Journal
|
2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
|
Journal
|
2020 |
Electrically Stable Polymer-only Dielectrics for Organic Field-effect Transistors with Low Gate Leakage Current
Sooji Nam Organic Electronics, v.85, pp.1-5 |
14 |
원문
|
Journal
|
2019 |
Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect
황인태 Applied Sciences, v.9, no.17, pp.1-13 |
6 |
원문
|
Journal
|
2019 |
Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors
Sooji Nam Applied Sciences, v.9, no.1, pp.1-8 |
3 |
원문
|
Journal
|
2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
10 |
원문
|
Journal
|
2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET
Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684 |
5 |
원문
|
Journal
|
2015 |
Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7513-7517 |
4 |
원문
|
Journal
|
2015 |
Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process
Kim Jeong-Jin Japanese Journal of Applied Physics, v.54, no.3, pp.1-3 |
1 |
원문
|
Journal
|
2015 |
Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures
Soon-Won Jung ECS Solid State Letters, v.4, no.1, pp.P1-P3 |
33 |
원문
|
Journal
|
2013 |
Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters
Kang Jun Tae ETRI Journal, v.35, no.6, pp.1164-1167 |
18 |
원문
|
Journal
|
2013 |
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737 |
18 |
원문
|
Conference
|
2011 |
High-transmission Triode CNT Emitter on Metal Tip for Super-miniature X-ray Tube
Kang Jun Tae International Vacuum Nanoelectronics Conference (IVNC) 2011, pp.145-146 |
|
|
Journal
|
2011 |
“See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel
Yoon Sung Min Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 |
2 |
원문
|
Journal
|
2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
108 |
원문
|
Journal
|
2010 |
Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 |
31 |
원문
|
Journal
|
2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 |
32 |
원문
|
Journal
|
2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477 |
1 |
원문
|
Journal
|
2008 |
A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET
Chang-Geun Ahn Materials Science and Engineering B, v.147, no.2-3, pp.183-186 |
4 |
원문
|
Journal
|
2005 |
Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications
Bongki Mheen ETRI Journal, v.27, no.4, pp.439-445 |
8 |
원문
|
Journal
|
2004 |
표면처리에 의한 CNT의 효율적인 전자방출
Kwang Bok Kim Journal of Vacuum Science and Technology B, v.22, no.3, pp.1331-1334 |
48 |
원문
|
Journal
|
2003 |
Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor
Kyoung Jin Choi Journal of the Korean Physical Society, v.43, no.2, pp.253-258 |
8 |
|
Journal
|
2002 |
Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors
최경진 Japanese Journal of Applied Physics, v.41, no.5A, pp.2894-2899 |
7 |
원문
|