Subjects : Post-annealing

Articles (29)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Effect of the Post-Annealing Temperature on the Interfacial Reaction Between a High Tc Superconductor and Topological Insulator Lee Woo Jung Advanced Electronic Materials, v.10, no.7, pp.1-9	3
Journal	2018	Deposition Pressure Dependent Electric Properties of (Hf, Zr)O2 Thin Films Made by RF Sputtering Deposition Method Moon Seungeon Journal of the Korean Physical Society, v.73, no.11, pp.1712-1715	0
Journal	2018	High-performance ZnO:Ga/Ag/ZnO:Ga Multilayered Transparent Electrodes Targeting Large-scale Perovskite Solar Cells Seong Hyun Lee Solar Energy Materials & Solar Cells, v.186, pp.378-384	28
Journal	2018	Effect of Post-Annealing on Low-Temperature Solution-Processed High-Performance Indium Oxide Thin Film Transistors Yeonwha Oh Science of Advanced Materials, v.10, no.4, pp.518-521
Journal	2018	High Performance SONOS Flash Memory with In-Situ Silicon Nanocrystals Embedded in Silicon Nitride Charge Trapping Layer 임재갑 Solid-State Electronics, v.140, pp.134-138	13
Conference	2017	Photoluminescence of Sulfur-Incorporated CIGS Solar Cells with Sputter-Zn(O,S) Buffer Layer through Post-Annealing Lee Woo Jung 한국태양광발전학회 학술 대회 (추계) 2017, pp.1-1
Journal	2017	Photoluminescence of sulfur-incorporated CIGS solar cells through post-annealing 남윤성 Journal of Luminescence, v.188, pp.595-599	5
Journal	2016	Improved stability of electrical properties of nitrogen-added Al 2 O 3 films grown by PEALD as gate dielectric Lee Da Jung Materials Research Bulletin, v.83, pp.597-602	10
Conference	2015	High Performance, Low-Temperature Solution-Processed Indium Oxide Thin Film Transistors by Post-Annealing Yeonwha Oh International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1
Conference	2015	Effect of Post-Annealing Temperatures on SnO2/Al2O3 Superlattice Thin Fiim Transistors Grown by Atomic Layer Deposition Lee Hwanjae International Conference on Advanced Electromaterials (ICAE) 2015, pp.1-1
Conference	2015	The Effect of Post-Annealing on Bias Stability of InOx/ZnO Superlattice Thin Film Transistors Grown by Plasma Enhanced Atomic Layer Deposition Lee Hwanjae Asian-European International Conference on Plasma Surface Engineering (AEPSE) 2015, pp.1-1
Journal	2014	Characteristics of Temperature and Wavelength Dependence of CuInSe2 Thin-Film Solar Cell with Sputtered Zn(O,S) and CdS Buffer Layers Wi Jae-Hyung Physica Status Solidi (A), v.211, no.9, pp.2172-2176	18
Journal	2014	Post-Annealing Effect on the Reactively Sputter-Grown CIGS Thin Films and its Influence to Solar Cell Performance 김제하 Current Applied Physics, v.14, no.Supplement 1, pp.S63-S68	21
Journal	2014	Improved Surface Passivation Using Dual-Layered a-Si:H for Silicon Heterojunction Solar Cells Lee Kyu Sung ECS Solid State Letters, v.3, no.3, pp.P33-P36	17
Conference	2012	Low Temperature Fabrication of Aqueous Solution Processed Flexible Indium Oxide Transparent Thin-Film Transistors on a Plastic Substrate 황영환 International Meeting on Information Display (IMID) 2012, pp.681-682
Journal	2011	Effects of the Hole Tunneling Barrier Width on the Electrical Characteristic in Silicon Quantum Dots Light-Emitting Diodes Tae-Youb Kim Japanese Journal of Applied Physics, v.50, no.4 PART 2, pp.1-3	4
Journal	2010	Effect of High Temperature Post-Annealing of La0.7Sr0.3MnO3 Films Deposited by Radio Frequency Magnetron Sputtering on SiO2/Si Substrates Heated at Low Temperature 최선규 Thin Solid Films, v.518, no.15, pp.4432-4436	3
Journal	2009	Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors Cheong Woo-Seok ETRI Journal, v.31, no.6, pp.660-666	26
Journal	2009	Al-Zn-Sn-O thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho Doo-Hee IEICE Transactions on Electronics, v.E92-C, no.11, pp.1340-1346	8
Journal	2009	Electrical, Structural and Optical Characterization of Copper Oxide thin Films as a Function of Post Annealing Temperature V. Figueiredo Physica Status Solidi (A), v.206, no.9, pp.2143-2148	71
Journal	2009	Growth and Properties of Sb-doped ZnMgO Thin Films Deposited Usingrf Magnetron Sputtering Chung Sung Mook Journal of the Korean Physical Society, v.55, no.3, pp.1123-1127	2
Conference	2009	21.2: Al and Sn‐Doped Zinc Indium Oxide Thin Film Transistors for AMOLED Back‐Plane Cho Doo-Hee Society for Information Display (SID) International Symposium 2009, pp.280-283	29
Journal	2009	Metal-Doped Oxide Electrodes for Transparent Thin-Film Transistors Fabricated by Direct Co-Sputtering Method Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.04C089-1-04C089-5	0
Journal	2009	Passivation of Bottom-Gate IGZO Thin Film Transistors Cho Doo-Hee Journal of the Korean Physical Society, v.54, no.1, pp.531-534	43
Conference	2008	Al-Zn-Sn-O Thin Film Transistors with Top and Bottom Gate Structure for AMOLED Cho Doo-Hee International Display Workshops (IDW) 2008, pp.1625-1628	0
Conference	2008	Novel Oxide Thin Film Transistors for Transparent AMOLED Cho Doo-Hee International Meeting on Information Display (IMID) 2008, pp.1101-1104	1
Conference	2008	P‐20: Post‐Annealing and Passivations of Transparent Bottom Gate IGZO Thin Film Transistors Cho Doo-Hee Society for Information Display (SID) International Symposium 2008, pp.1243-1246	6
Journal	2008	Characteristics of Vanadium Dioxide Films Deposited by RF-magnetron Sputter Deposition Technique using V-metal Target Sun Jin Yun Physica B : Condensed Matter, v.403, no.5-9, pp.1381-1383	20
Conference	2006	Semiconducting Nanowire Device Characterization for a Chemical Sensor Park Jonghyurk International Meeting on Chemical Sensors (IMCS) 2006, pp.1-2

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