|
Journal
|
2025 |
An X-band Low-Noise Amplifier Monolithic Microwave Integrated Circuit with Sub-2 dB Noise Figure Using 0.2 𝜇m Gallium Nitride-on-Silicon Carbide Process
Lee Sang-Heung Applied Science and Convergence Technology, v.34, no.1, pp.42-45 |
0 |
원문
|
|
Journal
|
2024 |
The Impact of Gate Annealing on Leakage Current and Radio Frequency Efficiency in AlGaN/GaN High-Electron-Mobility Transistors
Junhyung Kim ELECTRONICS, v.13, no.20, pp.1-8 |
0 |
원문
|
|
Journal
|
2024 |
X‐band quasi class‐F HPA MMIC using DynaFET GaN HEMT modelling
Junhyung Jeong Electronics Letters, v.60, no.10, pp.1-3 |
1 |
원문
|
|
Conference
|
2023 |
Ku-Band 35W Power Amplifier MMIC Using 0.15 µm GaN HEMT Technology
Youn Sub Noh PhotonIcs and Electromagnetics Research Symposium (PIERS) 2023, pp.794-797 |
2 |
원문
|
|
Journal
|
2023 |
25–31 GHz GaN-Based LNA MMIC Employing Hybrid-Matching Topology for 5G Base Station Applications
안현배 IEEE Microwave and Wireless Technology Letters, v.33, no.1, pp.47-50 |
15 |
원문
|
|
Conference
|
2022 |
Ka-Band GaN Power Amplifier MMICs using Source Inductor and Second Harmonic Termination
Ju In Kwon Joint Conference on Satellite Communications (JC-SAT) 2022, pp.1-4 |
|
|
|
Journal
|
2021 |
Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication
Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64 |
|
원문
|
|
Journal
|
2020 |
Application of Aluminum Flat Heat Pipe for Dry Cooling near the Hot Spot of a Radar Array with a Multiscale Structure
Moon Seok-Hwan Applied Thermal Engineering, v.169, pp.1-9 |
22 |
원문
|
|
Journal
|
2019 |
Technical Trends in Next-Generation GaN RF Power Devices and Integrated Circuits
Lee Sang-Heung 전자통신동향분석, v.34, no.5, pp.71-80 |
|
원문
|
|
Journal
|
2018 |
Technical Trends of Semiconductors for Harsh Environments
Woojin Chang 전자통신동향분석, v.33, no.6, pp.12-23 |
|
원문
|
|
Journal
|
2016 |
A Linear GaN High Power Amplifier MMIC for Ka-Band Satellite Communications
Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.26, no.8, pp.619-621 |
49 |
원문
|
|
Journal
|
2016 |
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
Woojin Chang ETRI Journal, v.38, no.1, pp.133-140 |
8 |
원문
|
|
Journal
|
2016 |
Electrically Driven, Phosphor-Free, White Light-Emitting Diodes using Gallium Nitride-based Double Concentric Truncated Pyramid Structures
임승혁 Light : Science and Applications, v.5, pp.1-6 |
90 |
원문
|
|
Conference
|
2015 |
Fully Integrated Wideband Power Amplifier in GaN Technology
Park Bong Hyuk Asia-Pacific Microwave Conference (APMC) 2015, pp.1-3 |
0 |
원문
|
|
Conference
|
2015 |
Ka-band GaN Power Amplifier MMIC Chipset for Satellite and 5G Cellular Communications
Youn Sub Noh Asia-Pacific Conference on Antennas and Propagation (APCAP) 2015, pp.482-485 |
23 |
원문
|
|
Journal
|
2015 |
Highly Integrated C-Band GaN High Power Amplifier MMIC for Phased Array Applications
Youn Sub Noh IEEE Microwave and Wireless Components Letters, v.25, no.6, pp.406-408 |
23 |
원문
|
|
Journal
|
2014 |
Technical Trends of Next-Generation GaN Power Amplifier for High-Frequency and High-Power
Lee Sang-Heung 전자통신동향분석, v.29, no.6, pp.1-13 |
|
원문
|
|
Journal
|
2014 |
Trends in Wide Band-Gap Semiconductor Power Devices for Automotive, Power Conversion Modules and ETRI GaN Power Technology
Sang Choon Ko 전자통신동향분석, v.29, no.6, pp.53-62 |
|
원문
|
|
Journal
|
2014 |
Ku‐band GaN HPA MMIC with high‐power and high‐PAE performances
Youn Sub Noh Electronics Letters, v.50, no.19, pp.1361-1363 |
9 |
원문
|
|
Journal
|
2012 |
Characteristics of NiO–AZO thin films deposited by magnetron co-sputtering in an O2 atmosphere
H.W. Park Materials Letters, v.74, pp.30-32 |
13 |
원문
|
|
Journal
|
2012 |
Next Generation Energy Efficient Semiconductors : Status of R&D of GaN Power Devices
Mun Jae Kyoung 전자통신동향분석, v.27, no.4, pp.96-106 |
|
원문
|
|
Conference
|
2012 |
Highly Efficient Doherty Amplifier with Peaking Cell Controlled Using Optimized Shaped Gate Voltage
김준형 International Microwave Symposium (IMS) 2012, pp.1-3 |
1 |
원문
|