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Journal
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2025 |
Precharge switch based on metal–oxide–semiconductor‐controlled thyristor for power relay assembly of battery electric vehicles
Jung Dong Yun ETRI Journal, v.47, no.2, pp.326-337 |
1 |
원문
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Journal
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2023 |
A 275-GHz InP HBT H-Band Amplifier with Transmission Line-Based Capacitively Coupled Resonator Matching Technique
최찬규 IEEE Transactions on Terahertz Science and Technology, v.13, no.6, pp.659-670 |
1 |
원문
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Conference
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2022 |
Comparison of Characterization of IGBT, SiC MOSFET, and MCT for a Pre-charge Switch in Electric Vehicles
Jung Dong Yun 대한전자공학회 학술 대회 (하계) 2022, pp.1613-1616 |
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Journal
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2013 |
Negative-Differential-Resistance-Switching Si-Transistor Operated by Power Pulse and Identity of Zener Breakdown
Hyun-Tak Kim Applied Physics Letters, v.103, no.17, pp.1-3 |
2 |
원문
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Journal
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2013 |
Reverse-Conducting IGBT Using MEMS Technology on the Wafer Back Side
Won Jong Il ETRI Journal, v.35, no.4, pp.603-609 |
12 |
원문
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Journal
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2011 |
Dependences of the Characteristics of an InGaP/GaAs HBT for Applications in Power Amplifiers on the Structural Parameters
Min Byoung-Gue Journal of the Korean Physical Society, v.59, no.21, pp.435-438 |
2 |
원문
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Journal
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2010 |
Linearity enhanced 2.4 GHz WLAN HBT power amplifier using digitally-controlled tunable output matching network with pHEMT switch in GaAs BiFET technology
윤상웅 Electronics Letters, v.46, no.23, pp.1573-1574 |
6 |
원문
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Journal
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2009 |
Fabrication of Transimpedance Amplifier Module and Post-Amplifier Module for 40 Gb/s Optical Communication Systems
Jongmin Lee ETRI Journal, v.31, no.6, pp.749-754 |
3 |
원문
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Conference
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2009 |
A 60-dB Image Rejection Single-Side Band Transmitter in InGaP/GaAs HBT Technology
Park Pil Jae International Technical Conference on Circuits/Systems, Computers and Communications (ITC-CSCC) 2009, pp.1-3 |
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Journal
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2009 |
Effect of Silicidation on Silicon-Based Thin Film Resistors in SiGe Integrated Circuits
Lee Sang-Heung Journal of Materials Science : Materials in Electronics, v.20, no.4, pp.354-359 |
0 |
원문
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Journal
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2008 |
Emitter Scaling Dependence of Mixed-Mode Reliability Degradation in Silicon–Germanium Heterojunction Bipolar Transistors
Lee Seung-Yun Japanese Journal of Applied Physics, v.47, no.7, pp.5309-5313 |
2 |
원문
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Journal
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2007 |
Characteristics of Self-aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
Min Byoung-Gue Solid State Phenomena, v.124-126, pp.97-100 |
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원문
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Journal
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2007 |
A Flip-Chip-Packaged InP HBT Transimpedance Amplifier for 40-Gb/s Optical Link Applications
Ju Chull Won Journal of the Korean Physical Society, v.50, no.3, pp.862-865 |
2 |
원문
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Journal
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2007 |
Packaged Broadband Amplifier for 40-Gb/s Optical Transmission Systems in InP HBT Technology
Jongmin Lee Journal of the Korean Physical Society, v.50, no.3, pp.871-874 |
2 |
원문
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Journal
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2006 |
Fabrication of Reliable Self-Aligned InP/InGaAs/InP Double Heterojunction Bipolar Transistor with Hexagonal Emitter Mesa Structure
Min Byoung-Gue Journal of the Korean Physical Society, v.49, no.3, pp.S780-S783 |
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Conference
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2006 |
Characteristics of Self-Aligned InP/InGaAs Heterojunction Bipolar Transistor Assisted by Silicon Nitride Sidewall
Min Byoung-Gue IUMRS International Conference in Asia (IUMRS-ICA) 2006, pp.97-100 |
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Journal
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2006 |
Dependence of the DC and the RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won Journal of the Korean Physical Society, v.49, no.3, pp.1202-1206 |
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Journal
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2006 |
Characterization of silicon–germanium heterojunction bipolar transistors degradation in silicon–germanium BiCMOS technologies
Lee Seung-Yun Solid-State Electronics, v.50, no.3, pp.333-339 |
4 |
원문
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Conference
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2006 |
Characteristics of Emitter-Base Self-Aligned InP/InGaAs/InP Double Heterojuction Bipolar Transistors with Various Emitter Shape
Min Byoung-Gue 한국반도체 학술 대회 (KCS) 2006, pp.1-2 |
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Conference
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2005 |
Dependence of DC, and RF Characteristics of InGaAs /InP Single Heterojunction Bipolar Transistors on the Collector Layer Thickness
Kim Yong Won International Conference on Advanced Materials and Devices (ICAMD) 2006, pp.1-7 |
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Conference
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2005 |
A Comparative Study on the DC, RF Characteristics of InGaAs/InP Single Heterojunction Bipolar Transistors with Different Collector Layer Thickness
Kim Yong Won Asia-Pacific Microwave Conference (APMC) 2005, pp.1-4 |
0 |
원문
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Journal
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2005 |
Monolithic SiGe Up-/Down-Conversion Mixers with Active Baluns
Lee Sang-Heung ETRI Journal, v.27, no.5, pp.569-578 |
3 |
원문
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Journal
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2005 |
An X-Band Carbon-Doped InGaP/GaAs Heterojunction Bipolar Transistor MMIC Oscillator
김영기 ETRI Journal, v.27, no.1, pp.75-80 |
5 |
원문
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Journal
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2003 |
Effects of high-dose BF2+ implantation on the formation of Ti-germanosilicide on polycrystalline Si/Si0.87Ge0.13/Si layers
Park Chan Woo Journal of Vacuum Science and Technology B, v.21, no.5, pp.2193-2197 |
3 |
원문
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Journal
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2003 |
An InGaP-GaAs HBT MMIC smart power amplifier for W-CDMA mobile handsets
Kim Joon Hyung IEEE Journal of Solid-State Circuits, v.38, no.6, pp.905-910 |
53 |
원문
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Conference
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2003 |
MMIC power amplifier adaptively linearized with RF coupled active bias circuit for W-CDMA mobile terminals applications
Kim Joon Hyung International Microwave Symposium (IMS) 2003, pp.2209-2212 |
6 |
원문
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Journal
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2003 |
Linearised HBT MMIC Power Amplifier with Partially RF Coupled Active Bias Circuit for W-CDMA Portable Terminals Applications
Kim Joon Hyung Electronics Letters, v.39, no.10, pp.781-783 |
4 |
원문
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