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Journal
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2016 |
InGaZnO-Based Stretchable Ferroelectric Memory Transistor Using Patterned Polyimide/Polydimethylsiloxane Hybrid Substrate
Na Bock Soon Journal of Nanoscience and Nanotechnology, v.16, no.10, pp.10280-10283 |
6 |
원문
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Journal
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2016 |
Oxide Semiconductor-Based Flexible Organic/Inorganic Hybrid Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.16, no.3, pp.2752-2755 |
14 |
원문
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Journal
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
김경아 IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 |
5 |
원문
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Journal
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2016 |
Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption
Byun Chunwon IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401 |
5 |
원문
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Journal
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2015 |
Flexible Organic Thin-Film Transistors Fabricated on Polydimethylsiloxane Elastomer Substrates
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7513-7517 |
4 |
원문
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Journal
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2015 |
Fabrication of Stretchable Organic–Inorganic Hybrid Thin-Film Transistors on Polyimide Stiff-Island Structures
Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.7526-7530 |
9 |
원문
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Journal
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2015 |
Flexible Nonvolatile Memory Transistors using Indium Gallium Zinc Oxide-channel and Ferroelectric Polymer Poly(Vinylidene Fluoride-co-Trifluoroethylene) Fabricated on Elastomer Substrate
Soon-Won Jung Journal of Vacuum Science and Technology B, v.33, no.5, pp.1-4 |
18 |
원문
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Journal
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2015 |
Enhanced Separator Properties by Coating Alumina Nanoparticles with Poly(2-Acrylamido-2-Methyl-1-Propanesulfonic Acid) Binder for Lithium-Ion batteries
Kim Kwang Man Korean Journal of Chemical Engineering, v.32, no.4, pp.717-722 |
18 |
원문
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Journal
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2014 |
Enhanced Separator Properties by Thermal Curing of Poly(Ethylene Glycol)Diacrylate-Based Gel Polymer Electrolytes for Lithium-Ion Batteries
Kim Kwang Man Electrochimica Acta, v.120, pp.159-166 |
21 |
원문
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Journal
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2013 |
Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator
박준용 Organic Electronics, v.14, no.9, pp.2148-2157 |
7 |
원문
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Journal
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2013 |
Nonvolatile Ferroelectric P(VDF-TrFE) Memory Transistors Based on Inkjet-Printed Organic Semiconductor
Soon-Won Jung ETRI Journal, v.35, no.4, pp.734-737 |
18 |
원문
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Journal
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2013 |
Separator Properties of Silk-Woven Fabrics Coated with PVdF-HFP and Silica and the Charge-Discharge Characteristics of Lithium-ion Batteries Adopting Them
오심건 화학공학, v.51, no.3, pp.330-334 |
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원문
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Conference
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2012 |
Characteristics of ferroelectric poly(vinylidene fluoride-trifluoroethylene) thin film transistors fabricated on flexible polyethylene naphthalate substrate
International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1 |
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Journal
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2011 |
Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor
Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142 |
21 |
원문
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Journal
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2011 |
Bending Characteristics of Ferroelectric Poly(Vinylidene Fluoride Trifluoroethylene) Capacitors Fabricated on Flexible Polyethylene Naphthalate Substrate
Yoon Sung Min Current Applied Physics, v.11, no.3 SUPPL., pp.S219-S224 |
15 |
원문
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Journal
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2011 |
Low-voltage-operated Top-gate Polymer Thin-film Transistors with High-capacitance P(VDF-TrFE)/PVDF-blended Dielectrics
Soon-Won Jung Current Applied Physics, v.11, no.3 Suppl., pp.S213-S218 |
44 |
원문
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Journal
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2011 |
Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array
Kim Byeonghoon IEEE Electron Device Letters, v.32, no.3, pp.324-326 |
29 |
원문
