Subjects : Thermal annealing

Articles (32)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2020	Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing Woo Jiyong IEEE Electron Device Letters, v.41, no.2, pp.232-235	23
Conference	2017	Passive and Active Wavelength Trimming of Temperature-Insensitive Silicon MZI Lee Jong-Moo International Conference on Group IV Photonics (GFP) 2017, pp.119-120	0
Journal	2017	The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors Chosy Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.26, pp.6521-6526	15
Journal	2016	Solution-processed Indium-free ZnO/SnO2 Bilayer Heterostructures as a Low-temperature Route to High-performance Metal Oxide Thin-film Transistors with Excellent Stabilities Sooji Nam Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.4, no.47, pp.11298-11304	45
Journal	2016	Sputter Deposition of Sn-doped ZnO/Ag/Sn-doped ZnO Transparent Contact Layer for GaN LED Applications Rae-Man Park Materials Letters, v.180, pp.72-76	14
Journal	2016	Work Function Engineering of SnO Single Crystal Microplates with Thermal Annealing 도원희 Nanotechnology, v.27, no.33, pp.1-7	19
Conference	2016	Athermal and Wavelength-Trimmable Silicon MZI Lee Jong-Moo Optical Fiber Communication Conference (OFC) 2016, pp.1-3	2
Journal	2016	Postfabrication Trimming of CMOS-Compatible Athermal MZI by Thermal Annealing Lee Jong-Moo IEEE/OSA Journal of Lightwave Technology, v.34, no.4, pp.1288-1292	6
Journal	2015	Ohmic Contact to AlGaN/GaN Heterostructures on Sapphire Substrates Kim Zin-Sig Journal of the Korean Physical Society, v.66, no.5, pp.779-784	3
Journal	2014	Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals Sunghoon Hong ACS Nano, v.8, no.1, pp.797-806	116
Journal	2014	Solution-Processed Phase-Change VO2 Metamaterials from Colloidal Vanadium Oxide (VOx) Nanocrystals 백태종 ACS Nano, v.8, no.1, pp.797-806	116
Journal	2013	Effect of Silicide/Silicon Hetero-Junction Structure on Thermal Conductivity and Seebeck Coefficient Choi Won Chul Journal of Nanoscience and Nanotechnology, v.13, no.12, pp.7801-7805	6
Journal	2013	Liquid Crystal Devices Incorporating Transparent Zn, Sn Co-Doped In2O3 Electrodes Prepared by Direct Inkjet-Printing of Nanosized Particles 박경원 Journal of Physics D : Applied Physics, v.46, no.14, pp.1-6	11
Journal	2012	Top-gate staggered poly(3,3″′-dialkyl-quarterthiophene) organic thin-film transistors with reverse-offset-printed silver source/drain electrodes Minseok Kim Applied Physics Letters, v.101, no.13, pp.1-5	19
Conference	2012	The thermal annealing effects of gate insulator on the electrical performance and stability of Ti, B-doped In-Zn oxide thin film transistors International Conference on Electronic Materials and Nanotechnology for Green Environment (ENGE) 2012, pp.1-1
Journal	2012	Two-Step Selenization of Cu-In-Ga Precursors for CIGS Thin-Film Solar Cells by Using a Se Cracker 이호섭 Journal of the Korean Physical Society, v.60, no.10, pp.1753-1756	7
Journal	2012	Thermally Modulated Multilayered Graphene Oxide for Hydrogen Storage Kim Byeonghoon Physical Chemistry Chemical Physics, v.14, no.4, pp.1480-1484	73
Journal	2011	Enhancement of H2 Uptake Due to Morphological Modulation in Vanadium Pentoxide Foam 김병훈 International Journal of Hydrogen Energy, v.36, no.20, pp.12887-12891	4
Conference	2011	Efficient Reducing Method of Graphene Oxide for Gas Sensor Applications Lee Hyung-Kun Eurosensors 2011, pp.892-895	12
Journal	2010	Effects of Thermal Annealing on the Efficiency of Bulk-Heterojunction Organic Photovoltaic Devices 정진욱 Current Applied Physics, v.10, no.3 SUPPL., pp.S520-S524	8
Journal	2010	In-Situ Transmission Electron Microscopy Investigation of the Interfacial Reaction between Er and SiO2 Films 최철종 Materials Transactions, v.51, no.4, pp.793-798	3
Journal	2009	Platinum Silicided P-Type Schottky Barrier Metal-Oxide-Semiconductor Field-Effect Transistors Using Silicidation Through Oxide Technique 문란주 Journal of the Electrochemical Society, v.156, no.8, pp.H621-H624	6
Journal	2009	Characteristics of Metal-Oxide-Semiconductor (MOS) Device with Er Metal Gate on SiO2 Film 최철종 Microelectronics Reliability, v.49, no.4, pp.463-465	2
Journal	2008	The Fabrication of Bolometric IR Detector for Glucose Concentration Detection 최주찬 센서학회지, v.17, no.4, pp.250-255
Journal	2008	Effects of Oxygen Concentration on the Electrical Properties of ZnO Films 김홍승 Ceramics International, v.34, no.4, pp.1097-1101	30
Journal	2007	Er and Pt Gate Electrodes Formed on SiO2 Gate Dielectrics Choi Chel-Jong Electrochemical and Solid-State Letters, v.11, no.2, pp.H22-H25	0
Journal	2007	Electrical and Structural Properties of High-k Er-silicate Gate Dielectric Formed by Interfacial Reaction between Er and SiO2 Films Choi Chel-Jong Applied Physics Letters, v.91, no.1, pp.1-3	17
Journal	2007	Thermal Annealing Effects on the Electrical Characteristics of the Back Interface in Nano-silicon-on-insulator Channel 조원주 Applied Physics Letters, v.90, no.14, pp.1-3	9
Conference	2006	Comparison of Laser Beam Annealing with Thermal Annealing of a-SiC Layer in Si-QD LED Structure Kyung-Hyun Kim MRS Meeting 2006 (Fall), pp.1-1
Conference	2006	Optical and Electrical Properties of High and Low Resistive CuInSe2 films: A Potential Photoactive Channel for Chalcogen Photo Thin Film Transistor Song Kibong Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-2
Journal	2005	Structural and Luminescence Characteristics of Post-Annealed ZnO Films on Si (111) in H2O Ambient 이주영 Japanese Journal of Applied Physics, v.44, no.1-7, pp.L205-L207	12
Journal	2002	Excimer and Aggregate Formations in Poly(fluorene)s Lee Jeong Ik ETRI Journal, v.24, no.6, pp.409-414	35

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