Subject

Subjects : Channel layer

  • Articles (23)
  • Patents (4)
  • R&D Reports (0)
논문 검색결과
Type Year Title Cited Download
Journal 2024 Promotion of Processability in a p-Type Thin-Film Transistor Using a Se–Te Alloying Channel Layer   Choi Kyunghee  ACS Applied Materials & Interfaces, v.16, no.18, pp.23459-23466 2 원문
Conference 2024 High-Performance p-type Thin Film Transistor Using Room Temperature Deposited Se-Te Alloying Channel Layer   Choi Kyunghee  International Thin-Film Transistor Conference (ITC) 2024, pp.1-1
Journal 2023 Novel approach for implementing ternary value logic devices showing negative differential transconductance characteristics by Fowler–Nordheim tunneling   Kim Jieun  Materials Science in Semiconductor Processing, v.164, pp.1-6 1 원문
Journal 2021 Synaptic Transistors Exhibiting Gate-Pulse-Driven, Metal-Semiconductor Transition of Conduction   Lim Jungwook  Materials, v.14, no.24, pp.1-8 4 원문
Journal 2021 Photoinduced Synaptic Behavior of InxTiyO Thin Film Transistors   Lim Jungwook  Advanced Electronic Materials, v.7, no.4, pp.1-7 10 원문
Conference 2020 Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs   Sungjae Chang  PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526 1 원문
Conference 2020 Unmanned Aerial Vehicle Identification Success Probability with LoRa Communication Approach   Jinhyung Oh  International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) 2020, pp.1-6 6 원문
Journal 2020 A Study on the Behavior of Gate Recess Etch by Photoresist Openings on Ohmic Electrode in InAlAs/InGaAs mHEMT Devices   Min Byoung-Gue  Journal of the Korean Physical Society, v.77, no.2, pp.122-126 4 원문
Journal 2019 All-oxide Thin-film Transistors with Channels of Mixed InOx-ZnOy Formed by Plasma-enhanced Atomic Layer Deposition Process   Lee Jeongmu  Journal of Vacuum Science and Technology A, v.37, no.6, pp.1-7 11 원문
Journal 2019 Analysis of DC Characteristics in GaN-Based Metal-Insulator-Semiconductor High Electron Mobility Transistor with Variation of Gate Dielectric Layer Composition by Considering Self-Heating Effect   황인태  Applied Sciences, v.9, no.17, pp.1-13 6 원문
Journal 2019 2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate   Mun Jae Kyoung  ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 118 원문
Journal 2018 Visible Light-Erasable Oxide FET-Based Nonvolatile Memory Operated with a Deep Trap Interface   Kim Tae Yoon  ACS Applied Materials & Interfaces, v.10, no.31, pp.26405-26412 14 원문
Journal 2014 Facile One-Step Synthesis of Magnesium-Doped ZnO Nanoparticles: Optical Properties and Their Device Applications   Ji-Young Oh  Journal of Physics D : Applied Physics, v.46, no.28, pp.1-5 22 원문
Journal 2013 Nonvolatile memory performance improvements for solution-processed thin-film transistors with composition-modified In–Zn–Ti–O active channel and ferroelectric copolymer gate insulator   박준용  Organic Electronics, v.14, no.9, pp.2148-2157 7 원문
Journal 2012 Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation   Oh Himchan  ETRI Journal, v.34, no.2, pp.280-283 16 원문
Journal 2009 Chalcogen-based thin film transistor using CuInSe2 photo-active layer   김경암  Current Applied Physics, v.9, no.6, pp.1326-1329 5 원문
Journal 2009 Impact of device configuration on the temperature instability of Al–Zn–Sn–O thin film transistors   Jae Kyeong Jeong  Applied Physics Letters, v.95, no.12, pp.123505-1-123505-3 58 원문
Journal 2009 High performance thin film transistor with cosputtered amorphous Zn–In–Sn–O channel: Combinatorial approach   Ryu Min Ki  Applied Physics Letters, v.95, no.7, pp.072104-1-072104-3 118 원문
Journal 2009 Room temperature fabrication of ZnO nanorod films: synthesis and application as a channel layer of transparent thin film transistors   Ji-Young Oh  Chemical Communications, pp.4545-4547 15 원문
Journal 2009 High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators   Cheong Woo-Seok  Japanese Journal of Applied Physics, v.48, no.4, pp.1-15 16 원문
Journal 2009 Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors   Cheong Woo-Seok  Journal of the Korean Physical Society, v.54, no.1, pp.473-477 1 원문
Journal 2007 Undoped Homojunction Chalcogen Thin-film Transistors on Glass   Song Kibong  Applied Physics Letters, v.90, no.26, pp.1-3 9 원문
Conference 2006 Optical and Electrical Properties of High and Low Resistive CuInSe2 films: A Potential Photoactive Channel for Chalcogen Photo Thin Film Transistor   Song Kibong  Nanotechnology Materials and Devices Conference (NMDC) 2006, pp.1-2
특허 검색결과
Status Year Patent Name Country Family Pat. KIPRIS
Registered 2009 Graphene field effect transistor and method of manufacturing the same UNITED STATES
Registered 2006 SCHOTTKY BARRIER TUNNEL TRANSISTOR AND METHOD OF MANUFACTURING THE SAME UNITED STATES
Registered 2006 METHOD OF FABRICATING PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR UNITED STATES
Registered 2019 INFRARED OPTICAL SENSOR AND MANUFACTURING METHOD THEREOF UNITED STATES
연구보고서 검색결과
Type Year Research Project Primary Investigator Download
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