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Journal
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2024 |
Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer
Choi Kyunghee ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466 |
2 |
원문
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Journal
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2019 |
The new route for realization of 1‐μm‐pixel‐pitch high‐resolution displays
Ji Hun Choi Journal of the Society for Information Display, v.27, no.8, pp.487-496 |
19 |
원문
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Conference
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2019 |
The New Route for Realization of 1μm-pixel-pitch High Resolution Displays
Ji Hun Choi Society for Information Display (SID) International Symposium 2019, pp.319-321 |
7 |
원문
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Journal
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2017 |
1- $\mu \text{m}$ Short-Channel Oxide Thin-Film Transistors With Triangular Gate Spacer
Ji Hun Choi IEEE Electron Device Letters, v.38, no.10, pp.1398-1400 |
13 |
원문
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Journal
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2017 |
Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186 |
1 |
원문
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Journal
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2016 |
InZnO/AlSnZnInO Bilayer Oxide Thin-Film Transistors With High Mobility and High Uniformity
Ji Hun Choi IEEE Electron Device Letters, v.37, no.10, pp.1295-1298 |
36 |
원문
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Conference
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2015 |
Double-Channel InZnO/AlSnZnInO Thin-Film Transistors with Ultra High Mobility
Choi Ji Hoon International Display Workshops (IDW) 2015, pp.189-190 |
1 |
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2011 |
Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance
Yang Shinhyuk IEEE Electron Device Letters, v.32, no.12, pp.1692-1694 |
60 |
원문
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Journal
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2011 |
Water-Related Abnormal Instability of Transparent Oxide/Organic Hybrid Thin Film Transistors
Yang Shinhyuk Applied Physics Letters, v.98, no.10, pp.1-3 |
30 |
원문
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Journal
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2009 |
Comparative Study of Electrical Instabilities in Top-Gate InGaZnO thin Film Transistors with Al2O3 and Al2O3/SiNx Gate Dielectrics
이정민 Applied Physics Letters, v.94, no.22, pp.1-4 |
109 |
원문
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Conference
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2009 |
Protective Layer on Active Layer of Al-Zn-Sn-O Thin Film Transistors for Transparent AMOLED
Cho Doo-Hee International Meeting on Information Display (IMID) 2009, pp.318-321 |
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Journal
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2009 |
Fabrication of n-type Schottky barrier thin-film transistor with channel length and width of 0.1 μm and erbium silicide source/drain
Yang Jong-Heon Thin Solid Films, v.517, no.5, pp.1825-1828 |
5 |
원문
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Journal
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2007 |
Characteristics of Pentacene Thin Film Transistor with Al2O3 Gate Dielectrics on Plastic Substrate
Lim Jungwook Electrochemical and Solid-State Letters, v.10, no.10, pp.J36-J38 |
8 |
원문
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Journal
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2006 |
A New Strained-Si Channel High Voltage MOSFET for High Performance Power Applications
Cho Young Kyun ETRI Journal, v.28, no.2, pp.253-256 |
10 |
원문
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Journal
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2006 |
The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.2-4, pp.99-103 |
38 |
원문
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Conference
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2005 |
Fabrication of High Performance Low Temperature Poly-Si(LTPS) on Flexible Metal Foil
Park Dong Jin International Display Workshops in Conjunction with Asia Display (IDW/AD) 2005, pp.1-4 |
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Journal
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2005 |
30-nm recessed S/D SOI MOSFET with an ultrathin body and a low SDE resistance
Chang-Geun Ahn IEEE Electron Device Letters, v.26, no.7, pp.486-488 |
16 |
원문
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