Subject

Subjects : Phase Change Material (PCM)

  • Articles (45)
  • Patents (5)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2025 Electrical properties and conduction mechanisms of ε-GaSe films for selector and phase-change memory applications   Lim Soyoung  Applied Surface Science, v.682, pp.1-8 1 원문
Conference 2023 Demonstration of an ultracompact optical waveguide switch integrated with a phase change material based on an inverse design method   Yonghan Kim  International Nanotech Symposium & Exhibition (NANO KOREA) 2023, pp.1-1
Journal 2022 Multilevel Absorbers via the Integration of Undoped and Tungsten-Doped Multilayered Vanadium Dioxide Thin Films   Trevon Badloe  ACS Applied Materials & Interfaces, v.14, no.1, pp.1404-1412 21 원문
Journal 2022 Multilevel Absorbers via the Integration of Undoped and Tungsten-Doped Multilayered Vanadium Dioxide Thin Films   고병수  ACS Applied Materials & Interfaces, v.14, no.1, pp.1404-1412 21 원문
Journal 2022 Multilevel Absorbers via the Integration of Undoped and Tungsten-Doped Multilayered Vanadium Dioxide Thin Films   채지연  ACS Applied Materials & Interfaces, v.14, no.1, pp.1404-1412 21 원문
Journal 2021 Reconfigurable, vivid reflective colors based on solution-processed Fabry–Perot absorber using thermochromic vanadium dioxide   Kim Soojung  Applied Surface Science, v.565, pp.1-8 22 원문
Journal 2020 Employing Vanadium Dioxide Nanoparticles for Flexible Metasurfaces with Switchable Absorption Properties at Near-infrared Frequencies   Trevon Badloe  Journal of Optics, v.22, no.11, pp.1-7 27 원문
Journal 2020 Employing Vanadium Dioxide Nanoparticles for Flexible Metasurfaces with Switchable Absorption Properties at Near-infrared Frequencies   Ko Byoung Su  Journal of Optics, v.22, no.11, pp.1-7 27 원문
Journal 2020 Self‐Organized Gold Network–Vanadium Dioxide Hybrid Film for Dynamic Modulation of Visible‐to‐Near‐Infrared Light   인성준  Advanced Photonics Research, v.1, no.1, pp.1-9 원문
Journal 2019 Crafting a 1.5 μm Pixel Pitch Spatial Light Modulator using Ge2Sb2Te5 Phase Change Material   Kim Yong Hae  Journal of the Optical Society of America A, v.36, no.12, pp.23-30 8 원문
Conference 2019 Towards 1.5 Micrometer Pixel Pitch Holographic Display using Ge2Sb2Te5 Phase Change Material   Kim Yong Hae  Digital Holography and Three-Dimensional Imaging (DH) 2019, pp.1-2 2 원문
Journal 2018 Rewritable Full-color Computer-generated Holograms based on Color-selective Diffractive Optical Components including Phase-change Materials   Hwang Chi-Young  Nanoscale, v.10, no.46, pp.21537-22068 29 원문
Journal 2018 Improvement in Cyclic Operation of Unit Pixel Device using Sb-excess Ge2Sb2Te5 Thin Films for Hologram Image Implementation   Hanbyeol Kang  Japanese Journal of Applied Physics, v.57, no.8, pp.1-6 5 원문
Conference 2018 Development of spatial light modulator with ultra fine pixel pitch for electronic holography (Conference Presentation)   Hwang Chi-Sun  SPIE Commercial + Scientific Sensing and Imaging 2018 (SPIE 10666), pp.1-1 원문
Journal 2017 Switchable Subwavelength Plasmonic Structures with Phase-Change Materials for Reflection-Type Active Metasurfaces in the Visible Region   Hwang Chi-Young  Applied Physics Express, v.10, no.12, pp.1-4 6 원문
Journal 2017 Design Method of Tunable Pixel with Phase-Change Material for Diffractive Optical Elements   이승열  ETRI Journal, v.39, no.3, pp.390-397 10 원문
Journal 2017 Holographic Image Generation with a Thin-Film Resonance caused by Chalcogenide Phase-change Material   Lee Seung Youl  Scientific Reports, v.7, pp.1-8 72 원문
Conference 2016 Digital Holography using a Thermally Driven Phase-change Material   Lee Seung Youl  International Meeting on Information Display (IMID) 2016, pp.323-323
Journal 2011 Self-Aligned Formation of Nanoscale Phase Change Materials for Nonvolatile Memory Application   이승윤  Japanese Journal of Applied Physics, v.50, no.6 PART 2, pp.1-5 0 원문
Journal 2010 Phase-Change Memory Device Fabricated Using Solid-State Alloying   이승윤  Electronics Letters, v.46, no.9, pp.652-654 5 원문
Conference 2009 CMOS Compatible Phase-Change Memory Device for Low Power Consumption   Park Young Sam  International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS) 2009, pp.1-2
Journal 2009 Improvement of operational stability in SET states of phase-change-type nonvolatile memory devices using Sb-rich phase of Ge–Sb–Te alloys   Yoon Sung Min  Solid-State Electronics, v.53, no.5, pp.557-561 6 원문
Journal 2009 Enhanced Memory Behavior in Phase-Change Nonvolatile-Memory Devices Using Multilayered Structure of Compositionally Modified Ge–Sb–Te Films   Yoon Sung Min  Japanese Journal of Applied Physics, v.48, no.4, pp.1-6 2 원문
