Subjects : Device characteristics

Articles (36)
Patents (1)
R&D Reports (0)

논문 검색결과
Type	Year	Title	Cited
Journal	2024	Effects of parasitic gate capacitance and gate resistance on radiofrequency performance in LG = 0.15 μm GaN highelectron-mobility transistors for X-band applications Sungjae Chang ETRI Journal, v.46, no.6, pp.1090-1102	2
Journal	2024	Red and green inverted top-emitting quantum dot light-emitting diodes using CMOS-based electrodes for microdisplay applications 심수빈 Optical Materials, v.154, pp.1-8	1
Journal	2021	Technical Trends in GaN RF Electronic Device and Integrated Circuits for 5G Mobile Telecommunication Jongmin Lee 전자통신동향분석, v.36, no.3, pp.53-64
Journal	2021	Growth and Device Properties of ALD Deposited ZnO Films for CIGS Solar Cells Vinaya Kumar Arepalli Materials Science in Semiconductor Processing, v.121, pp.1-8	15
Conference	2020	Impact of Passivation System on Device Performance and Proton Radiation Hardness in GaN-Based MIS-HEMTs Sungjae Chang PRiME 2020 (ECS Transactions 98), v.98, no.5, pp.519-526	1
Conference	2020	Unmanned Aerial Vehicle Identification Success Probability with LoRa Communication Approach Jinhyung Oh International Symposium on Personal, Indoor and Mobile Radio Communications (PIMRC) 2020, pp.1-6	6
Journal	2019	Origin of the Dry Etch Damage in the Short-channel Oxide Thin-film Transistors for High Resolution Display Application Ji Hun Choi Thin Solid Films, v.674, pp.71-75	7
Journal	2018	Device Characteristics of Top-Emitting Organic Light-Emitting Diodes Depending on Anode Materials for CMOS-Based OLED Microdisplays Hyunkoo Lee IEEE Photonics Journal, v.10, no.6, pp.1-9	33
Journal	2018	Comparison of Trapped Charges and Hysteresis Behavior in hBN Encapsulated Single MoS2 Flake based Field Effect Transistors on SiO2 and hBN Substrates 이창희 Nanotechnology, v.29, no.33, pp.1-8	88
Journal	2018	Investigation of the Evolution of Nitrogen Defects in Flash-Lamp-Annealed InGaZnO Films and Their Effects on Transistor Characteristics 엄태일 Applied Physics Express, v.11, no.6, pp.1-4	12
Journal	2017	The role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn–Sn–O thin-film transistors Chosy Journal of Materials Chemistry C : Materials for Optical and Electronic Devices, v.26, pp.6521-6526	15
Conference	2017	Device Characteristics of Inverted Organic Light-Emitting Diodes Depending on Electron Injection and Transport Materials Hyunkoo Lee International Symposium on Flexible Organic Electronics (ISFOE) 2017, pp.74-74
Journal	2016	Microwave Low-Noise Performance of 0.17 μm Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate Hyung Sup Yoon IEEE Electron Device Letters, v.37, no.11, pp.1407-1410	28
Conference	2016	Temperature Dependence of Current-voltage Characteristics of Packaged AlGaN/GaN HEMT on SiC Substrate Jongmin Lee 한국 반도체 학술 대회 (KCS) 2016, pp.1-2
Journal	2016	Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption 김경아 IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401	5
Journal	2016	Read-Out Modulation Scheme for the Display Driving Circuits Composed of Nonvolatile Ferroelectric Memory and Oxide–Semiconductor Thin-Film Transistors for Low-Power Consumption Byun Chunwon IEEE Transactions on Electron Devices, v.63, no.1, pp.394-401	5
Journal	2015	Flexible Nonvolatile Organic Ferroelectric Memory Transistors Fabricated on Polydimethylsiloxane Elastomer Soon-Won Jung Organic Electronics, v.16, pp.46-53	50
Conference	2014	Device Characteristics of Green and Blue Phosphorescent Organic Light-emitting Diodes with Red Dye Doped Hole Transport Layers Hyunkoo Lee ACS National Meeting and Exposition 2014, pp.1-2
