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Conference
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2024 |
An 8.9-17.3 GHz Low Noise Amplifier in Enhancement-Mode GaAs 0.15-um pHEMT process
Kong Sunwoo Asia-Pacific Microwave Conference (APMC) 2024, pp.1-3 |
0 |
원문
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Conference
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2024 |
Design of a Cascode Low Noise Amplifier Using InGaAs E-mode 0.15-um pHEMT Process
Kong Sunwoo 한국전자파학회 종합 학술 대회 (하계) 2024, pp.1-1 |
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Conference
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2022 |
A 28GHz-band integrated GaAs Power Amplifier for 5G Mobile Communications
Park Bong Hyuk International SoC Design Conference (ISOCC) 2022, pp.376-377 |
1 |
원문
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Conference
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2022 |
A Ku-band Cascode Low Noise Amplifier using InGaAs E-mode 0.15-um pHEMT Technology
Kong Sunwoo Global Symposium on Millimeter-Waves & Terahertz (GSMM) 2022, pp.32-34 |
4 |
원문
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Journal
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2020 |
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors
Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9 |
5 |
원문
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Conference
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2019 |
A Miniatured 28-GHz FEM using a 0.15-μm InGaAs/GaAs E-mode pHEMT Process
Lee Hui Dong European Microwave Integrated Circuits Conference (EuMIC) 2019, pp.334-337 |
6 |
원문
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Conference
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2019 |
0.15-μm E-mode pHEMT을 이용한 소형 28-GHz FEM 개발
Lee Hui Dong 한국전자파학회 학술 대회 (하계) 2019, pp.590-590 |
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Journal
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2019 |
A 1‐W Ka‐band power amplifier using 0.15‐μm InGaAs/GaAs E‐mode pHEMT technology
Lee Hui Dong Microwave and Optical Technology Letters, v.61, no.7, pp.1706-1711 |
4 |
원문
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Conference
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2018 |
A 28-GHz 28.5-dBm power amplifier using 0.15-µm InGaAs E-mode pHEMT technology
Lee Hui Dong International SoC Design Conference (ISOCC) 2018, pp.257-258 |
7 |
원문
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Conference
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2018 |
E-mode GaN HEMT Devices and PA MMICs for 5G Mobile Handsets
Kim Seong-Il International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2018, pp.255-255 |
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Journal
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2018 |
DC and RF Characteristics of Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated by Shallow Recess Combined with Fluorine-Treatment and Deep Recess
Jung Hyunwook ECS Journal of Solid State Science and Technology, v.7, no.4, pp.197-200 |
3 |
원문
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Conference
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2017 |
A 21.9-dB Gain 18.9–35.9-GHz low noise amplifier using InGaAs E-mode 0.15-um pHEMT technology
Kong Sunwoo Asia-Pacific Microwave Conference (APMC) 2017, pp.1203-1206 |
10 |
원문
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Journal
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2017 |
Characteristics of Enhanced-Mode AlGaN/GaN MIS HEMTs for Millimeter Wave Applications
Jongmin Lee Journal of the Korean Physical Society, v.71, no.6, pp.365-369 |
9 |
원문
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Journal
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2017 |
Design and Evaluation of Cascode GaN FET for Switching Power Conversion Systems
Jung Dong Yun ETRI Journal, v.39, no.1, pp.62-68 |
16 |
원문
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Journal
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2017 |
Tunable electrical properties of multilayer HfSe2 field effect transistors by oxygen plasma treatment
강민식 Nanoscale, v.9, no.4, pp.1645-1652 |
50 |
원문
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Conference
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2016 |
Surface Treatment for Recessed Gate and its Effects on the Performance of Enhancement-mode AlGaN/GaN HEMTs
Jae Won Do International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2016, pp.1-1 |
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Journal
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2016 |
Design of Parasitic Inductance Reduction in GaN Cascode FET for High-Efficiency Operation
Woojin Chang ETRI Journal, v.38, no.1, pp.133-140 |
8 |
원문
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Conference
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2014 |
Normally-off GaN MIS-HEMT Using CF4 Plasma Gate Recess
Park Young Rak International Workshop on Nitride Semiconductors (IWN) 2014, pp.1-2 |
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Journal
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2013 |
Fabrication of Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using Double Plasma Treatment
Jong-Won Lim Thin Solid Films, v.547, pp.106-110 |
10 |
원문
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Journal
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2009 |
Chalcogen-based thin film transistor using CuInSe2 photo-active layer
김경암 Current Applied Physics, v.9, no.6, pp.1326-1329 |
5 |
원문
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Journal
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2009 |
High-Mobility Transparent SnO2 and ZnO-SnO2 Thin-Film Transistors with SiO2/Al2O3 Gate Insulators
Cheong Woo-Seok Japanese Journal of Applied Physics, v.48, no.4, pp.1-15 |
16 |
원문
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Journal
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2007 |
Undoped Homojunction Chalcogen Thin-film Transistors on Glass
Song Kibong Applied Physics Letters, v.90, no.26, pp.1-3 |
9 |
원문
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Journal
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2007 |
Pentacene Thin-film Transistors and Inverters with Plasma-enhanced Atomic-layer-deposited Al2O3 Gate Dielectric
Koo Jae Bon Thin Solid Films, v.515, no.5, pp.3132-3137 |
26 |
원문
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Journal
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2006 |
Hysteresis of Pentacene-based Organic Thin Film Transistor and Inverter
구찬회 대한물리의학회지, v.53, no.1, pp.45-50 |
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Journal
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2006 |
The Effects of Surface Treatment on Device Performance in Pentacene-based thin Film Transistor
Koo Jae Bon Synthetic Metals, v.156, no.2-4, pp.99-103 |
39 |
원문
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