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Journal
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2025 |
Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT
김희태 IEEE Transactions on Electron Devices, v.72, no.5, pp.2399-2405 |
0 |
원문
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Journal
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2024 |
Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 |
2 |
원문
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Journal
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2024 |
Effects of ZnSO4 concentration on the high-rate deposition of CBD-Zn(O,S) buffer layer for Cu(In,Ga)Se2 thin-film solar cells
Lee Woo Jung Ceramics International, v.50, no.2, pp.3519-3525 |
1 |
원문
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Journal
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2021 |
Evolution of Morphological and Chemical Properties at p–n Junction of Cu(In,Ga)Se2 Solar Cells with Zn(O,S) Buffer Layer as a Function of KF Postdeposition Treatment Time
Lee Woo Jung ACS Applied Materials & Interfaces, v.13, no.41, pp.48611-48621 |
10 |
원문
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Conference
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2019 |
Schottky Barrier Height Modulation by ZnO Interlayer for High-Performance MoS2 Field-Effect Transistors
Jisu Jang International Conference on Advanced Electromaterials (ICAE) 2019, pp.1-1 |
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Journal
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2018 |
Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure
칸무하메드 ACS Applied Materials & Interfaces, v.10, no.28, pp.23961-23967 |
19 |
원문
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Journal
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2018 |
High Performance Self-gating Graphene/MoS2 Diode Enabled by Asymmetric Contacts
무하마드칸 Nanotechnology, v.29, no.39, pp.1-6 |
7 |
원문
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Journal
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2018 |
Gate Tunable Self-Biased Diode Based on Few Layered MoS2 and WSe2
무하마드 칸 Chemistry of Materials, v.30, no.3, pp.1011-1016 |
22 |
원문
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Journal
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2018 |
Ultrafast Photocarrier Dynamics at the p-n Junction in Cu(In,Ga)Se2 Solar Cell with Various Zn(O,S) Buffer Layers Measured by Optical Pump-Terahertz Probe Spectroscopy
Lee Woo Jung ACS Applied Energy Materials, v.1, no.2, pp.522-530 |
20 |
원문
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Journal
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2017 |
Thickness-dependent Schottky Barrier Height of MoS2 Field-effect Transistors
김준영 Nanoscale, v.9, no.18, pp.6151-6157 |
127 |
원문
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Journal
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2016 |
Behavior of Photocarriers in the Light-Induced Metastable State in the p-n Heterojunction of a Cu(In,Ga)Se2 Solar Cell with CBD-ZnS Buffer Layer
Lee Woo Jung ACS Applied Materials & Interfaces, v.8, no.34, pp.22151-22158 |
56 |
원문
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Journal
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2016 |
Surface Al Doping of 4H-SiC Via Low Temperature Annealing
Junbo Park Applied Physics Letters, v.109, no.3, pp.1-5 |
5 |
원문
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Conference
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2016 |
Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate
Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2 |
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Journal
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2015 |
High-Voltage 4H-SiC Trench MOS Barrier Schottky Rectifier with Low Forward Voltage Drop Using Enhanced Sidewall Layer
Cho Doo Hyung Japanese Journal of Applied Physics, v.54, no.12, pp.1-5 |
6 |
원문
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Conference
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2015 |
Strong Visible Light Emission from Silicon Nanocrystals Embedded into a Silicon Carbide Film
Huh Chul International Conference on Quantum, Nano and Micro Technologies (ICQNM) 2015, pp.5-6 |
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Journal
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2015 |
Strong Visible Electroluminescence from Silicon Nanocrystals Embedded in a Silicon Carbide Film
Huh Chul Applied Physics Letters, v.106, no.21, pp.1-4 |
15 |
원문
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Journal
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2014 |
Electrical Properties of Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN Metal-Insulator-Semiconductor (MIS) Structure
V Rajagopal Reddy Semiconductor Science and Technology, v.29, no.7, pp.1-6 |
29 |
원문
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Journal
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2013 |
Enhancement in Electron Transport and Light Emission Efficiency of a Si Nanocrystal Light-Emitting Diode by a SiCN/SiC Superlattice Structure
Huh Chul Nanoscale Research Letters, v.8, no.1, pp.1-7 |
9 |
원문
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Journal
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2011 |
Electrical Characterization of n/p-Type Nickel Silicide/Silicon Junctions by Sb Segregation
Jun Myungsim Journal of Nanoscience and Nanotechnology, v.11, no.8, pp.7339-7342 |
0 |
원문
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Journal
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2011 |
Analysis of Transconductance (gm) in Schottky-Barrier MOSFETs
최성진 IEEE Transactions on Electron Devices, v.58, no.2, pp.427-432 |
35 |
원문
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Journal
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2010 |
Temperature Dependency and Carrier Transport Mechanisms of Ti/p-Type InP Schottky Rectifiers
V. Janardhanam Journal of Alloys and Compounds, v.504, no.1, pp.146-150 |
87 |
원문
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Journal
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2009 |
Controlling Electron and Hole Charge Injection in Ambipolar Organic Field‐Effect Transistors by Self‐Assembled Monolayers
X. Cheng Advanced Functional Materials, v.19, no.15, pp.2407-2415 |
221 |
원문
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Conference
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2008 |
High Performance Schottky Barrier MOSFETs with Workfunction Engineering
Jang Moon Gyu Silicon Nanoelectronics Workshop (SNW) 2008, pp.1-2 |
1 |
원문
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Journal
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2008 |
Schottky Barrier Heights of n/p-type Erbium-silicided Schottky Diodes
Jun Myung Sim Microelectronic Engineering, v.85, no.5-6, pp.1395-1398 |
5 |
원문
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Journal
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2008 |
Analysis of Temperature-dependent Barrier Heights in Erbium-silicided Schottky Diodes
Jun Myung Sim Journal of Vacuum Science and Technology B, v.26, no.1, pp.137-140 |
8 |
원문
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Conference
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2007 |
Schottky Barrier Heights of ErSi1.7 Schottky Diodes
Jun Myung Sim International Conference on Micro and Nano Engineering (MNE) 2007, pp.1-2 |
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Journal
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2007 |
Statistical analysis of electronic properties of alkanethiols in metal–molecule–metal junctions
김태욱 Nanotechnology, v.18, no.31, pp.1-8 |
119 |
원문
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Journal
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2005 |
Transport Mechanism of Self-Assembled D-σ-A-Thiol Monolayers in Metal-Molecule-Metal Structure
Kim Do Hyun Synthetic Metals, v.152, no.1-3, pp.293-296 |
5 |
원문
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Journal
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2003 |
Erbium silicided n-type Schottky barrier tunnel transistors for nanometer regime applications
Jang Moon Gyu IEEE Transactions on Nanotechnology, v.2, no.4, pp.205-209 |
16 |
원문
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Journal
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2002 |
Analysis of Schottky Barrier Height in Small Contacts Using a Thermionic-Field Emission Model
Jang Moon Gyu ETRI Journal, v.24, no.6, pp.455-461 |
39 |
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