Journal	2014	Device Characteristics of Inkjet-Printed ZnO TFTs by Solution Process Lim Sang Chul Japanese Journal of Applied Physics, v.53, no.5S3, pp.1-5	8
Conference	2014	Power-Aware Remote Display Protocol for Mobile Cloud Eom Bo Yun International Conference on Information Science and Applications (ICISA) 2014, pp.1-3	1
Journal	2013	Understanding the influence of doping in efficient phosphorescent organic light-emitting diodes with an organic p–i–n homojunction Changhun Yun Organic Electronics, v.14, no.7, pp.1695-1703	22
Journal	2012	Dependence of Light-Emitting Characteristics of Blue Phosphorescent Organic Light-Emitting Diodes on Electron Injection and Transport Materials Lee Jeong Ik ETRI Journal, v.34, no.5, pp.690-695	22
Journal	2012	A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation Kim Sang Gi Journal of the Korean Physical Society, v.60, no.10, pp.1552-1556	2
Journal	2011	Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon Sung Min IEEE Transactions on Electron Devices, v.58, no.7, pp.2135-2142	21
Journal	2011	Antimony Selenide Phase-Change Nanowires for Memory Application Soon-Won Jung Journal of Nanoscience and Nanotechnology, v.11, no.2, pp.1569-1572	4
Journal	2009	Improved Performance of White Phosphorescent Organic Light-Emitting Diodes through a Mixed-Host Structure Lee Jonghee ETRI Journal, v.31, no.6, pp.642-646	21
Journal	2009	Stable Efficiency Roll-Off in Blue Phosphorescent Organic Light-Emitting Diodes by Host Layer Engineering Lee Jonghee Organic Electronics, v.10, no.8, pp.1529-1533	101
Conference	2008	Dry Etching Process for the Fabrication of Transparent InGaZnO TFTs Yoon Sung Min International Meeting on Information Display (IMID) 2008, pp.222-225	0
Conference	2008	Device Characteristics of Dual-Gate Pentacene Organic Thin Film Transistor and Inverter Koo Jae Bon International Liquid Crystal Conference (ILCC) 2008, pp.1-1
Journal	2007	Fabrication of Oxide TFTs with Al2O3/ZnO Gate Stacks Patterned Using a Dry Etching Method Yoon Sung Min Electrochemical and Solid-State Letters, v.11, no.2, pp.J15-J18	9
Journal	2007	Device Characteristics of Pentacene Dual-Gate Organic Thin-Film Transistor Koo Jae Bon Japanese Journal of Applied Physics, v.46, no.8A, pp.5062-5066
Journal	2007	Enhancement of Luminance Characteristics in Top-Emission Organic Light Emitting Diode with Cr/Al/Cr Anodes Chung Sung Mook Japanese Journal of Applied Physics, v.46, no.6A, pp.3618-3621	1
Journal	2007	Top Emission Organic Light Emitting Diode with a Cr/Al/Cr Anode Chung Sung Mook Synthetic Metals, v.157, no.8-9, pp.327-331	3
Conference	2006	Influence of T-Gate Shape on the Device Characteristics in SiN-Assisted 0.12um AlGaAs/InGaAs PHEMT Hokyun Ahn International Conference on Solid State Devices and Materials (SSDM) 2006, pp.1-2
Conference	2006	Influence of T-gate shape on the device characteristics in 0.12um AlGaAs/InGaAs PHEMT Hokyun Ahn 한국 반도체 학술 대회 (KCS) 2006, pp.1-2
Conference	2005	Enhancement of luminance Characteristics in Top Emitting OLEDs with the Cr/Al/Cr Anodes Chung Sung Mook International Display Workshops (IDW) 2005, pp.1-4

특허 검색결과
Status	Year	Patent Name	Country	Family Pat.	KIPRIS
Registered	2006	DISTRIBUTED BRAGG REFLECTOR (DBR) STRUCTURE IN VERTICAL CAVITY SURFACE EMITTING LASER (VCSEL) DIODE, METHOD OF MANUFACTURING THE SAME, AND VCSEL DIODE	UNITED STATES

연구보고서 검색결과
Type	Year	Research Project	Primary Investigator	Download
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