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Conference
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2022 |
Comparison of Characterization of IGBT, SiC MOSFET, and MCT for a Pre-charge Switch in Electric Vehicles
Jung Dong Yun 대한전자공학회 학술 대회 (하계) 2022, pp.1613-1616 |
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Journal
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2021 |
Issues on Monolithic 3D Integration Techniques for Realizing Next Generation Intelligent Devices
Jaehyun Moon 전자통신동향분석, v.36, no.3, pp.12-22 |
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원문
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Conference
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2020 |
1700 V Full-SiC Half-bridge Power Module with Low Switching Loss
Jung Dong Yun Electronic System-Integration Technology Conference (ESTC) 2020, pp.1-4 |
1 |
원문
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Journal
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2019 |
2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 |
118 |
원문
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Journal
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2016 |
High-Current Trench Gate DMOSFET Incorporating Current Sensing FET for Motor Driver Applications
Kim Sang Gi Transactions on Electrical and Electronic Materials, v.17, no.5, pp.301-304 |
0 |
원문
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Journal
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2015 |
Power Trench Gate MOSFET with an Integrated 6-Pack Configuration for a 3-Phase Inverter
Won Jong Il Journal of the Korean Physical Society, v.67, no.7, pp.1214-1221 |
2 |
원문
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Journal
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2012 |
A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556 |
2 |
원문
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Journal
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2011 |
Characteristics of Schottky Barrier Silicon Nanocluster Floating Gate Flash Memory
손대호 Thin Solid Films, v.519, no.18, pp.6174-6177 |
0 |
원문
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Journal
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2011 |
High Performance Platinum-Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Scaled Down to 30 nm
Jun Myungsim Journal of Vacuum Science and Technology B, v.29, no.3, pp.1-4 |
1 |
원문
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Journal
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2010 |
High-Density Nano-Scale N-Channel Trench-Gated MOSFETs Using the Self-Aligned Technique
Kim Sang Gi Journal of the Korean Physical Society, v.57, no.4, pp.802-805 |
3 |
원문
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Journal
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2010 |
Effective Mobility Characteristics of Platinum-Silicided p-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistor
Jang Moon Gyu Journal of Vacuum Science and Technology B, v.28, no.4, pp.799-801 |
6 |
원문
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Journal
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2009 |
Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique
문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624 |
6 |
원문
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Journal
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2008 |
20-nm-gate-length Erbium-/platinum-silicided n-/p-type Schottky Barrier Metal-oxide-semiconductor Field-effect Transistors
Jang Moon Gyu Applied Physics Letters, v.93, no.19, pp.1-3 |
11 |
원문
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Journal
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2007 |
Effects of Metal Silicide/Silicon Interface Trap Distribution on Schottky Barrier MOSFET Devices
조원주 Journal of the Korean Physical Society, v.51, pp.S313-S317 |
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Journal
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2006 |
A New Strained-Si Channel High Voltage MOSFET for High Performance Power Applications
Cho Young Kyun ETRI Journal, v.28, no.2, pp.253-256 |
10 |
원문
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Journal
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2006 |
Formation of a Self-Aligned Hard Mask using Hydrogen Silsesquioxane
Kiju Im Applied Physics Letters, v.88, no.15, pp.1-3 |
3 |
원문
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Journal
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2006 |
Ambipolar Carrier Injection Characteristics of Erbium-Silicided n-Type Schottky Barrier Metal–Oxide–Semiconductor Field-Effect Transistors
Jang Moon Gyu Japanese Journal of Applied Physics, v.45, no.2A, pp.730-732 |
32 |
원문
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Journal
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2002 |
High Transconductance Modulation-doped SiGe pMOSFETs by RPCVD
Young Joo Song Electronics Letters, v.38, no.23, pp.1479-1480 |
3 |
원문
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