Subject

Subjects : gate leakage

  • Articles (22)
  • Patents (0)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2024 The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors   Junhyung Kim  ELECTRONICS, v.13, no.20, pp.1-8 0 원문
Journal 2020 Electrically Stable Polymer-only Dielectrics for Organic Field-effect Transistors with Low Gate Leakage Current   Sooji Nam  Organic Electronics, v.85, pp.1-5 14 원문
Journal 2019 Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect   황인태  Applied Sciences, v.9, no.17, pp.1-13 6 원문
Journal 2019 Graphene Oxide/Polystyrene Bilayer Gate Dielectrics for Low-Voltage Organic Field-Effect Transistors   Sooji Nam  Applied Sciences, v.9, no.1, pp.1-8 3 원문
Journal 2017 The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors   Jae Won Do  Thin Solid Films, v.628, pp.31-35 10 원문
Journal 2016 Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET   Hokyun Ahn  ETRI Journal, v.38, no.4, pp.675-684 5 원문
Journal 2015 Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates   Soon-Won Jung  Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7513-7517 4 원문
Journal 2015 Al2O3 Surface Passivation and MOS-Gate Fabrication on AlGaN/GaN High-Electron-Mobility Transistors without Al2O3 Etching Process   Kim Jeong-Jin  Japanese Journal of Applied Physics, v.54, no.3, pp.1-3 1 원문
Journal 2015 Stretchable Organic Thin-Film Transistors Fabricated on Elastomer Substrates Using Polyimide Stiff-Island Structures   Soon-Won Jung  ECS Solid State Letters, v.4, no.1, pp.P1-P3 33 원문
Journal 2013 Analysis of Failure in Miniature X‐ray Tubes with Gated Carbon Nanotube Field Emitters   Kang Jun Tae  ETRI Journal, v.35, no.6, pp.1164-1167 18 원문
Journal 2013 Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor   Soon-Won Jung  ETRI Journal, v.35, no.4, pp.734-737 18 원문
Conference 2011 High-transmission Triode CNT Emitter on Metal Tip for Super-miniature X-ray Tube   Kang Jun Tae  International Vacuum Nanoelectronics Conference (IVNC) 2011, pp.145-146
Journal 2011 “See-Through” Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel   Yoon Sung Min  Journal of the Korean Physical Society, v.58, no.5, pp.1494-1499 2 원문
Journal 2010 Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C   Yoon Sung Min  Advanced Functional Materials, v.20, no.6, pp.921-926 108 원문
Journal 2010 Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer   Soon-Won Jung  Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 31 원문
Journal 2009 Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer   Yoon Sung Min  Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 32 원문
Journal 2009 Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors   Cheong Woo-Seok  Journal of the Korean Physical Society, v.54, no.1, pp.473-477 1 원문
Journal 2008 A Two-step Annealing Process for Ni Silicide Formation in an Ultra-thin Body RF SOI MOSFET   Chang-Geun Ahn  Materials Science and Engineering B, v.147, no.2-3, pp.183-186 4 원문
Journal 2005 Strained-SiGe Complementary MOSFETs Adopting Different Thickness of Silicon Cap Layers for Low Power and High Performance Applications   Bongki Mheen  ETRI Journal, v.27, no.4, pp.439-445 8 원문
Journal 2004 표면처리에 의한 CNT의 효율적인 전자방출   Kwang Bok Kim  Journal of Vacuum Science and Technology B, v.22, no.3, pp.1331-1334 48 원문
Journal 2003 Au/Ge/Ni/Au and Pd/Ge/Ti/Au Ohmic Contacts to AlxGa1-xAs/InGaAs (x = 0.75) Pseudomorphic High Electron Mobility Transistor   Kyoung Jin Choi  Journal of the Korean Physical Society, v.43, no.2, pp.253-258 8
Journal 2002 Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors   최경진  Japanese Journal of Applied Physics, v.41, no.5A, pp.2894-2899 7 원문
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