Journal 2009 Phase-Change-Driven Programmable Switch for Nonvolatile Logic Applications   Yoon Sung Min  IEEE Electron Device Letters, v.30, no.4, pp.371-373 16 원문
Journal 2009 Control of the Thickness and Length of Germanium-Telluride Nanowires Via the Vapor-Liquid-Solid Method   Jung Soonwon  Journal of the Korean Physical Society, v.54, no.2, pp.653-659 6 원문
Journal 2008 Fabrication and Electrical Characterization of Phase-change Memory Devices with Nanoscale Self-heating-channel Structures   Yoon Sung Min  Microelectronic Engineering, v.85, no.12, pp.2334-2337 11 원문
Journal 2008 Process compatible silicon–germanium–antimony heating layer for high density phase-change memory applications   Lee Seung-Yun  Microelectronic Engineering, v.85, no.12, pp.2342-2345 5 원문
Journal 2008 Stress Reduction of Ge<SUB>2</SUB>Sb<SUB>2</SUB>Te<SUB>5</SUB> by Inhibiting Oxygen Diffusion   Park Young Sam  Materials Transactions, v.49, no.9, pp.2107-2111 1 원문
Journal 2008 Chalcogenide Thin-Film Transistors using Oxygenated n-type and p-type Phase Change Materials   Song Kibong  Applied Physics Letters, v.93, no.4, pp.1-3 25 원문
Journal 2008 Nonvolatile Memory-Switching Behaviors of Phase-Change Memory Devices Using Ti-Si-N Heating Layers   Yoon Sung Min  Journal of the Electrochemical Society, v.155, no.6, pp.H421-H425
Journal 2008 Bilayer Heater Electrode for Improving Reliability of Phase-Change Memory Devices   Lee Seung-Yun  Journal of the Electrochemical Society, v.115, no.5, pp.H314-H318 7 원문
Conference 2008 Phase-Change Memory Devices Employing SiGe Heating Layers   Lee Seung-Yun  한국 반도체 학술 대회 (KCS) 2008, pp.33-34
Journal 2007 Electrical Characterization of Nonvolatile Phase-Change Memory Devices Using Sb-Rich Ge–Sb–Te Alloy Films   Yoon Sung Min  Japanese Journal of Applied Physics, v.46, no.11, pp.7225-7231 17 원문
Journal 2007 Nanoscale Observations of the Operational Failure for Phase-change-type Nonvolatile Memory Devices using Ge2Sb2Te5 Chalcogenide Thin Films   Yoon Sung Min  Applied Surface Science, v.254, no.1, pp.316-320 50 원문
Journal 2007 Time Dependent Resistance Change of Amorphous Phase in Phase-Change Nonvolatile Memories   Yoon Sung Min  Integrated Ferroelectrics, v.93, no.1, pp.83-89 2 원문
Journal 2007 Stress Reduction of Ge2Sb2Te5 Crystallization by Capping Al2O3 Film Grown by PEALD   Park Young Sam  ECS Transactions, v.11, no.7, pp.245-248 2 원문
Journal 2007 Effects of Barrier Layers on the Electrical Behaviors of Phase-Change Memory Devices Using Sb-rich Ge-Sb-Te Films   Yoon Sung Min  Integrated Ferroelectrics, v.93, no.1, pp.75-82 4 원문
Journal 2007 Low Power and High Speed Phase-change Memory Devices with Silicon-germanium Heating Layers   Lee Seung-Yun  Journal of Vacuum Science and Technology B, v.25, no.4, pp.1244-1248 16 원문
Journal 2007 Nanoscale Observations on the Degradation Phenomena of Phase-Change Nonvolatile Memory Devices Using Ge2Sb2Te5   Yoon Sung Min  Japanese Journal of Applied Physics, v.46, no.4, pp.L99-L102 18 원문
Journal 2006 Sb-Se-Based Phase-Change Memory Device With Lower Power and Higher Speed Operations   Yoon Sung Min  IEEE Electron Device Letters, v.27, no.6, pp.445-447 112 원문
Conference 2006 Phase Change Memory Device with U-shaped Heater (PCM-U)   Park Young Sam  European Phase Change and Ovonic Symposium (EPCOS) 2006, pp.1-4
Journal 2006 Writing Current Reduction in Phase Change Memory Device with U-Shaped Heater (PCM-U)   Park Young Sam  Japanese Journal of Applied Physics, v.45, no.20, pp.516-518 16 원문
Conference 2006 Stack-Structured Phase Change Memory Cell for Multi-State Storage   Ryu Sangouk  Materials Research Society 2006 (Spring), pp.1-1
Conference 2005 Research and Development on Next-Generation Nonvolatile Memory in ETRI   Byoung Gon Yu  Symposium on Semiconductors and Integrated Circuits Technology, pp.1-4
Journal 2005 Etching Characteristics of Ge2Sb2Te5 Using High-Density Helicon Plasma for the Nonvolatile Phase-Change Memory Applications   Yoon Sung Min  Japanese Journal of Applied Physics, v.44, no.24-27, pp.L869-L872 36 원문
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2006 Phase change memory devices with micro laser injector UNITED STATES
Registered 2009 PHASE-CHANGE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME UNITED STATES
Registered 2008 APPARATUS AND METHOD FOR WRITING DATA TO PHASE-CHANGE MEMORY BY USING POWER CALCULATION AND DATA INVERSION UNITED STATES
Registered 2009 PROGRAMMABLE LOGIC BLOCK OF FPGA USING PHASE-CHANGE MEMORY DEVICE UNITED STATES
Registered 2012 ORGANIC LIGHT EMITTING DIODE DEVICE AND FABRICATION METHOD THEREOF UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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