Journal
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2024 |
Effect of inductively coupled plasma etch on the interface barrier behavior of (001) β-Ga2O3 Schottky barrier diode
Lee Hun Ki JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.42, no.4, pp.1-10 |
2 |
원문
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Journal
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2020 |
Effects of Recess Depth Under the Gate Area on the V th-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Journal of Nanoscience and Nanotechnology, v.20, no.7, pp.4170-4175 |
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원문
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Conference
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2019 |
Normally-off Field Effect Transistors using fine controlled Recess under Gate Area on AlGaN/GaN Heterostructures
Kim Zin-Sig 대한전자공학회 학술 대회 (추계) 2019, pp.215-218 |
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Journal
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2019 |
Effect of Inductively Coupled Plasma on Multilayer Electrodes for Flexible Single-Layer Touch Screen Panels
Hong Chan-Hwa ACS Applied Materials & Interfaces, v.11, no.28, pp.25495-25499 |
3 |
원문
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Journal
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2018 |
Ultra-low Rate Dry Etching Conditions for Fabricating Normally-off Field Effect Transistors on AlGaN/GaN Heterostructures
Kim Zin-Sig Solid-State Electronics, v.140, pp.12-17 |
9 |
원문
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Journal
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2017 |
Characterization of 0.18-μm Gate Length AlGaN/GaN HEMTs on SiC Fabricated Using Two-Step Gate Recessing
Hyung Sup Yoon Journal of the Korean Physical Society, v.71, no.6, pp.360-364 |
2 |
원문
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Journal
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2017 |
Surface Nanostructuring of CuIn1_xGaxSe2 Films using Argon Plasma Treatment
S P Zimin Semiconductor Science and Technology, v.32, no.7, pp.1-8 |
6 |
원문
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Journal
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2015 |
CCQM pilot study CCQM-P140: quantitative surface analysis of multi-element alloy films
김경중 Metrologia, v.52, no.Technical Suppl., pp.1-28 |
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원문
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Journal
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2015 |
Effect of Inductively Coupled Plasma on the Structural and Electrical Properties of Ti-Doped ITO Films Formed by IPVD
Hong Chan-Hwa Journal of Nanoscience and Nanotechnology, v.15, no.10, pp.8099-8102 |
2 |
원문
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Journal
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2015 |
Fabrication and Electrical Properties of an AlGaN/GaN HEMT on SiC with a Taper-Shaped Backside Via Hole
Min Byoung-Gue Journal of the Korean Physical Society, v.67, no.4, pp.718-722 |
2 |
원문
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Journal
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2015 |
Low Temperature Fabrication of Indium-Tin Oxide Film by Using Ionized Physical Vapor Deposition Method
Cheong Woo-Seok Surface and Coatings Technology, v.266, pp.10-13 |
8 |
원문
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Journal
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2014 |
The Fabrication of an Applicative Device for Trench Width and Depth Using Inductively Coupled Plasma and the Bulk Silicon Etching Process
Woo Jong Chang Transactions on Electrical and Electronic Materials, v.15, no.1, pp.49-54 |
1 |
원문
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Journal
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2013 |
Accurate Quantification of Cu(In,Ga)Se2 Films by AES Depth Profiling Analysis
장종식 Applied Surface Science, v.282, pp.777-781 |
8 |
원문
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Conference
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2013 |
Improvement of C-Si Surface Passivation using Dual Intrinsic A-Si:H Layers for Silicon Heterojunction Solar Cells
Lee Kyu Sung Photovoltaic Specialists Conference (PVSC) 2013, pp.1254-1256 |
0 |
원문
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Journal
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2013 |
The Dry Etching of TiN Thin Films Using Inductively Coupled CF4/Ar Plasma
Woo Jong Chang Transactions on Electrical and Electronic Materials, v.14, no.2, pp.67-70 |
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Conference
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2013 |
Effects of Inductively Coupled Plasma on the Properties of ITO Source/Drain Electrode for ZnO-based Thin-film Transistors
MRS Meeting 2013 (Spring), pp.1-1 |
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Conference
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2013 |
Sub-22 nm Silicon Template Nanofabrication by Advanced Spacer Patterning Technique for NIL Applications
Park Jong-Moon Alternative Lithographic Technologies V (SPIE 8680), pp.1-8 |
0 |
원문
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Journal
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2012 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Cl 2/Ar Inductively Coupled Plasma
김대희 Japanese Journal of Applied Physics, v.51, no.10, pp.1-5 |
3 |
원문
