journal
|
2000 |
A semianalytical parameter extraction of a SPICE BSIM3v3 for RF MOSFET's using S-parameters
Seonghearn Lee IEEE Transactions on Microwave Theory and Techniques, v.48, no.3, pp.412-416 |
26 |
원문
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