Journal
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2023 |
100-Gb/s/λ PAM-4 EAM-integrated DBR-LD Supporting Multiple Sub-Channels within 1.29 μm window
Kwon Oh Kee Journal of Lightwave Technology, v.41, no.18, pp.6015-6020 |
3 |
원문
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Journal
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2023 |
Electroabsorption modulator‐integrated distributed Bragg reflector laser diode for C‐band WDM‐based networks
Kwon Oh Kee ETRI Journal, v.45, no.1, pp.163-170 |
6 |
원문
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Journal
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2021 |
Monolithic Growth of GaAs Laser Diodes on Si(001) by Optimal AlAs Nucleation with Thermal Cycle Annealing
Young-Ho Ko Optical Materials Express, v.11, no.3, pp.943-951 |
7 |
원문
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Journal
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2021 |
16-channel Tunable and 25-Gb/s EAM-integrated DBR-LD for WDM-based Mobile Front-haul Networks
Kwon Oh Kee Optics Express, v.29, no.2, pp.1805-1812 |
9 |
원문
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Journal
|
2019 |
13-µm and 10-Gbps tunable DBR-LD for low-cost application of WDM-based mobile front haul networks
Oh Su Hwan Optics Express, v.27, no.20, pp.29241-29247 |
11 |
원문
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Conference
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2016 |
Device Characterization of the VCSEL-on-silicon as an on Chip Light Source
Kwack Myungjoon Silicon Photonics XI (SPIE 9752), v.9752, pp.1-6 |
1 |
원문
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Journal
|
2015 |
A Multi-Channel Etched-Mesa PBH DFB Laser Array Using an SAG Technique
Oh Su Hwan IEEE Photonics Technology Letters, v.27, no.24, pp.2567-2570 |
10 |
원문
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Journal
|
2015 |
Multi‐wavelength channel 1.5 μm and 10 Gb/s EMBH DFB‐LD array module using SAG technology
Kwon Oh Kee Electronics Letters, v.51, no.22, pp.1771-1772 |
2 |
원문
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Journal
|
2015 |
1.5-μm and 10-Gbs-1 Etched Mesa Buried Heterostructure DFB-LD for Datacenter Networks
Kwon Oh Kee Semiconductor Science and Technology, v.30, no.10, pp.1-7 |
10 |
원문
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Journal
|
2014 |
Directly Modulated Tunable External Cavity Laser Transmitter Optical Sub-Assembly
Yoon Ki-Hong IEEE Photonics Technology Letters, v.26, no.1, pp.47-49 |
8 |
원문
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Journal
|
2011 |
Fixed-Current Operation of a VCSEL Transmitter over a Temperature Range from -20°C to 80°C using an Elevated-Oxide-Layer Structure
Taeyong Kim IEEE/OSA Journal of Lightwave Technology, v.29, no.24, pp.3817-3823 |
0 |
원문
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Journal
|
2010 |
L-band tunable external cavity laser based on 158 μm superluminescent diode integrated with spot-size converter
Oh Su Hwan Optics Express, v.18, no.S3, pp.A300-A306 |
2 |
원문
|
Journal
|
2010 |
Performance of Hybrid Laser Diodes Consisting of Silicon Slab and InP/InGaAsP Deep-Ridge Waveguides
Leem Young Ahn ETRI Journal, v.32, no.2, pp.339-341 |
1 |
원문
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Journal
|
2009 |
Enhancement in the Gain of Quantum Dot Laser by Increasing Overlap Integral between Electron and Hole Wave-Functions
조병구 Thin Solid Films, v.517, no.14, pp.3983-3986 |
4 |
원문
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Journal
|
2008 |
High-Performance 1.55-μ m Superluminescent Diode With Butt-Coupled Spot-Size Converter
Oh Su Hwan IEEE Photonics Technology Letters, v.20, no.11, pp.894-896 |
12 |
원문
|
Journal
|
2008 |
Nonuniform Output Characteristics of Laser Diode with Wet-etched Spot-size Converter
Choe Joong-Seon Optics Express, v.16, no.8, pp.5790-5796 |
2 |
원문
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Conference
|
2007 |
Continuous Wave Operation of an Electrically Driven Spiral Microcavity InGaAsP/InP Laser Diodes
Jong-Hoi Kim IEEE Lasers and Electro-Optics Society (LEOS) Meeting 2007, pp.654-655 |