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Conference
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2012 |
Surface passivation for silicon heterojunction solar cells by hodrogenated amorphous silicon using inductively coupled plasma chemical vapor deposition
연창봉 Global Photovoltaic Conference (GPVC) 2012 |
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Conference
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2012 |
Effect of Inductively Coupled Plasma on the Electrical and Optical Properties of Indium Tin Oxide Films Deposited by Ionized Physical Vapor Deposition
Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME) 2012, pp.1-1 |
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Journal
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2012 |
Quantitative Analysis of Cu(In,Ga)Se2 Thin Films by Secondary Ion Mass Spectrometry Using a Total Number Counting Method
장종식 Metrologia, v.49, no.4, pp.522-529 |
12 |
원문
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Journal
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2012 |
Etching Characteristics and Mechanisms of TiO2 Thin Films in HBr/Ar and Cl2/Ar Inductively-Coupled Plasmas
장한별 Plasma Chemistry and Plasma Processing, v.32, no.2, pp.333-342 |
3 |
원문
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Journal
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2011 |
Dual Etch Processes of Via and Metal Paste Filling for Through Silicon Via Process
함용현 Thin Solid Films, v.519, no.20, pp.6727-6731 |
26 |
원문
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Journal
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2011 |
Etching characteristics and mechanism of Ga-doped ZnO thin films in inductively-coupled HBr/X (X = Ar, He, N2, O2) plasmas
함용현 Vacuum, v.85, no.11, pp.1021-1025 |
9 |
원문
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Journal
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2010 |
Surface Characteristics of Parylene-C Films in an Inductively Coupled O2/CF4 Gas Plasma
Ham Yong-Hyun Thin Solid Films, v.518, no.22, pp.6378-6381 |
17 |
원문
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Journal
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2010 |
Etching Characteristics and Mechanism of ZnO and Ga-Doped ZnO Thin Films in Inductively Coupled HBr/Ar/CHF3 Plasma
함용현 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-5 |
5 |
원문
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Journal
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2010 |
Effect of Gas Mixing Ratio on Etch Behavior of Y2O3 Thin Films in Cl2/Ar and BCl3/Ar Inductively Coupled Plasmas
김문근 Japanese Journal of Applied Physics, v.49, no.8 PART 2, pp.1-6 |
5 |
원문
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Conference
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2009 |
Study on the Surface Characteristics of Parylene-C Films in Inductively Coupled O2/CF4 Gas Plasma
Ham Yong-Hyun International Meeting on Information Display (IMID) 2009, pp.1399-1401 |
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Journal
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2009 |
Kinetics of Chemical Changes in Phenol Formaldehyde Based Polymeric Films Etched in N2 O and O2 Inductively Coupled Plasmas: A Comparative Study
권광호 Japanese Journal of Applied Physics, v.48, no.8, pp.1-4 |
2 |
원문
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Journal
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2009 |
Etching Characteristics of VO2 Thin Films Using Inductively Coupled Cl2/Ar Plasma
한용현 Japanese Journal of Applied Physics, v.48, no.8, pp.08HD041-08HD045 |
8 |
원문
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Journal
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2009 |
Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors
Cheong Woo-Seok Journal of the Korean Physical Society, v.54, no.1, pp.473-477 |
1 |
원문
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Journal
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2008 |
Model-Based Analysis of Plasma Parameters and Active Species Kinetics in Cl2/X (X=Ar, He, N2) Inductively Coupled Plasmas
Alexander Efremov Journal of the Electrochemical Society, v.155, no.12, pp.D777-D782 |
72 |
원문
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Journal
|
2008 |
Etching Characteristics of Al2O3 Thin Films in Inductively Coupled BCl3/Ar Plasma
Sun Jin Yun Vacuum, v.82, no.11, pp.1198-1202 |
14 |
원문
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Journal
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2008 |
Model-Based Analysis of the ZrO2 Etching Mechanism in Inductively Coupled BCl3/Ar and BCl3/CHF3/Ar Plasmas
김만수 ETRI Journal, v.30, no.3, pp.383-393 |
10 |
원문
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Journal
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2008 |
Effect of gas mixing ratio on etch behavior of ZrO2 thin films in BCl3∕He inductively coupled plasma
김만수 Journal of Vacuum Science and Technology A, v.26, no.3, pp.344-351 |
14 |
원문
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Conference
|
2006 |
RFID Tag Antenna with a Meandered Dipole and Inductively Coupled Feed
Choi Won Kyu IEEE Antennas and Propagation Society International Symposium 2006, pp.619-622 |
29 |
원문
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Journal
|
2005 |
Design of RFID Tag Antennas using an Inductively Coupled Feed
Son Hae Won Electronics Letters, v.41, no.18, pp.994-996 |
217 |
원문
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