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Journal
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2010 |
Low-Voltage-Operated Top-Gate Polymer Thin-Film Transistors with high Capacitance Poly(Vinylidene Fluoride-Trifluoroethylene)/Poly(Methyl Methacrylate) Dielectrics
Soon-Won Jung Journal of Applied Physics, v.108, no.10 |
45 |
원문
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Journal
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2010 |
Nonvolatile memory transistors using solution-processed zinc–tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene)
Yoon Sung Min Organic Electronics, v.11, no.11, pp.1746-1752 |
18 |
원문
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Journal
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2010 |
Nonvolatile Memory Thin Film Transistors Using Spin-Coated Amorphous Zinc Indium Oxide Channel and Ferroelectric Copolymer
Yoon Sung Min Journal of the Electrochemical Society, v.157, no.7, pp.H771-H778 |
3 |
원문
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Journal
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2010 |
Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors
Yoon Sung Min Japanese Journal of Applied Physics, v.49, no.4 PART 2, pp.1-6 |
20 |
원문
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Journal
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2010 |
Fully Transparent Non‐volatile Memory Thin‐Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 °C
Yoon Sung Min Advanced Functional Materials, v.20, no.6, pp.921-926 |
108 |
원문
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Journal
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2010 |
Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell
Yoon Sung Min IEEE Electron Device Letters, v.31, no.2, pp.138-140 |
14 |
원문
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Journal
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2010 |
Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator
Yoon Sung Min Electrochemical and Solid-State Letters, v.13, no.5, pp.H141-H143 |
17 |
원문
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Conference
|
2010 |
Fabrication and Characterization of “See-Through” Nonvolatile Memory Transistors Using Ferroelectric Poly(vinylidene fluoride-trifluoroethylene) and Transparent Oxide Semiconductor
윤성민 한국 반도체 학술 대회 (KCS) 2010, pp.61-62 |
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Journal
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2010 |
Top-Gate Ferroelectric Thin-Film-Transistors with P(VDF-TrFE) Copolymer
Soon-Won Jung Current Applied Physics, v.10, no.1 SUPPL., pp.e58-e61 |
31 |
원문
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Journal
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2009 |
Effects of ZnO Channel Thickness on the Device Behaviour of Nonvoltile Memory Thin Film Transistor with Double-layered Gate Insulators of Al2O3 and Ferroelectric Polymer
Yoon Sung Min Journal of Physics D : Applied Physics, v.42, no.24, pp.1-6 |
32 |
원문
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Journal
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2009 |
Effects of Chemical Treatments on the Electrical Behaviors of Ferroelectric Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer for Nonvolatile Memory Device Applications
Yoon Sung Min Japanese Journal of Applied Physics, v.48, no.9, pp.1-4 |
3 |
원문
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Journal
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2009 |
Low Voltage Operation of Nonvolatile Ferroelectric Capacitors Using Poly(Vinylidene Fluoride-Trifluoroethylene) Copolymer and Thin Al2O3 Insulating Layer
Soon-Won Jung Electrochemical and Solid-State Letters, v.12, no.9, pp.H325-H328 |
12 |
원문
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Journal
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2007 |
Physical and Electrochemical Properties of PVdF-HFP/SiO2-Based Polymer Electrolytes Prepared Using Dimethyl Acetamide Solvent and Water Non-Solvent
Kim Kwang Man Macromolecular Materials and Engineering, v.208, no.8, pp.877-895 |
14 |
원문
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Journal
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2006 |
Physical and Electrochemical Characterizations of Poly(Vinylidene Fluoride-Co-Hexafluoropropylene)/SiO2- Based Polymer Electrolytes Prepared by the PhaseInversion Technique
Kim Kwang Man Journal of Applied Polymer Science, v.102, no.1, pp.140-148 |
16 |
원문
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Journal
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2006 |
Characteristics of PVdF-HFP/TiO2 Composite Membrane Electrolytes Prepared by Phase Inversion and Conventional Casting Methods
Kim Kwang Man Electrochimica Acta, v.51, no.26, pp.5636-5644 |
218 |
원문
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Journal
|
2006 |
Effect of TiO2 Inclusion in the Poly(Vinylidene Fluoride-Co-Hexafluoropropylene)-Based Polymer Electrolyte of Dye-Sensitized Solar Cell
Kim Kwang Man Bulletin of the Korean Chemical Society, v.27, no.2, pp.322-324 |
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