0 |
원문
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Journal
|
2007 |
Vertical stacks of shape-engineered InAs∕InAlGaAs quantum dot and its influences on the lasing characteristics
김진수 Applied Physics Letters, v.90, no.15, pp.1-3 |
19 |
원문
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Journal
|
2007 |
Selective-area MOVPE growth for 10Gbit/s electroabsorption modulator integrated with a tunable DBR laser
Kim Sung Bock Journal of Crystal Growth, v.298, pp.672-675 |
8 |
원문
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Journal
|
2006 |
Temperature, Current, and Voltage Dependences of Junction Failure in PIN Photodiodes
Park Sahnggi ETRI Journal, v.28, no.5, pp.555-560 |
3 |
원문
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Conference
|
2006 |
High-Performance Operations of Sampled Grating DBR Lasers with Optimized Butt-Coupling Method
Oh Su Hwan Passive Components and Fiber-based Devices III (APOC) 2006 (SPIE 6352), v.6352, pp.1-8 |
0 |
원문
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Journal
|
2006 |
A Four-Channel Laser Array with Four 10 Gbps Monolithic EAMs Each Integrated with a DBR Laser
Jae-Sik Sim ETRI Journal, v.28, no.4, pp.533-536 |
10 |
원문
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Journal
|
2006 |
Fabrication and characterization of a spot-size converter-integrated 1.3 µm FP laser diode
Chung Yong-Duck Semiconductor Science and Technology, v.21, no.6, pp.790-793 |
3 |
원문
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Conference
|
2006 |
Fabrication of 4-channel Monolithic Integrated with DBR Laser - Electroabsorption Modulator
Jae-Sik Sim 한국 반도체 학술 대회 (KCS) 2006, pp.1-2 |
|
|
Journal
|
2006 |
Self-Pulsation in Multisection Laser Diodes With a DFB Reflector
Young Ahn Leem IEEE Photonics Technology Letters, v.18, no.4, pp.622-624 |
15 |
원문
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Journal
|
2006 |
InAs-InAlGaAs Quantum Dot DFB Lasers Based on InP (001)
Jin Soo Kim IEEE Photonics Technology Letters, v.18, no.4, pp.595-597 |
24 |
원문
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Journal
|
2004 |
Room-temperature operation of InP-based InAs quantum dot laser
Jin Soo Kim IEEE Photonics Technology Letters, v.16, no.7, pp.1607-1609 |
71 |
원문
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Journal
|
2004 |
Fabrication of Deflector Integrated Laser Diodes and Light Deflection
Kim Kang Ho 광학회지, v.15, no.2, pp.171-176 |
|
|
Journal
|
2003 |
Fabrication of wavelength-tunable butt-coupled sampled grating DBR lasers using planar buried heterostructure
Oh Su Hwan IEEE Photonics Technology Letters, v.15, no.12, pp.1680-1682 |
16 |
원문
|
Journal
|
2003 |
Near room-temperature continuous-wave operation of all-monolithic InAlGaAs∕InP 1.3 [micro sign]m VCSELs
Jaeheon Shin Electronics Letters, v.39, no.8, pp.664-665 |
14 |
원문
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Journal
|
2003 |
1.55-μm spot-size converter integrated laser diode with conventional buried-heterostructure laser process
Sang-Wan Ryu IEEE Photonics Technology Letters, v.15, no.1, pp.12-14 |
13 |
원문
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Journal
|
2002 |
Asymmetric sampled grating laser array for a multiwavelength WDM source
Sang-Wan Ryu IEEE Photonics Technology Letters, v.14, no.12, pp.1656-1658 |
11 |
원문
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Journal
|
2002 |
Monolithic integration of a multiwavelength laser array associated with asymmetric sampled grating lasers
Sang-Wan Ryu IEEE Journal of Selected Topics in Quantum Electronics, v.8, no.6, pp.1358-1365 |
25 |
원문
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Journal
|
2002 |
CW operation and threshold characteristics of all-monolithic InAlGaAs 1.55-μm VCSELs grown by MOCVD
Jaeheon Shin IEEE Photonics Technology Letters, v.14, no.8, pp.1031-1033 |
49 |
원문
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Journal
|
2000 |
Pulse operation and threshold characteristics of 1.55-μm InAlGaAs-InAlAs VCSELs
Kwon O-Kyun IEEE Photonics Technology Letters, v.12, no.9, pp.1132-1134 |
7 |
원문
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