Subjects : Bias Stress

Articles (32)
Patents (0)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2025	Millisecond Pulsed Light Annealing for Improving Performance of Top-Gate Self-Aligned a-IGZO TFT 김희태 IEEE Transactions on Electron Devices, v.72, no.5, pp.2399-2405	0
Journal	2024	Benzylphosphonic acid treated ultra-thin ALD-InOx for long term device stability Juhun Lee Journal of Materials Chemistry C, v.12, no.31, pp.11928-11937	1
Journal	2024	Tuning the Threshold Voltage of an Oxide Thin-Film Transistor by Electron Injection Control Using a p−n Semiconductor Heterojunction Structure Jung Hoon Han ACS Applied Materials & Interfaces, v.16, no.24, pp.31254-31260	0
Journal	2022	Effects of DC and AC Stress on the VT Shift of AlGaN/GaN MIS-HEMTs Kang Soo Cheol Current Applied Physics, v.39, pp.128-132	0
Journal	2020	Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility Transistors Kang Soo Cheol Nanomaterials, v.10, no.11, pp.1-9	5
Journal	2017	Impact of Transient Currents Caused by Alternating Drain Stress in Oxide Semiconductors 이현준 Scientific Reports, v.7, pp.1-9	22
Journal	2017	Impact of Transient Currents Caused by Alternating Drain Stress in Oxide Semiconductors Cho Sung Haeng Scientific Reports, v.7, pp.1-9	22
Journal	2017	Hydrazine (N2H4)-Based Surface Treatment for Interface Quality Improvement in Al2O3/AlGaN/GaN MIS-HEMT Jung Hyunwook ECS Journal of Solid State Science and Technology, v.6, no.4, pp.184-186	1
Conference	2016	High Performance Solution-processed Indium-free Metal Oxide Thin-film Transistors Sooji Nam International Meeting on Information Display (IMID) 2016, pp.188-188
Conference	2015	The Highly Stable InGaZnO TFTs Deposited by High Density Plasma Sputtering Cho Sung Haeng International Thin-Film Transistor Conference (ITC) 2015, pp.17-18
Journal	2015	Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers 박준용 Scientific Reports, v.5, pp.1-5	34
Conference	2014	33.3: High Mobility and Highly Stable Aluminum‐doped Indium Zinc Tin Oxide Thin‐Film Transistors Cho Sung Haeng Society for Information Display (SID) International Symposium 2014, v.45, no.1, pp.473-475	5
Journal	2014	Influence of Gate Dielectric/Channel Interface Engineering on the Stability of Amorphous Indium Gallium Zinc Oxide Thin-Film Transistors Cho Sung Haeng Physica Status Solidi (A), v.211, no.9, pp.2126-2133	21
Journal	2013	Unusual Instability Mode of Transparent All Oxide Thin Film Transistor under Dynamic Bias Condition Oh Himchan Applied Physics Letters, v.103, no.12, pp.1-5	3
Journal	2012	Effect of Oxygen Binding Energy on the Stability of Indium-Gallium-Zinc-Oxide Thin-Film Transistors Cheong Woo-Seok ETRI Journal, v.34, no.6, pp.966-969	8
Journal	2012	Effect of the Electrode Materials on the Drain-Bias Stress Instabilities of In–Ga–Zn–O Thin-Film Transistors 박준용 ACS Applied Materials & Interfaces, v.4, no.10, pp.5369-5374	27
Journal	2012	Effect of In-Ga-Zn-O Active Layer Channel Composition on Process Temperature for Flexible Oxide Thin-film Transistors 박준용 Journal of Vacuum Science and Technology B, v.30, no.4, pp.1-5	20
Journal	2012	Improved Stability of Atomic Layer Deposited ZnO Thin Film Transistor by Intercycle Oxidation Oh Himchan ETRI Journal, v.34, no.2, pp.280-283	16
Journal	2011	Low-Temperature Processed Flexible In–Ga–Zn–O Thin-Film Transistors Exhibiting High Electrical Performance Yang Shinhyuk IEEE Electron Device Letters, v.32, no.12, pp.1692-1694	60
Conference	2011	Drain Bias Induced Instability Characteristics in Oxide Thin Film Transistors Yang Shinhyuk International Meeting on Information Display (IMIT) 2011, pp.115-116
Journal	2011	Electrical Properties of Top-Gate Oxide Thin-Film Transistors with Double-Channel Layers Cheong Woo-Seok Journal of Crystal Growth, v.326, no.1, pp.186-190	9
Journal	2011	Light Response of Top Gate InGaZnO Thin Film Transistor Park Sang-Hee Japanese Journal of Applied Physics, v.50, no.3S, pp.1-4	7
Journal	2009	Effects of Interfacial Dielectric Layers on the Electrical Performance of Top-Gate In-Ga-Zn-Oxide Thin-Film Transistors Cheong Woo-Seok ETRI Journal, v.31, no.6, pp.660-666	26
Conference	2009	Oxide TFT Structure Affecting the Device Performance Park Sang-Hee 한국정보디스플레이학회 학술 대회 2009, pp.385-388
Conference	2009	Stability of Nano-Crystalline ZnO and Amorphous IGZO TFTs under Bias Stress Yang Shinhyuk Society for Information Display (SID) International Symposium 2009, pp.1121-1123
Journal	2009	Light Effects on the Bias Stability of Transparent ZnO Thin Film Transistors Jaeheon Shin ETRI Journal, v.31, no.1, pp.62-64	189
Journal	2008	Effects of Gate Bias Stress on the Electrical Characteristics of ZnO Thin Film Transistor 전재홍 Journal of the Korean Physical Society, v.53, no.1, pp.412-415	8
Conference	2008	42.3: Transparent ZnO Thin Film Transistor for the Application of High Aperture Ratio Bottom Emission AM‐OLED Display Park Sang-Hee Society for Information Display (SID) International Symposium 2008, pp.629-632	39
Conference	2008	P‐22: Electrical Stability of ZnO TFT during Gate‐Bias Stress 김태현 Society for Information Display (SID) International Symposium 2008, pp.1250-1253	1
Conference	2007	P‐18: Improvement of Stability in ZnO TFT Under Bias Stress Hwang Chi-Sun Society for Information Display (SID) International Symposium 2007, pp.237-240	6
Journal	2007	Hysteresis and Threshold Voltage Shift of Pentacene Thin-film Transistors and Inverters with Al2O3 Gate Dielectric Koo Jae Bon Applied Physics Letters, v.90, no.13, pp.1-3	58
Conference	2006	The Abnormal Degradation Behavior of ZnO TFT Under Gate Bias Stress Hwang Chi-Sun The Electrochemical Society (ECS) Meeting 2006, pp.301-305	2

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