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Journal
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2020 |
A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices
Min Byoung-Gue Journal of the Korean Physical Society, v.77, no.2, pp.122-126 |
4 |
원문
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Journal
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2014 |
The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process
Woo Jong Chang Transactions on Electrical and Electronic Materials, v.15, no.1, pp.49-54 |
1 |
원문
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Journal
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2013 |
Dry Etching Characteristics of Indium Zinc Oxide Thin Films in Adaptive Coupled Plasma
Woo Jong Chang Transactions on Electrical and Electronic Materials, v.14, no.4, pp.216-220 |
1 |
원문
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Conference
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2013 |
Sub-22 nm Silicon Template Nanofabrication by Advanced Spacer Patterning Technique for NIL Applications
Park Jong-Moon Alternative Lithographic Technologies V (SPIE 8680), pp.1-8 |
0 |
원문
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Journal
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2011 |
Dry Etching of TiN in N2/Cl2/Ar Adaptively Coupled Plasma
Kim Dong -Pyo Vacuum, v.86, no.4, pp.380-385 |
5 |
원문
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Journal
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2011 |
Analysis of Etching Mechanism and Etched Slope Control of Silicon for Nanoimprinting Lithography
함용현 Journal of Nanoscience and Nanotechnology, v.11, no.7, pp.6523-6527 |
0 |
원문
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Journal
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2011 |
Effect of Deposition Conditions and Crystallinity of Substrate on Phase Transition of Hydrogenated Si Films
김준관 Journal of the Electrochemical Society, v.158, no.7, pp.D430-D434 |
7 |
원문
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Journal
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2011 |
Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas
함용현 Vacuum, v.85, no.11, pp.1021-1025 |
9 |
원문
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Journal
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2010 |
Surface Characteristics of Parylene-C Films in an Inductively Coupled O2/CF4 Gas Plasma
Ham Yong-Hyun Thin Solid Films, v.518, no.22, pp.6378-6381 |
17 |
원문
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Journal
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2010 |
Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas
김문근 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-6 |
5 |
원문
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Conference
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2009 |
Study on the Surface Characteristics of Parylene-C Films in Inductively Coupled O2/CF4 Gas Plasma
Ham Yong-Hyun International Meeting on Information Display (IMID) 2009, pp.1399-1401 |
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Journal
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2009 |
Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2 O and O2 Inductively Coupled Plasmas: A Comparative Study
권광호 Japanese Journal of Applied Physics, v.48, no.8, pp.1-4 |
2 |
원문
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Journal
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2009 |
Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
한용현 Japanese Journal of Applied Physics, v.48, no.8, pp.08HD041-08HD045 |
8 |
원문
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Journal
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2008 |
Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X=Ar, He, N2) Inductively Coupled Plasmas
Alexander Efremov Journal of the Electrochemical Society, v.155, no.12, pp.D777-D782 |
72 |
원문
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Journal
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2008 |
Etching Characteristics of Al2O3 Thin Films in Inductively Coupled BCl3/Ar Plasma
Sun Jin Yun Vacuum, v.82, no.11, pp.1198-1202 |
14 |
원문
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Journal
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2008 |
Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
김만수 ETRI Journal, v.30, no.3, pp.383-393 |
10 |
원문
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Journal
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2008 |
Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma
김만수 Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351 |
14 |
원문
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Journal
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2005 |
Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 |
36 |
원문
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Journal
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2002 |
Characterization of Via Etching in CHF3/CF4 Magnetically Enhanced Reactive Ion Etching Using Neural Networks
Kwon Sung-Ku ETRI Journal, v.24, no.3, pp.211-220 |
10 |
원문
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