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Journal
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2024 |
Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications
Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102 |
2 |
원문
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Conference
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2024 |
0.15 ㎛ GaN HPA MMIC for 6G Upper-mid Band
Junhyung Jeong International Conference on Information and Communication Technology Convergence (ICTC) 2024, pp.1456-1457 |
0 |
원문
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Journal
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2021 |
Van der Waals Heterostructure of Hexagonal Boron Nitride with an AlGaN/GaN Epitaxial Wafer for High-Performance Radio Frequency Applications
문석호 ACS Applied Materials & Interfaces, v.13, no.49, pp.58253-59592 |
13 |
원문
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Journal
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2021 |
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Sungjae Chang Crystals, v.11, no.11, pp.1-10 |
6 |
원문
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Journal
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2021 |
Thermal Behavior of an AlGaN/GaN-based Schottky Barrier Diode on Diamond and Silicon Substrates
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.21, no.8, pp.4429-4435 |
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원문
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Journal
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2020 |
W‐Band MMIC chipset in 0.1‐μm mHEMT technology
Jongmin Lee ETRI Journal, v.42, no.4, pp.549-561 |
6 |
원문
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
7 |
원문
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Journal
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2016 |
Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate
Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410 |
28 |
원문
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Journal
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2015 |
DC and RF Characteristics of AlGaN/GaN HEMTs on SiC with Gate Recessed by Using ICP Etching of BCl3/Cl2
Hyung Sup Yoon Journal of the Korean Physical Society, v.67, no.4, pp.654-657 |
3 |
원문
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Journal
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2013 |
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
Jong-Won Lim Thin Solid Films, v.547, pp.106-110 |
10 |
원문
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Journal
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2009 |
Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems
Jongmin Lee ETRI Journal, v.31, no.6, pp.749-754 |
3 |
원문
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Journal
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2007 |
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Jongmin Lee Journal of the Korean Physical Society, v.50, no.3, pp.871-874 |
2 |
원문
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Journal
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim Journal of the Korean Physical Society, v.49, no.3, pp.S774-S779 |
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Journal
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2006 |
Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206 |
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Journal
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2006 |
Comparative Study of DC and Microwave Characteristics of 0.12 µm Double-Recessed Gate AlGaAs/InGaAs/GaAs Pseudomorphic High-Electron-Mobility Transistors Using Dielectric-Assisted Process
Jong-Won Lim Japanese Journal of Applied Physics, v.45, no.4B, pp.3358-3363 |
0 |
원문
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Journal
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2006 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Lee Seung-Yun Solid-State Electronics, v.50, no.3, pp.333-339 |
4 |
원문
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Conference
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2006 |
Fabrication and Characteristics of 0.12 μm Single and Double-Recessed Gate AlGaAs/InGaAs/GaAs PHEMTs Using a SiNx Pre-Passivation Layer
Jong-Won Lim 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Conference
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2005 |
A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness
Kim Yong Won Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
0 |
원문
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Journal
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2005 |
An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator
김영기 ETRI Journal, v.27, no.1, pp.75-80 |
5 |
원문
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Conference
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2002 |
RF performance tradeoffs of SiGe HBT fabricated by reduced pressure chemical vapor deposition
Bongki Mheen International Microwave Symposium (IMS) 2002, pp.413-416 |
3 |
원문
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