Journal
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2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
Jeonggil Kim Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
|
2023 |
Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer
이준혁 Micromachines, v.14, no.6, pp.1-10 |
5 |
원문
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Journal
|
2022 |
Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs
Kang Soo Cheol Current Applied Physics, v.39, pp.128-132 |
0 |
원문
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Journal
|
2021 |
Power Module Stray Inductance Extraction: Theoretical and Experimental Analysis
Jung Dong Yun ETRI Journal, v.43, no.5, pp.891-899 |
2 |
원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2019 |
2.32 kV Breakdown Voltage Lateral β-Ga2O3 MOSFETs with Source-Connected Field Plate
Mun Jae Kyoung ECS Journal of Solid State Science and Technology, v.8, no.7, pp.3079-3082 |
118 |
원문
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Journal
|
2019 |
Growth of AlGaN/GaN Heterostructure with Lattice-matched AlIn(Ga)N Back Barrier
김정길 Solid-State Electronics, v.152, pp.24-28 |
9 |
원문
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Journal
|
2018 |
Graphene-Incorporated Soft Capacitors for Mechanically Adjustable Electro-Optic Modulators
이성재 ACS Applied Materials & Interfaces, v.10, no.47, pp.10781-40788 |
10 |
원문
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Journal
|
2018 |
High Figure-of-Merit (V 2 BR /R ON ) AlGaN/GaN Power HEMT With Periodically C-Doped GaN Buffer and AlGaN Back Barrier
이준혁 IEEE Journal of the Electron Devices Society, v.6, pp.1179-1186 |
39 |
원문
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Journal
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
조영우 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
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Journal
|
2018 |
Normally-off AlGaN/GaN-based MOS-HEMT with Self-terminating TMAH Wet Recess Etching
손동혁 Solid-State Electronics, v.141, pp.7-12 |
9 |
원문
|
Journal
|
2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Conference
|
2017 |
A Compact UHF Cross Dipole Antenna with Reconfigurable Radiation Patterns Using Passive Parasitic Elements
Lee Jung Nam International Symposium on Antennas and Propagation (ISAP) 2017, pp.1-2 |
1 |
원문
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Journal
|
2017 |
Pulse-Mode Dynamic Ron Measurement of Large-Scale High-Power AlGaN/GaN HFET
Minki Kim ETRI Journal, v.39, no.2, pp.292-299 |
5 |
원문
|
Journal
|
2017 |
The Effects of Tetramethylammonium Hydroxide Treatment on the Performance of Recessed-gate AlGaN/GaN High Electron Mobility Transistors
Jae Won Do Thin Solid Films, v.628, pp.31-35 |
10 |
원문
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Journal
|
2016 |
Effect of Fluoride-based Plasma Treatment on the Performance of AlGaN/GaN MISFET
Hokyun Ahn ETRI Journal, v.38, no.4, pp.675-684 |
5 |
원문
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Journal
|
2015 |
Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system
Mun Jae Kyoung Solid-State Electronics, v.114, pp.121-130 |
2 |
원문
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Conference
|
2015 |
High-Efficiency Voltage Regulation Stage in Energy Harvesting Systems
Kim Sung Eun International Conference on Very Large Scale Integration (VLSI-SoC) 2015, pp.237-240 |
1 |
원문
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Conference
|
2015 |
Effects on Breakdown Voltage Characteristics of Various Field Plates in GaN FETs
Woojin Chang International Conference on Nitride Semiconductors (ICNS) 2015, pp.1-2 |
|
|
Journal
|
2015 |
20 mA bidirectional laser triggering in planar devices based on vanadium dioxide thin films using CO_2 laser
김지훈 Optics Express, v.23, no.11, pp.14234-14244 |
6 |
원문
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Conference
|
2013 |
A Two-Dimensional Ultrasonic Transducer Having Planar Backing Array Electrodes
Chang-Geun Ahn SENSORS 2013, pp.1-4 |
0 |
원문
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Conference
|
2012 |
Plastic-Based Guest-Host Liquid Crystal Displays
Gi Heon Kim International Symposium on Advanced Display Materials and Devices (ADMD) 2012, pp.1-2 |
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Journal
|
2012 |
N × N polymer matrix switches using thermo-optic total-internal-reflection switch
Han Young-Tak Optics Express, v.20, no.12, pp.13284-13295 |
29 |
원문
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Journal
|
2009 |
Ultra-thin polymer gate dielectrics for top-gate polymer field-effect transistors
Yong-Young Noh Organic Electronics, v.10, no.1, pp.174-180 |
121 |
원문
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Conference
|
2007 |
Sensing gap reconfigurable capacitive type MEMS accelerometer
Chang Han Je Device and Process Technologies for Microelectronics, MEMS, Photonics, and Nanotechnology IV (SPIE 6800), v.6800, pp.1-7 |
5 |
원문
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Journal
|
2003 |
엑시머 레이저 에 의해 형성된 TFT 특성
Kim Yong Hae Thin Solid Films, v.440, no.1-2, pp.169-173 |
12 |
원문
|
Journal
|
2002 |
Breakdown Voltage Improvement of p-LDMOSFET with an Uneven Racetrack Source for PDP Driver IC Applications
Roh Tae Moon ETRI Journal, v.24, no.4, pp.328-331 |
8 |
원문
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